NXP Semiconductors - MX1011B200Y

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .3 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 6 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Qualification: Not Qualified; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; No. of Terminals: 6; Transistor Application: AMPLIFIER;

RF Power Bipolar Transistors; Terminal Finish: Gold (Au); Qualification: Qualified; JESD-609 Code: e4;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 540 MHz; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 2.5 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Minimum Power Gain (Gp): 8 dB; Terminal Form: FLAT;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .2 A; No. of Terminals: 2; Terminal Position: RADIAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

RF Power Bipolar Transistors; Moisture Sensitivity Level (MSL): 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3300 MHz; Maximum Power Dissipation (Abs): 31 W; Maximum Collector Current (IC): 2.25 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 27 V; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): 4 A; Package Style (Meter): POST/STUD MOUNT;

RF Power Bipolar Transistors; Qualification: Qualified; Terminal Finish: Gold (Au); JESD-609 Code: e4;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 4 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 15;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 1.65 A; Transistor Element Material: SILICON; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Maximum Power Dissipation Ambient: 2 W; Qualification: Not Qualified;