RF Power Bipolar Junction Transistors (BJT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
MSC81010	STMicroelectronics	NPN	SINGLE	NO		29 W	1 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	L BAND	2	POST/STUD MOUNT	Other Transistors		15	200 Cel	10 pF	SILICON			RADIAL	O-CRPM-F2	BASE	Not Qualified
AM82223-010	STMicroelectronics	NPN	SINGLE	YES		28 W	1.2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	6.5 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors		20	200 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified
SD8250	STMicroelectronics	NPN	SINGLE	YES		575 W	20 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors		10	250 Cel		SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD4017	STMicroelectronics	NPN	SINGLE	YES		88 W	.06 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON	25 V		DUAL	R-PDFM-F6		Not Qualified	HIGH RELIABILITY
AM82731-006	STMicroelectronics	NPN	SINGLE	YES		40 W	1.8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	5.6 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors		10	200 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1730(TH560)	STMicroelectronics	NPN	SINGLE	YES		320 W	16 A	PLASTIC/EPOXY			FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON	35 V		RADIAL	O-PRFM-F4		Not Qualified	HIGH RELIABILITY
SD1898	STMicroelectronics	NPN	SINGLE	YES		87.5 W	7.8 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON	15 V		DUAL	S-PDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
MSC83303	STMicroelectronics	NPN	SINGLE	NO		10 W	.54 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	S BAND	2	FLANGE MOUNT	Other Transistors		30	200 Cel	5 pF	SILICON			RADIAL	O-CRFM-F2	BASE	Not Qualified
AM80912-015	STMicroelectronics	NPN	SINGLE	YES		50 W	1.8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	8.1 dB	FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	250 Cel		SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified
TSD4575	STMicroelectronics	NPN	SINGLE	YES			.2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2		Not Qualified	HIGH RELIABILITY
SD4590	STMicroelectronics	NPN	COMMON EMITTER, 2 ELEMENTS	YES		300 W	25 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		25	200 Cel		SILICON	28 V	NICKEL	DUAL	R-PDFM-F4	EMITTER	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS
AM81214-006	STMicroelectronics	NPN	SINGLE	YES		16.7 W	.82 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
2N3733	STMicroelectronics	NPN	SINGLE	NO		23 W	1 A						1				Other Transistors		10	175 Cel
MSC81400M	STMicroelectronics	NPN	SINGLE	YES		1000 W	28 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified
AM83135-030	STMicroelectronics	NPN	SINGLE	YES		133 W	6 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	5.5 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors		30	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
AM2931-125	STMicroelectronics	NPN	SINGLE	YES		500 W	16 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors		30	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1456	STMicroelectronics	NPN	SINGLE	YES		150 W	16 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	8	FLANGE MOUNT	Other Transistors		20	200 Cel		SILICON	33 V	NICKEL	DUAL	R-PDFM-F8		Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR
AM0912-300	STMicroelectronics	NPN	SINGLE	YES		940 W	24 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		10	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified
AM2729-125	STMicroelectronics	NPN	SINGLE	YES		500 W	16 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors		30	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1224-10	STMicroelectronics	NPN	SINGLE	NO		80 W	4.5 A	PLASTIC/EPOXY			FLAT	ROUND	1		4	FLANGE MOUNT	Other Transistors		10	200 Cel	65 pF	SILICON	36 V		RADIAL	O-PRFM-F4		Not Qualified	HIGH RELIABILITY
AM82731-050	STMicroelectronics	NPN	SINGLE	YES		167 W	8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	6 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors		30	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1135-03	STMicroelectronics	NPN	SINGLE	YES		15 W	1.7 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	DISK BUTTON	Other Transistors		20	200 Cel		SILICON	16 V		RADIAL	O-PRDB-F4		Not Qualified
AM1517-025S	STMicroelectronics	NPN	SINGLE	YES			2.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT						SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified
MSC80197	STMicroelectronics	NPN	SINGLE	NO	3200 MHz		.7 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	200 Cel	7 pF	SILICON	20 V		RADIAL	O-CRFM-F2	EMITTER	Not Qualified
MSC81020	STMicroelectronics	NPN	SINGLE	NO		35 W	1.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	L BAND	2	POST/STUD MOUNT	Other Transistors		15	200 Cel	19 pF	SILICON			RADIAL	O-CRPM-F2	BASE	Not Qualified
