Flash Memory

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
EPCS4SI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	3.3		3.3	8	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	512KX8	512K	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified				4194304 bit	2.7 V			e4	20	260		.00005 Amp
S25FL128SAGNFI001	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3	30	260	NOR TYPE	.0001 Amp	8 mm			3
XCF04SVOG20C	Xilinx	CONFIGURATION MEMORY		20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		10 mA	4194304 words	3.3		1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories	20	.65 mm	85 Cel		4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE	R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles	33 MHz	4.4 mm	Not Qualified				4194304 bit	3 V			e3	30	260	NOR TYPE	.01 Amp	6.5024 mm			3.3
S29AL016J70TFI020	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
W25Q64JVSSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		18 mA	8388608 words	3.3			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		67108864 bit	3 V	2.7V TO 3V @ 104MHZ		e3	30	260	NOR TYPE	.00005 Amp	5.28 mm			3.3
S29AL016J70TFI010	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
AT45DB321E-SHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		85 MHz	5.24 mm					33554432 bit	2.3 V			e4		260			5.29 mm			3
S25FL256SAGNFI001	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3	30	260	NOR TYPE	.0001 Amp	8 mm			3
S25FL128SAGMFI001	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.41	2	Flash Memories	20	1.27 mm	85 Cel	3-STATE	32MX4	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI		134217728 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3	30	260	NOR TYPE	.0001 Amp	10.3 mm			3
AT25DF321A-SH-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI		33554432 bit	2.7 V			e4		260	NOR TYPE	.00001 Amp	5.29 mm			2.7
S25FL128SAGMFIR01	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI		134217728 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3	30	260	NOR TYPE	.0001 Amp	10.3 mm			3
S25FL256SAGNFI000	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3	30	260	NOR TYPE	.0001 Amp	8 mm			3
EPCS16SI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3.3		3.3	8	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	2MX8	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified				16777216 bit	2.7 V			e4	20	260		.00005 Amp
SST26VF032B-104I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm	Not Qualified		SPI		33554432 bit	2.7 V			e3		260	NOR TYPE	.000045 Amp	5.26 mm			3
S25FL128SAGNFI000	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		134217728 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3	30	260	NOR TYPE	.0001 Amp	8 mm			3
W25Q128JVSIQTR	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.23 mm					134217728 bit	2.7 V	IT ALSO OPERATES AT 104MHZ CLOCK FREQ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		5.23 mm			3
MTFC8GAKAJCN-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words		NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm					68719476736 bit	2.7 V			e1	30	260	MLC NAND TYPE		13 mm				NO
W25Q128JVSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3.3			8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	5.28 mm			3.3
AT45DB321E-SHF-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		85 MHz	5.24 mm					33554432 bit	2.3 V			e4					5.29 mm			3
SST26VF064B-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		67108864 bit	2.7 V			e3	40	260	NOR TYPE	.000045 Amp	5.26 mm			3
AT45DB321D-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI		33554432 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 528 BYTES EACH		e3	40	260	NOR TYPE	.00001 Amp	5.29 mm			2.7
JS28F128P33TF70A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3,3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	MATTE TIN		DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			TOP	134217728 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e3			NOR TYPE	.002 Amp	18.4 mm	YES	70 ns	3	NO
AT25DF321A-SH-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI		33554432 bit	2.7 V			e4			NOR TYPE	.00001 Amp	5.29 mm			2.7
W25Q64JVSSIQTR	Winbond Electronics	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		18 mA	8388608 words	3.3			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		67108864 bit	3 V	2.7V TO 3V @ 104MHZ		e3	30	260	NOR TYPE	.00005 Amp	5.28 mm			3.3
W25Q32JVSSIQTR	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN		DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm					33554432 bit	2.7 V			e3		260	NOR TYPE		5.28 mm			3
S29AL008J70TFI020	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	12 mA	524288 words	3	YES	3,3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	20	.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MT25QL128ABA1ESE-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.285 mm					134217728 bit	2.7 V				30	260			5.285 mm			3
W25Q32JVSSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3.3			8	SMALL OUTLINE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN		DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm					33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ		e3		260			5.28 mm			3
EPCS64SI16N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	8388608 words	3.3		3.3	8	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	8MX8	8M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G16	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified				67108864 bit	2.7 V			e4				.0001 Amp
S29AL016J70TFI023	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29JL064J70TFI000	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM/TOP	67108864 bit	2.7 V	TOP BOOT BLOCK, BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MT25QU02GCBB8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		2GX1	2G	-40 Cel					BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					2147483648 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
SST25VF016B-50-4I-S2AF	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	16777216 words			3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	1	SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified		SPI		16777216 bit	2.7 V			e4		260	NOR TYPE	.00002 Amp	5.275 mm
S25FL256SAGNFI003	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3	30	260	NOR TYPE	.0001 Amp	8 mm			3
S25FL128SAGNFI003	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3	30	260	NOR TYPE	.0001 Amp	8 mm			3
SST26VF064BT-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		67108864 bit	2.7 V			e3	40	260	NOR TYPE	.000045 Amp	5.26 mm			3
W25Q128JVSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3.3			8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	5.28 mm			3.3
SST25VF016B-50-4I-S2AF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		30 mA	16777216 words			3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	1	SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified		SPI		16777216 bit	2.7 V			e4		260	NOR TYPE	.00002 Amp	5.275 mm
S25FL064LABMFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	8388608 words	3			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm			SPI		67108864 bit	2.7 V			e3		260	NOR TYPE	.00002 Amp	5.28 mm			3
AT45DB081E-SSHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	1048576 words	3		1.8/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE		e4		260	NOR TYPE	.00004 Amp	4.925 mm			3
M25P16-VMN6P	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified	15 ms	SPI		16777216 bit	2.7 V			e4			NOR TYPE	.00001 Amp	4.9 mm			2.7
SST26VF016B-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		16777216 bit	2.7 V			e3		260	NOR TYPE	.000025 Amp	4.9 mm			3
AT45DB641E-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	2.3			1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		85 MHz	5.24 mm					67108864 bit	1.7 V			e4					5.29 mm			1.8
AT45DB161E-SHD-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		26 mA	16777216 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI		16777216 bit	2.5 V			e4			NOR TYPE	.00001 Amp	5.29 mm			2.7
W25Q64JVSSIQT	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words	3.3			8	SMALL OUTLINE		1			1.27 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			S-PDSO-G8	3	3.6 V	2.16 mm		133 MHz	5.28 mm					67108864 bit	3 V	ALSO OPERATES WITH 2.7V-3V SUPPLY AT 104MHZ		e3	30	260			5.28 mm			2.7
W25Q16JVSNIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3.3			8	SMALL OUTLINE		1			1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm					16777216 bit	3 V	ALSO IT OPERATES AT 2.7V TO 3V WITH 104 MHZ			NOT SPECIFIED	NOT SPECIFIED			4.85 mm			3
S29AL008J70TFI010	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	12 mA	524288 words	3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MT25QL128ABA1ESE-0SITTR	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE		1			1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.285 mm					134217728 bit	2.7 V				30	260			5.285 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.