Other Function Memory ICs

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
EPCQ4ASI8N	Intel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	524288 words	3			8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G8	3	3.6 V	1.75 mm	100 MHz	3.9 mm		4194304 bit	2.7 V	e3	30	260	NOR TYPE	.00005 Amp	4.9 mm
DS2401P/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND		ASYNCHRONOUS		64 words	5		3/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6	1	6 V	1.5 mm		3.76 mm	Not Qualified	64 bit	2.8 V	e0					3.94 mm
DS2401P+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND		ASYNCHRONOUS		64 words	5		3/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	6 V	1.5 mm		3.76 mm	Not Qualified	64 bit	2.8 V	e3	30	260			3.94 mm
EPCQ128ASI16N	Intel	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3			8	SMALL OUTLINE	SOP16,.4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G16	3	3.6 V	2.65 mm	100 MHz	7.5 mm		134217728 bit	2.7 V	e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	10.3 mm
CY15B102Q-SXET	Infineon Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		SYNCHRONOUS	5 mA	262144 words	3.3		2.5/3.3	8	SMALL OUTLINE	SOP8,.3	SRAMs		1.27 mm	125 Cel		256KX8	256K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	2.03 mm		5.23 mm	Not Qualified	2097152 bit	2 V			260		.00075 Amp	5.28 mm
DS2401P	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND		ASYNCHRONOUS		64 words	5		3/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-C6	1	6 V	1.5 mm		3.76 mm	Not Qualified	64 bit	2.8 V	e0	20	240			3.94 mm
DS2401P+	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND		ASYNCHRONOUS		64 words	5		3/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	6 V	1.5 mm		3.76 mm	Not Qualified	64 bit	2.8 V	e3	30	260			3.94 mm
DS2502P-E48/TR	Dallas Semiconductor
7230	Intel	MEMORY CIRCUIT		22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE									IN-LINE				2.54 mm							DUAL		R-PDIP-T22			5.08 mm		10.16 mm	Not Qualified				NOT SPECIFIED	NOT SPECIFIED			27.3685 mm
DS2401Z/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words	5		3/5	1	SMALL OUTLINE	SOT-223	Other Memory ICs		2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4	1	6 V	1.8 mm		3.5 mm	Not Qualified	64 bit	2.8 V	e0					6.5 mm
DS2401Z+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words	5		3/5	1	SMALL OUTLINE	SOT-223	Other Memory ICs		2.3 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G4	1	6 V	1.8 mm		3.5 mm	Not Qualified	64 bit	2.8 V	e3	30	260			6.5 mm
CY15B102Q-SXE	Infineon Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		SYNCHRONOUS	5 mA	262144 words	3.3		2.5/3.3	8	SMALL OUTLINE	SOP8,.3	SRAMs		1.27 mm	125 Cel		256KX8	256K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	2.03 mm		5.23 mm	Not Qualified	2097152 bit	2 V		30	260		.00075 Amp	5.28 mm
DS2401Z	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words	5		3/5	1	SMALL OUTLINE	SOT-223	Other Memory ICs		2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4	1	6 V	1.8 mm		3.5 mm	Not Qualified	64 bit	2.8 V	e0	20	240			6.5 mm
DS2401Z+	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words	5		3/5	1	SMALL OUTLINE	SOT-223	Other Memory ICs		2.3 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G4	1	6 V	1.8 mm		3.5 mm	Not Qualified	64 bit	2.8 V	e3	30	260			6.5 mm
DS2411R/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS	.1 mA	64 words			2/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	Other Memory ICs		.95 mm	85 Cel		64X1	64	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G3	1	5.25 V	1.12 mm		1.3 mm	Not Qualified	64 bit	1.5 V	e0	20	240		.000001 Amp	2.92 mm
DS2411R/TR	Dallas Semiconductor		INDUSTRIAL	3			PLASTIC/EPOXY	YES							.1 mA				2/5			TO-236	Other Memory ICs			85 Cel				-40 Cel										Not Qualified							.000001 Amp
DS2411R+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS	.1 mA	64 words			2/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	Other Memory ICs		.95 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G3	1	5.25 V	1.12 mm		1.3 mm	Not Qualified	64 bit	1.5 V	e3	30	260		.000001 Amp	2.92 mm
EPCQ64ASI16N	Intel	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	8388608 words	3			8	SMALL OUTLINE	SOP16,.4		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G16	3	3.6 V	2.65 mm	100 MHz	7.5 mm		67108864 bit	2.7 V	e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	10.3 mm
MR2A16ACYS35	Freescale Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		262144 words	3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	85 Cel		256KX16	256K	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e3	40	260		.028 Amp	18.41 mm	35 ns