SD1448	STMicroelectronics	NPN	SINGLE	NO		31.8 W	.85 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors		10	200 Cel	20 pF	SILICON	25 V		RADIAL	O-PRPM-F4		Not Qualified	HIGH EFFICIENCY
SD1894	STMicroelectronics	NPN	SINGLE	YES		9.2 W	.375 A	PLASTIC/EPOXY	AMPLIFIER	10 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	12.5 W	15	200 Cel		SILICON			DUAL	R-PDFM-F2	BASE	Not Qualified
SD1728	STMicroelectronics	NPN	SINGLE	YES		330 W	40 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		15	200 Cel	360 pF	SILICON	55 V		RADIAL	O-PRFM-F4		Not Qualified			NOT SPECIFIED	NOT SPECIFIED
SD4600	STMicroelectronics	NPN	SINGLE	YES		146 W	8 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		25	200 Cel		SILICON	28 V	NICKEL	DUAL	R-PDFM-F4	EMITTER	Not Qualified	HIGH RELIABILITY
AM1214-250	STMicroelectronics	NPN	SINGLE	YES		786 W	21 A	METAL	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	BIP RF Small Signal		10	250 Cel		SILICON			DUAL	R-MDFM-F2	BASE	Not Qualified
AM2931-110	STMicroelectronics	NPN	SINGLE	YES		375 W	12 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	6.2 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors		30	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1489	STMicroelectronics	NPN	SINGLE	YES		175 W	8 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		10	200 Cel		SILICON	30 V		DUAL	R-PDFM-F4	EMITTER	Not Qualified	WITH EMITTER BALLASTING RESISTORS
SD1398	STMicroelectronics	NPN	SINGLE	YES		53 W	2.4 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors		20	200 Cel	8.5 pF	SILICON	24 V	NICKEL	DUAL	R-PDFM-F6		Not Qualified	HIGH RELIABILITY
SD1538-08	STMicroelectronics	NPN	SINGLE	YES		583 W	11 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors		5	200 Cel		SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified
SD1135	STMicroelectronics	NPN	SINGLE	NO	470 MHz	15 W	2 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors		20	175 Cel		SILICON	16 V		RADIAL	O-PRPM-F4		Not Qualified
AM80814-025	STMicroelectronics	NPN	SINGLE	YES		75 W	3.5 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
MSC1004M	STMicroelectronics	NPN	SINGLE	NO		18 W	.65 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	L BAND	2	FLANGE MOUNT	Other Transistors		30	200 Cel		SILICON			RADIAL	O-PRFM-F2	BASE	Not Qualified	HIGH RELIABILITY
AM80912-030	STMicroelectronics	NPN	SINGLE	YES		75 W	3.5 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	7.8 dB	FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	250 Cel		SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1433	STMicroelectronics	NPN	SINGLE	NO		58 W	2.5 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors		10	175 Cel		SILICON	16 V	GOLD	RADIAL	O-PRPM-F4		Not Qualified		e4
SD4701	STMicroelectronics	NPN	SINGLE	YES		145 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON	30 V		DUAL	R-PDFM-F3		Not Qualified	HIGH RELIABILITY
AM80912-005	STMicroelectronics	NPN	SINGLE	YES		25 W	.9 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	9.3 dB	FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors		30	250 Cel		SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified
SD1456(TCC3100)	STMicroelectronics	NPN		YES			16 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR		VERY HIGH FREQUENCY BAND	8	FLANGE MOUNT				200 Cel		SILICON	33 V		DUAL	R-PDFM-F8		Not Qualified	WITH EMITTER BALLASTING RESISTORS
AM83135-040	STMicroelectronics	NPN	SINGLE	YES		167 W	8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	5.1 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors		30	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
MSC82307	STMicroelectronics	NPN	SINGLE	NO		21.4 W	1.2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	S BAND	2	FLANGE MOUNT	Other Transistors		30	200 Cel	8.5 pF	SILICON			RADIAL	O-CRFM-F2	BASE	Not Qualified
SD1423	STMicroelectronics	NPN	SINGLE	YES		29 W	2.5 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors		20	200 Cel	24 pF	SILICON	25 V	NICKEL	DUAL	R-PDFM-F6		Not Qualified	HIGH RELIABILITY
SD1459	STMicroelectronics	NPN	SINGLE	NO		150 W	16 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors		20	200 Cel	150 pF	SILICON	30 V		RADIAL	O-PRPM-F4		Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR
SD1463	STMicroelectronics	NPN	SINGLE	YES			15 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	FLANGE MOUNT						SILICON	30 V		DUAL	R-PDFM-F8		Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR
SD1728C	STMicroelectronics	NPN	SINGLE	YES			40 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT				200 Cel	360 pF	SILICON	55 V		RADIAL	O-PRFM-F4		Not Qualified

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.