Part | RoHS | Manufacturer | Trigger Device Type | Package Style (Meter) | Surface Mount | Terminal Position | Configuration | Package Body Material | Minimum Breakdown Voltage | Terminal Form | Package Shape | No. of Elements | Repetitive Peak Reverse Voltage | No. of Terminals | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Qualification | JEDEC-95 Code | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Breakdown Voltage |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
SHOCKLEY DIODE |
CYLINDRICAL |
NO |
BOTTOM |
SINGLE |
PLASTIC/EPOXY |
124 V |
THROUGH-HOLE |
ROUND |
1 |
3 |
Silicon Surge Protectors |
125 Cel |
-25 Cel |
O-PBCY-T3 |
1 |
Not Qualified |
TO-92 |
70 A |
138 V |
|||||
Renesas Electronics |
SHOCKLEY DIODE |
CYLINDRICAL |
NO |
BOTTOM |
SINGLE |
PLASTIC/EPOXY |
134 V |
THROUGH-HOLE |
ROUND |
1 |
3 |
Silicon Surge Protectors |
125 Cel |
-25 Cel |
O-PBCY-T3 |
1 |
Not Qualified |
TO-92 |
70 A |
146 V |
|||||
Renesas Electronics |
SHOCKLEY DIODE |
CYLINDRICAL |
NO |
BOTTOM |
SINGLE |
PLASTIC/EPOXY |
96 V |
THROUGH-HOLE |
ROUND |
1 |
3 |
Silicon Surge Protectors |
125 Cel |
-25 Cel |
O-PBCY-T3 |
1 |
Not Qualified |
TO-92 |
70 A |
115 V |
|||||
Renesas Electronics |
SHOCKLEY DIODE |
CYLINDRICAL |
NO |
BOTTOM |
SINGLE |
PLASTIC/EPOXY |
142 V |
THROUGH-HOLE |
ROUND |
1 |
3 |
Silicon Surge Protectors |
125 Cel |
-25 Cel |
O-PBCY-T3 |
1 |
Not Qualified |
TO-92 |
70 A |
152 V |
|||||
Renesas Electronics |
SHOCKLEY DIODE |
CYLINDRICAL |
NO |
BOTTOM |
SINGLE |
PLASTIC/EPOXY |
96 V |
THROUGH-HOLE |
ROUND |
1 |
80 V |
3 |
Silicon Surge Protectors |
125 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
TO-92 |
70 A |
e0 |
152 V |
|||
Renesas Electronics |
SHOCKLEY DIODE |
CYLINDRICAL |
NO |
BOTTOM |
SINGLE |
PLASTIC/EPOXY |
111 V |
THROUGH-HOLE |
ROUND |
1 |
3 |
Silicon Surge Protectors |
125 Cel |
-25 Cel |
O-PBCY-T3 |
1 |
Not Qualified |
TO-92 |
70 A |
128 V |
Non-gated digital switches are electronic devices used in digital circuits to control the flow of current without the need for a gate input signal. They are commonly used in applications such as data processing, signal routing, and power management.
Non-gated digital switches can be implemented using various semiconductor technologies, such as MOSFETs (metal-oxide-semiconductor field-effect transistors), CMOS (complementary metal-oxide-semiconductor) switches, and bipolar junction transistors (BJTs). The basic principle of operation involves controlling the state of the switch using a bias voltage or current, without the need for an external gate signal.
In digital circuits, non-gated digital switches are often used as electronic switches to control the routing of digital signals. They can also be used as power switches to control the flow of power in high-power applications such as motor control and power management.
Non-gated digital switches are often designed to operate at high frequencies and can be used in circuits that require high-speed switching. They are typically designed to operate with low power consumption and are often used in battery-operated devices.