Microwave Mixer & Detector Diodes

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Maximum Impedance	Frequency Band	Maximum Output Current	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Schottky Barrier Type	Maximum Operating Temperature	Application	Maximum Pulsed Input Power	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Additional Features	No. of Phases	Minimum Tangential Signal Sensitivity	JEDEC-95 Code	Minimum Breakdown Voltage	Maximum Non Repetitive Peak Forward Current	JESD-609 Code	Minimum Operating Frequency	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Maximum Operating Frequency	Reference Standard
BAS70-04FILM	STMicroelectronics	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		ULTRA HIGH FREQUENCY	.07 A	.41 V	2 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	70 V		150 Cel			-55 Cel	MATTE TIN	R-PDSO-G3	1		Not Qualified	.2 W						1 A	e3		30	260	SILICON
BA89202VH6127XTSA1	Infineon Technologies	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY			1.4 pF			1		SMALL OUTLINE				125 Cel			-55 Cel		R-PDSO-F2													NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
DB3J316F0L	Panasonic	MIXER DIODE	DUAL	FLAT	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		VERY HIGH FREQUENCY	.1 A	.55 V		SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	30 V		85 Cel			-40 Cel		R-PDSO-F3										1 A			NOT SPECIFIED	NOT SPECIFIED	SILICON
MMBD701LT1G	Onsemi	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY			1 pF	SCHOTTKY		1		SMALL OUTLINE	Other Diodes			125 Cel			-55 Cel	MATTE TIN	R-PDSO-G3	1		Not Qualified	.2 W				TO-236AB			e3		30	260	SILICON
SMS7630-079LF	Skyworks Solutions	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		X BAND	.05 A	.24 V	.3 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	1 V	ZERO BARRIER	150 Cel				MATTE TIN	R-PDSO-F2	1		Not Qualified	.075 W	LOW NOISE						e3		40	260	SILICON
1SS390SMT2R	ROHM	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		HIGH FREQUENCY	.1 A		1.2 pF		.01 uA	1		SMALL OUTLINE				150 Cel				TIN	R-PDSO-F2					HIGH RELIABILITY						e3				SILICON
BAS70-05FILM	STMicroelectronics	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		ULTRA HIGH FREQUENCY	.07 A	.41 V	2 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	70 V		150 Cel			-55 Cel	MATTE TIN	R-PDSO-G3	1		Not Qualified	.2 W						1 A	e3			260	SILICON
HSMS-2822-TR1G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		C BAND		.34 V	1 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes			150 Cel				NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified	.25 W							e4		20	260	SILICON
HSMS-2812-TR1G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS				.41 V	2 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	20 V		150 Cel				NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified								e4		20	260	SILICON
MMSD301T1G	Onsemi	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.2 A	.6 V	1.5 pF	SCHOTTKY	.2 uA	1	25 V	SMALL OUTLINE		30 V		125 Cel	EFFICIENCY		-55 Cel	MATTE TIN	R-PDSO-G2	1		Not Qualified	.225 W		1			30 V		e3		30	260	SILICON		AEC-Q101
BAT6302VH6327XTSA1	Infineon Technologies	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE					.85 pF	SCHOTTKY		1		SMALL OUTLINE			LOW BARRIER	150 Cel				MATTE TIN	R-PDSO-F2	1			.1 W	HIGH SPEED						e3				SILICON
BAT1503WE6327HTSA1	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		X BAND			.35 pF	SCHOTTKY		1		SMALL OUTLINE			LOW BARRIER	150 Cel				MATTE TIN	R-PDSO-G2	1			.1 W	LOW NOISE						e3				SILICON
MMBD301LT1G	Onsemi	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY			1.5 pF	SCHOTTKY		1		SMALL OUTLINE	Other Diodes			125 Cel			-55 Cel	MATTE TIN	R-PDSO-G3	1		Not Qualified	.2 W				TO-236			e3		30	260	SILICON
