RF Power Bipolar Junction Transistors (BJT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
PTB42003X	NXP Semiconductors	NPN	SINGLE	YES		14 W	.75 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		5 dB	FLAT	RECTANGULAR	1	C BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON		DUAL	R-CDFM-F2		BASE	Not Qualified
RX1214B130Y	NXP Semiconductors	NPN	SINGLE	YES	1200 MHz	280 W	9 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON	15 V	DUAL	R-CDFM-F2		BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS
BLW85	NXP Semiconductors	NPN	SINGLE	NO	650 MHz	105 W	9 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		4.5 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		10	200 Cel		SILICON	16 V	RADIAL	O-CRFM-F4		ISOLATED	Not Qualified
BLV861	NXP Semiconductors	NPN	COMMON EMITTER, 2 ELEMENTS	YES		220 W	15 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		8.5 dB	FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	220 W	30	200 Cel		SILICON	30 V	DUAL	R-CDFM-F4	1	EMITTER	Not Qualified	HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
BLW90	NXP Semiconductors	NPN	SINGLE	NO	900 MHz		.62 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		11 dB	FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT		18.6 W	10	200 Cel		SILICON	30 V	RADIAL	O-CRPM-F4		ISOLATED	Not Qualified	HIGH RELIABILITY
BLV103	NXP Semiconductors	NPN	SINGLE	YES		17 W	1.25 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		11.5 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors	17 W	20	200 Cel	8 pF	SILICON	30 V	DUAL	R-CDFM-F6		ISOLATED	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
RX1214B300Y	NXP Semiconductors	NPN	SINGLE	YES		630 W	21 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON		DUAL	R-CDFM-F2		BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS	NOT SPECIFIED	NOT SPECIFIED
MX0912B250Y	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT				200 Cel		SILICON	20 V	DUAL	R-CDFM-F2		BASE	Not Qualified
PVB42004X	NXP Semiconductors	NPN	SINGLE	YES			1 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	1	C BAND	2	FLANGE MOUNT		18 W		200 Cel		SILICON	15 V	DUAL	R-CDFM-F2		BASE	Not Qualified
MX0912B251Y	NXP Semiconductors	NPN	SINGLE	YES		690 W	15 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON	20 V	DUAL	R-CDFM-F2		BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS	NOT SPECIFIED	NOT SPECIFIED
BFG741TRL	NXP Semiconductors	NPN	SINGLE	YES	7000 MHz		.3 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1		4	SMALL OUTLINE						SILICON	15 V	DUAL	R-PDSO-G4			Not Qualified
RZB06050W	NXP Semiconductors	NPN	SINGLE	YES	540 MHz			CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		7.5 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON	15 V	DUAL	R-CDFM-F2		BASE	Not Qualified
PZ1418B30U	NXP Semiconductors	NPN	SINGLE	YES		45 W	4 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		7.3 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	45 W		200 Cel		SILICON	15 V	DUAL	R-CDFM-F2	NOT APPLICABLE	BASE	Not Qualified		NOT SPECIFIED	NOT SPECIFIED
RZ2731B48W	NXP Semiconductors	NPN	SINGLE	YES			4.2 A	CERAMIC, METAL-SEALED COFIRED			6 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON		DUAL	R-CDFM-F2			Not Qualified
BLX94A	NXP Semiconductors	NPN	SINGLE	NO	750 MHz		2.5 A	PLASTIC/EPOXY	AMPLIFIER		6 dB	FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT			15	200 Cel		SILICON	30 V	RADIAL	O-PRPM-F4		ISOLATED	Not Qualified
934009540114	NXP Semiconductors	NPN	SINGLE	YES			25 A	METAL	AMPLIFIER			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON	20 V	DUAL	R-MDFM-F2		BASE	Not Qualified	WITH EMITTER BALLASTING RESISTORS	NOT SPECIFIED	NOT SPECIFIED
BLW86	NXP Semiconductors	NPN	SINGLE	NO	570 MHz	.105 W	4 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		7.5 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		10	200 Cel		SILICON	36 V	RADIAL	O-CRFM-F4	1	ISOLATED	Not Qualified
BLX14	NXP Semiconductors	NPN	SINGLE	NO	250 MHz		4 A	PLASTIC/EPOXY	AMPLIFIER	1 V	7.5 dB	FLAT	UNSPECIFIED	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT			15	200 Cel	125 pF	SILICON	36 V	UNSPECIFIED	X-PXPM-F4			Not Qualified
BLV98	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		8.5 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT						SILICON		DUAL	R-CDFM-F6			Not Qualified
BLT94	NXP Semiconductors	NPN	SINGLE	YES			2.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE						SILICON	10 V	DUAL	R-CDSO-G8			Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
RZ1214B65YTRAY	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON	15 V	DUAL	R-CDFM-F2		BASE	Not Qualified	WITH EMITTER BALLASTING RESISTORS
MX1011B200Y	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		7.5 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT				200 Cel		SILICON	15 V	DUAL	R-CDFM-F2		BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS
PLB16030U	NXP Semiconductors	NPN	SINGLE	YES			2.6 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT		40 W		200 Cel		SILICON	15 V	DUAL	R-CDFM-F2		BASE	Not Qualified
