Current Regulator Diodes

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Technology	No. of Elements	Nominal Regulation Current (Ireg)	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Knee Impedance	Maximum Operating Temperature	Maximum Limiting Voltage	Minimum Operating Temperature	Terminal Finish	Minimum Dynamic Impedance	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Reference Standard
CL40M45	Diotec Semiconductor Ag	CURRENT REGULATOR DIODE				YES				FIELD EFFECT		40 mA		Current Regulator Diodes	90 V			3 V								1 W				NOT SPECIFIED	NOT SPECIFIED	SILICON
CL40M45-AQ	Diotec Semiconductor Ag	CURRENT REGULATOR DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	FIELD EFFECT	1	40 mA	SMALL OUTLINE		90 V		150 Cel	3 V	-50 Cel			R-PDSO-C2				1 W		DO-214AA		NOT SPECIFIED	NOT SPECIFIED	SILICON	AEC-Q101
SST510	Vishay Intertechnology	CURRENT REGULATOR DIODE				YES						2.9 mA		Current Regulator Diodes	50 V			3.9 V								.36 W						SILICON
JANTX1N5306UR-1	Microchip Technology	CURRENT REGULATOR DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	FIELD EFFECT	1	2.2 mA	LONG FORM				175 Cel	1.95 V	-65 Cel	TIN LEAD		O-LELF-R2	1	ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-213AB	e0			SILICON	MIL-19500
1N5297UR-1/TR	Microsemi	CURRENT REGULATOR DIODE
1N5297	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	1 mA	LONG FORM		100 V	205000 ohm	175 Cel	1.35 V	-55 Cel	TIN LEAD		O-XALF-W2		ISOLATED	Not Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0			SILICON
JAN1N5306UR-1	Microchip Technology	CURRENT REGULATOR DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	FIELD EFFECT	1	2.2 mA	LONG FORM				175 Cel	1.95 V	-65 Cel	TIN LEAD		O-LELF-R2	1	ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-213AB	e0			SILICON	MIL-19500
1N5306	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	2.2 mA	LONG FORM		100 V	52000 ohm	175 Cel	1.95 V	-55 Cel	TIN LEAD		O-XALF-W2		ISOLATED	Not Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0			SILICON
CMJ1000TRPBFREE	Central Semiconductor	CURRENT REGULATOR DIODE				YES						1.1 mA		Current Regulator Diodes	100 V			1.7 V		TIN BISMUTH	650000 ohm		1			.5 W			e6	10	260	SILICON
SST510(SOT-23)	Micross Components	CURRENT REGULATOR DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	FIELD EFFECT	1	3.6 mA	SMALL OUTLINE			40000 ohm	135 Cel	3.9 V	-55 Cel		80000 ohm	R-PDSO-G3				.35 W						SILICON
SST510-E3	Vishay Siliconix	CURRENT REGULATOR DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	FIELD EFFECT	1	3.6 mA	SMALL OUTLINE					3.9 V		MATTE TIN		R-PDSO-G3			Not Qualified	.35 W		TO-236AB	e3			SILICON
SST510-T1	Vishay Siliconix	CURRENT REGULATOR DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	FIELD EFFECT	1	3.6 mA	SMALL OUTLINE					3.9 V				R-PDSO-G3			Not Qualified	.35 W		TO-236AB				SILICON
SST510T1	Calogic	CURRENT REGULATOR DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	FIELD EFFECT	1	3.6 mA	SMALL OUTLINE		50 V	70000 ohm	150 Cel	3.9 V	-55 Cel			R-PDSO-G3			Not Qualified	.36 W				NOT SPECIFIED	NOT SPECIFIED	SILICON
J505	Vishay Intertechnology	CURRENT REGULATOR DIODE	BOTTOM	WIRE	2	NO	ROUND	PLASTIC/EPOXY	SINGLE	FIELD EFFECT	1	1 mA	CYLINDRICAL	Current Regulator Diodes	50 V			2.1 V		Tin/Lead (Sn/Pb)	500000 ohm	O-PBCY-W2				.35 W			e0			SILICON
J505-TO-92	Linear Integrated Systems	CURRENT REGULATOR DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	SINGLE	FIELD EFFECT	1	1 mA	CYLINDRICAL				135 Cel	.9 V	-55 Cel	MATTE TIN		O-PBCY-T2	1		Not Qualified				e3			SILICON
J505-TO-92-2L	Linear Integrated Systems	CURRENT REGULATOR DIODE				NO						1 mA		Current Regulator Diodes	50 V			2.1 V		MATTE TIN	500000 ohm					.35 W			e3			SILICON
JAN1N5297-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	1 mA	LONG FORM					1.35 V		TIN LEAD		O-XALF-W2		ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0			SILICON	MIL-19500/463
1N5314-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM					2.9 V		TIN LEAD		O-XALF-W2		ISOLATED	Not Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0			SILICON
1N5314-1E3/TR	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM		100 V	12000 ohm	175 Cel	2.9 V	-65 Cel	Matte Tin (Sn)	235000 ohm	O-LALF-W2		ISOLATED		.5 W	HIGH SOURCE IMPEDANCE	DO-7	e3			SILICON
JAN1N5314-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM					2.9 V		TIN LEAD		O-XALF-W2		ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0			SILICON	MIL-19500/463
JANTX1N5314-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM					2.9 V		TIN LEAD		O-XALF-W2		ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0			SILICON	MIL-19500/463