HSMS-2802-TR1G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			1 A	1 V	2 pF	SCHOTTKY	.2 uA	2	50 V	SMALL OUTLINE	Rectifier Diodes	70 V		150 Cel				NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified						70 V		e4		20	260	SILICON
HSMS-2825-TR1G	Broadcom	MIXER DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		C BAND		.34 V	.2 pF	SCHOTTKY	.1 uA	2	1 V	SMALL OUTLINE	Other Diodes			150 Cel			-65 Cel	NICKEL PALLADIUM GOLD	R-PDSO-G4	1	CATHODE	Not Qualified	.25 W							e4		20	260	SILICON
MMSD701T1G	Onsemi	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1 V	1 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	70 V		125 Cel			-55 Cel	MATTE TIN	R-PDSO-G2	1		Not Qualified	.225 W							e3		30	260	SILICON
HSMS-2812-BLKG	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS				.41 V	2 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	20 V		150 Cel				NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified								e4		20	260	SILICON
BAT1504WH6327XTSA1	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		X BAND			.35 pF	SCHOTTKY		2		SMALL OUTLINE			LOW BARRIER	150 Cel				TIN	R-PDSO-G3	1			.1 W	LOW NOISE						e3				SILICON
MMBD352WT1G	Onsemi	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		ULTRA HIGH FREQUENCY			1 pF	SCHOTTKY		2		SMALL OUTLINE	Microwave Mixer Diodes			150 Cel			-55 Cel	MATTE TIN	R-PDSO-G3	1		Not Qualified	.2 W							e3		30	260	SILICON
HSMS-2820-TR1G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		C BAND		.34 V	1 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes			150 Cel				NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified	.25 W							e4		20	260	SILICON
HSMS-2850-TR1G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		L BAND				SCHOTTKY		1		SMALL OUTLINE	Other Diodes		ZERO BARRIER	150 Cel			-65 Cel	NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified								e4	.915 GHz	20	260	SILICON	4 GHz
HSMS-2812	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.001 A	.41 V	1.2 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	20 V		150 Cel		.25 W		TIN	R-PDSO-G3	1		Not Qualified							1 A	e3				SILICON
BAS70-06FILM	STMicroelectronics	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS		ULTRA HIGH FREQUENCY	.07 A	.41 V	2 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	70 V		150 Cel			-55 Cel	MATTE TIN	R-PDSO-G3	1		Not Qualified	.2 W						1 A	e3		30	235	SILICON
SMS7621-005LF	Skyworks Solutions	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		X BAND	.05 A	.32 V	.25 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	2 V	LOW BARRIER	150 Cel				Matte Tin (Sn)	R-PDSO-G3	1		Not Qualified	.075 W	LOW NOISE						e3		40	260	SILICON
1PS70SB84,115	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		ULTRA HIGH FREQUENCY		.7 V		SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	15 V		125 Cel				TIN	R-PDSO-G3	1		Not Qualified								e3		30	260	SILICON
SMMSD301T1G	Onsemi	MIXER DIODE				YES			SINGLE			.2 A	.45 V		SCHOTTKY		1			Rectifier Diodes	30 V		125 Cel				MATTE TIN		1										e3		30	260	SILICON
BAT62-03W	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY			.6 pF	SCHOTTKY		1		SMALL OUTLINE	Other Diodes		LOW BARRIER	150 Cel				MATTE TIN	R-PDSO-G2	1		Not Qualified	.1 W							e3				SILICON
MMBD301LT3G	Onsemi	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		.45 V	1.5 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	30 V		125 Cel			-55 Cel	MATTE TIN	R-PDSO-G3	1		Not Qualified	.2 W				TO-236			e3		30	260	SILICON
HSMS-2812-TR1	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY					.41 V		SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	20 V		150 Cel				TIN LEAD	R-PDSO-G3			Not Qualified								e0				SILICON
HSMS-2822-BLKG	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		C BAND		.34 V	1 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes			150 Cel				NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified								e4		20	260	SILICON