ST25DV04K-IER6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		4KX1	4K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm		3 mm		4096 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED			4.4 mm
ST25DV64K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		65536 words	3.3			1	SMALL OUTLINE				1.27 mm	85 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED			4.9 mm
M24SR64-YDW6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		8KX8	8K	-40 Cel		DUAL		R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		65536 bit	2.7 V						4.4 mm
DS2401	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS		64 words	5		3/5	1	CYLINDRICAL	SIP3,.1,50	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		O-PBCY-T3		6 V				Not Qualified	64 bit	2.8 V	e0	20	240
DS2401+	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS		64 words	5		3/5	1	CYLINDRICAL		Other Memory ICs			85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	BOTTOM		O-PBCY-T3	1	6 V				Not Qualified	64 bit	2.8 V	e3	30	250
DS1996L-F5	Maxim Integrated	MEMORY CIRCUIT	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		65536 words			3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs			70 Cel		64KX1	64K	-40 Cel		END		O-MEDB-N2		6 V				Not Qualified	65536 bit	2.8 V		NOT SPECIFIED	NOT SPECIFIED				15000 ns
DS1996L-F5+	Analog Devices	MEMORY CIRCUIT	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		8192 words			3/5	8	DISK BUTTON	BUTTON,.68IN	SRAMs			70 Cel		8KX8	8K	-40 Cel		END		O-MEDB-N2		6 V				Not Qualified	65536 bit	2.8 V		NOT SPECIFIED	NOT SPECIFIED
47L16-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V	e3	40	260			4.9 mm	400 ns
47L16-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		16384 bit	2.7 V	e3	40	260			4.4 mm	400 ns
ST25DV16K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		16384 words	3.3			1	SMALL OUTLINE				1.27 mm	85 Cel		16KX1	16K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED			4.9 mm
DS2401/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS		64 words	5		3/5	1	CYLINDRICAL	SIP3,.1,50	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	BOTTOM		O-PBCY-T3		6 V				Not Qualified	64 bit	2.8 V	e0
DS2401+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS		64 words	5		3/5	1	CYLINDRICAL		Other Memory ICs			85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	BOTTOM		O-PBCY-T3		6 V				Not Qualified	64 bit	2.8 V	e3		250
DS2411R+U	Analog Devices	MEMORY CIRCUIT																													Matte Tin (Sn) - annealed				1								e3	30	260
ST25DV64K-IER6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		65536 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm		3 mm		65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED			4.4 mm
DS2401A+	Analog Devices	MEMORY CIRCUIT
DS2401AP+	Analog Devices	MEMORY CIRCUIT
DS2401AZ+	Analog Devices	MEMORY CIRCUIT																																										NOT SPECIFIED	NOT SPECIFIED
STM32F103ZGH6JTR	STMicroelectronics	MEMORY CIRCUIT																																										NOT SPECIFIED	NOT SPECIFIED
MR25H10CDFR	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS	27 mA	131072 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified	1048576 bit	2.7 V	e3	30	260		.000115 Amp	6 mm
MB85RS256BPNF-G-JNE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	6 mA	32768 words	3.3		3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm		3.9 mm	Not Qualified	262144 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	5.05 mm
ST25DV04K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE				1.27 mm	85 Cel		4KX1	4K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		4096 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED			4.9 mm
MR2A16AVYS35	NXP Semiconductors	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE				.8 mm	105 Cel		256KX16	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V						18.41 mm
M24SR64-YMN6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		65536 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			4.9 mm
DS1996L-F5+A13	Analog Devices	MEMORY CIRCUIT
ST25DV16K-IER6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		16384 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		16KX1	16K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm		3 mm		16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED			4.4 mm
47L16-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V	e3	40	260			4.9 mm	400 ns
47L16T-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		16384 bit	2.7 V	e3	40	260			4.4 mm	400 ns
MR0A16ACYS35	Freescale Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS	165 mA	262144 words	3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	85 Cel		256KX16	256K	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e3	40	260		.028 Amp	18.41 mm	35 ns
DS2401P+T&R-C01	Analog Devices	MEMORY CIRCUIT