JANTXV1N5314-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM					2.9 V		TIN LEAD		O-XALF-W2		ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0			SILICON	MIL-19500/463
1N5314	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM		100 V	12000 ohm	175 Cel	2.9 V	-55 Cel	TIN LEAD		O-XALF-W2		ISOLATED	Not Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0			SILICON
1N5314TR	Central Semiconductor	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM				200 Cel	2.9 V	-65 Cel	TIN LEAD		O-LALF-W2		ISOLATED	Not Qualified	.6 W	HIGH RELIABILITY	DO-35	e0			SILICON
1N5314UR-1	Microchip Technology	CURRENT REGULATOR DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM				175 Cel	2.9 V	-65 Cel	TIN LEAD		O-LELF-R2	1	ISOLATED	Not Qualified	.5 W	METALLURGICALLY BONDED	DO-213AB	e0			SILICON
CMJH150TRPBFREE	Central Semiconductor	CURRENT REGULATOR DIODE				YES						15 mA		Current Regulator Diodes	50 V			4.3 V		TIN BISMUTH	30000 ohm		1			.5 W			e6	10	260	SILICON
J509-LF	Calogic	CURRENT REGULATOR DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	SINGLE	FIELD EFFECT	1	3 mA	CYLINDRICAL				150 Cel	3.5 V	-55 Cel			O-PBCY-T2				.36 W		TO-92				SILICON
JAN1N5297UR-1	Microchip Technology	CURRENT REGULATOR DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	FIELD EFFECT	1	1 mA	LONG FORM				175 Cel	1.35 V	-65 Cel	TIN LEAD		O-LELF-R2	1	ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-213AB	e0			SILICON	MIL-19500
S-822T	Semitec	CURRENT REGULATOR DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	FIELD EFFECT	1	8.2 mA	SMALL OUTLINE	Current Regulator Diodes	50 V		150 Cel	6.56 V	-40 Cel			R-PDSO-F2				.5 W						SILICON
1N5306TR	Central Semiconductor	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	FIELD EFFECT	1	2.2 mA	LONG FORM				200 Cel	1.95 V	-65 Cel	TIN LEAD		O-LALF-W2		ISOLATED	Not Qualified	.6 W	HIGH RELIABILITY	DO-35	e0			SILICON
1N5306UR-1	Microchip Technology	CURRENT REGULATOR DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	FIELD EFFECT	1	2.2 mA	LONG FORM	Current Regulator Diodes	100 V		175 Cel	1.95 V	-65 Cel	TIN LEAD	370000 ohm	O-LELF-R2	1	ISOLATED	Not Qualified	.5 W	METALLURGICALLY BONDED	DO-213AB	e0			SILICON
J500-TO-92-2L	Linear Integrated Systems	CURRENT REGULATOR DIODE				NO						.24 mA		Current Regulator Diodes	50 V			1.2 V		MATTE TIN	4000000 ohm					.35 W			e3			SILICON
JANS1N5306-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	2.2 mA	LONG FORM					1.95 V		TIN LEAD		O-XALF-W2		ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0			SILICON	MIL-19500/463
1N5297-1E3	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	FIELD EFFECT	1	1 mA	LONG FORM	Current Regulator Diodes	100 V		175 Cel	1.35 V	-65 Cel	MATTE TIN	800000 ohm	O-LALF-W2		ISOLATED		.5 W	METALLURGICALLY BONDED, HIGH SOURCE IMPEDANCE	DO-7	e3			SILICON
1N5297TR	Central Semiconductor	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	FIELD EFFECT	1	1 mA	LONG FORM				200 Cel	1.35 V	-65 Cel	TIN LEAD		O-LALF-W2		ISOLATED	Not Qualified	.6 W	HIGH RELIABILITY	DO-35	e0			SILICON
CL40M35-AQ	Diotec Semiconductor Ag	CURRENT REGULATOR DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	FIELD EFFECT	1	40 mA	SMALL OUTLINE		90 V		150 Cel	3 V	-50 Cel			R-PDSO-C2				1 W		DO-214AC		NOT SPECIFIED	NOT SPECIFIED	SILICON	AEC-Q101
JANTX1N5297-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	1 mA	LONG FORM				175 Cel	1.35 V	-65 Cel	TIN LEAD		O-XALF-W2		ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0			SILICON	MIL-19500/463
JANTXV1N5297-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	1 mA	LONG FORM					1.35 V		TIN LEAD		O-XALF-W2		ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0			SILICON	MIL-19500/463
JANTXV1N5297UR-1/TR	Microsemi	CURRENT REGULATOR DIODE

Current regulator diodes, also known as constant current diodes, are electronic components used to regulate the current flowing through a circuit. They are designed to provide a constant current independent of the voltage applied to the circuit.

Current regulator diodes work by maintaining a constant voltage drop across the diode, which in turn maintains a constant current through the circuit. The voltage drop is determined by the internal structure of the diode, which is typically made up of a P-N junction and a resistor.

Current regulator diodes are commonly used in electronic circuits that require a constant current, such as LED drivers, voltage regulators, and battery chargers. They offer several advantages over other types of current regulation, such as simplicity, low cost, and high reliability.

Current regulator diodes come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.