MX0912B350Y	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT				200 Cel		SILICON	20 V	DUAL	R-CDFM-F2		BASE	Not Qualified
MRF858S	NXP Semiconductors	NPN	SINGLE	YES		20 W		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		11 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLATPACK	Other Transistors	20 W	30	200 Cel	8 pF	SILICON	30 V	DUAL	R-CDFP-F6			Not Qualified	WITH EMITTER BALLASTING RESISTORS
BLV38	NXP Semiconductors	NPN	COMMON EMITTER, 2 ELEMENTS	YES			10 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		8 dB	FLAT	RECTANGULAR	2	VERY HIGH FREQUENCY BAND	5	FLANGE MOUNT		290 W	15	200 Cel		SILICON	40 V	DUAL	R-CDFM-F5		ISOLATED	Not Qualified
MRF13750HS	NXP Semiconductors																														NOT SPECIFIED	NOT SPECIFIED
934016870114	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON	15 V	DUAL	R-CDFM-F2		BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS	NOT SPECIFIED	NOT SPECIFIED
MRB11040W	NXP Semiconductors	NPN	SINGLE	YES			3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		10 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT				200 Cel		SILICON	20 V	DUAL	R-CDFM-F2		BASE	Not Qualified
MZ0912B50YTRAY	NXP Semiconductors	NPN	SINGLE	YES			3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON	20 V	DUAL	R-CDFM-F2		BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS
MRF897R	NXP Semiconductors	NPN	COMMON EMITTER, 2 ELEMENTS	YES		105 W	4 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		10.5 dB	FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	105 W	30	150 Cel	28 pF	SILICON	30 V	DUAL	R-CDFM-F4		EMITTER	Not Qualified	WITH EMITTER BALLASTING RESISTORS
BLF182XR	NXP Semiconductors
LXE15450XTRAY	NXP Semiconductors	NPN	SINGLE	YES			9 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		8 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT		70 W	15	200 Cel		SILICON	25 V	DUAL	R-CDFM-F2		EMITTER	Not Qualified	WITH EMITTER BALLASTING RESISTORS
LV2327E40R	NXP Semiconductors	NPN	SINGLE	YES			2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		7 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT		18 W		200 Cel		SILICON	15 V	DUAL	R-CDFM-F2		EMITTER	Not Qualified
MRB11175Y	NXP Semiconductors	NPN	SINGLE	YES		500 W	12 A	CERAMIC, METAL-SEALED COFIRED			7.5 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON		DUAL	R-CDFM-F2			Not Qualified
BLV935	NXP Semiconductors	NPN	SINGLE	YES		70 W	4 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		9 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors	70 W	30	200 Cel		SILICON	30 V	DUAL	R-CDFM-F6		ISOLATED	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
LXE18300XTRAY	NXP Semiconductors	NPN	SINGLE	YES			.3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		9 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON		DUAL	R-CDFM-F2			Not Qualified
BFQ291	NXP Semiconductors	NPN	SINGLE	YES	400 MHz		.25 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	ROUND	1		4	DISK BUTTON	Other Transistors		15	200 Cel		SILICON		RADIAL	O-CRDB-F4		BASE	Not Qualified	HIGH RELIABILITY
PTB32001X	NXP Semiconductors	NPN	SINGLE	NO		4.2 W	.25 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	ROUND	1	C BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON	15 V	RADIAL	O-CRFM-F2		BASE	Not Qualified	HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
BLS2731-110	NXP Semiconductors	NPN	SINGLE	YES		280 W	12 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		7 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors		40	200 Cel		SILICON		DUAL	R-CDFM-F2		BASE	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS	NOT SPECIFIED	NOT SPECIFIED
BFG741	NXP Semiconductors	NPN	SINGLE WITH BUILT-IN RESISTOR	YES	7000 MHz	2 W	.3 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	SMALL OUTLINE	Other Transistors		60	175 Cel		SILICON	15 V	DUAL	R-PDSO-G4		COLLECTOR	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
MZ0912B50Y	NXP Semiconductors	NPN	SINGLE	YES		150 W	3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON	20 V	DUAL	R-CDFM-F2	NOT APPLICABLE	BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS	NOT SPECIFIED	NOT SPECIFIED
BLS2731-20	NXP Semiconductors	NPN	SINGLE	YES		60 W	3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors		25	200 Cel		SILICON		DUAL	R-CDFM-F2		BASE	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS	NOT SPECIFIED	NOT SPECIFIED
BLP25M710	NXP Semiconductors
PZ2024B10U	NXP Semiconductors	NPN	SINGLE	YES		27 W	2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		5.6 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors	27 W		200 Cel		SILICON	15 V	DUAL	R-CDFM-F2		BASE	Not Qualified
935384108598	NXP Semiconductors
BFQ108	NXP Semiconductors	PNP	SINGLE	YES	4000 MHz		.3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	ROUND	1		4	DISK BUTTON						SILICON	18 V	RADIAL	O-CRDB-F4			Not Qualified
RX2731B90W	NXP Semiconductors	NPN	SINGLE	YES		185 W	8.5 A	CERAMIC, METAL-SEALED COFIRED			6 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON		DUAL	R-CDFM-F2			Not Qualified

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.