HSMS-2800-TR1G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				.41 V	2 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	70 V		150 Cel				NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified								e4		20	260	SILICON
HSMS-2852-TR1G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		L BAND				SCHOTTKY		2		SMALL OUTLINE	Other Diodes		ZERO BARRIER	150 Cel			-65 Cel	NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified								e4	.915 GHz	20	260	SILICON	4 GHz
HSMS-2822-TR1	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY				1 A	.34 V		SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	15 V		150 Cel				TIN LEAD	R-PDSO-G3			Not Qualified								e0				SILICON
BAT15099E6327HTSA1	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		X BAND			.35 pF	SCHOTTKY		2		SMALL OUTLINE			LOW BARRIER	150 Cel				TIN	R-PDSO-G4	1	CATHODE		.1 W	LOW NOISE						e3				SILICON
BAT6203WE6327HTSA1	Infineon Technologies	MIXER DIODE													SCHOTTKY																												SILICON
DB2J31400L	Panasonic	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		L BAND	.03 A	.4 V				1		SMALL OUTLINE	Rectifier Diodes	30 V		125 Cel					R-PDSO-F2													NOT SPECIFIED	NOT SPECIFIED	SILICON
HSMS-8202-TR1G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	150 ohm	KU BAND			.26 pF	SCHOTTKY		2		SMALL OUTLINE	Microwave Mixer Diodes			150 Cel				NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified								e4	10 GHz	20	260	SILICON	14 GHz
HSMS-286C-TR1G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		C BAND				SCHOTTKY		2		SMALL OUTLINE	Other Diodes			150 Cel				MATTE TIN	R-PDSO-G3	1		Not Qualified								e3	.915 GHz	20	260	SILICON	5.8 GHz
SMS7621-092	Skyworks Solutions	MIXER DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	COMMON BIPOLAR TERMINAL, 2 ELEMENTS		K BAND	.05 A	.32 V		SCHOTTKY		2		CHIP CARRIER			LOW BARRIER	150 Cel			-65 Cel		R-XBCC-N4				.075 W					2 V				NOT SPECIFIED	NOT SPECIFIED	SILICON
HSMS-2850-BLKG	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		L BAND				SCHOTTKY		1		SMALL OUTLINE	Other Diodes		ZERO BARRIER	150 Cel				NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified								e4	.915 GHz	20	260	SILICON	4 GHz
HSMS-2810-TR1G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				.41 V	2 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	20 V		150 Cel				NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified								e4		20	260	SILICON
HSMS-2822	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.01 A	.34 V	1 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	8 V		150 Cel		.25 W		TIN	R-PDSO-G3	1		Not Qualified							1 A	e3				SILICON
SMS7630-006LF	Skyworks Solutions	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		X BAND	.05 A	.24 V	.3 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	1 V	ZERO BARRIER	150 Cel				Matte Tin (Sn)	R-PDSO-G3	1		Not Qualified	.075 W	LOW NOISE						e3		40	260	SILICON
1PS88SB82,115	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS		ULTRA HIGH FREQUENCY		.34 V		SCHOTTKY	.2 uA	3	1 V	SMALL OUTLINE	Other Diodes	15 V		125 Cel			-65 Cel	TIN	R-PDSO-G6	1		Not Qualified								e3		30	260	SILICON
HSMS-2850	Broadcom	MIXER DIODE				YES														Other Diodes			150 Cel			-65 Cel									55 dBm					.915 GHz	40	260		5.8 GHz
BAT6804WH6327XTSA1	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1 pF	SCHOTTKY		2		SMALL OUTLINE				150 Cel				TIN	R-PDSO-G3	1			.15 W							e3				SILICON
MBD301	Onsemi	MIXER DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1.5 pF	SCHOTTKY		1		CYLINDRICAL	Other Diodes			125 Cel				TIN LEAD	O-PBCY-T2			Not Qualified	.28 W				TO-92			e0			235	SILICON
BAT1704WH6327XTSA1	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			.75 pF	SCHOTTKY		2		SMALL OUTLINE				125 Cel			-55 Cel	TIN	R-PDSO-G3	1			.15 W							e3				SILICON

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84