RF Power Bipolar Junction Transistors (BJT)

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
AM1517-025M	STMicroelectronics	NPN	SINGLE	YES			2.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT						SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified
MSC81325M	STMicroelectronics	NPN	SINGLE	NO		880 W	24 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON			RADIAL	O-CRFM-F2	BASE	Not Qualified	HIGH RELIABILITY
AM1011-500	STMicroelectronics	NPN	SINGLE	YES		1360 W	27 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		10	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1477	STMicroelectronics	NPN	SINGLE	YES			20 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	6	FLANGE MOUNT	BIP RF Small Signal			200 Cel		SILICON	18 V		UNSPECIFIED	O-PXFM-F6	EMITTER	Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR		NOT SPECIFIED	NOT SPECIFIED
AM1011-075	STMicroelectronics	NPN	SINGLE	YES		175 W	5.4 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	9.2 dB	FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors		10	250 Cel		SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
MX1011B700YTRAY	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON	15 V		DUAL	R-CDFM-F2	BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS
PZB16035U	NXP Semiconductors	NPN	SINGLE	YES			4 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT		45 W		200 Cel		SILICON	15 V		DUAL	R-CDFM-F2	BASE	Not Qualified
BLT94-T	NXP Semiconductors	NPN	SINGLE	YES			2.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE						SILICON	10 V		DUAL	R-CDSO-G8		Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
BLW898	NXP Semiconductors	NPN	SINGLE	YES		44 W	3.7 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors		30	200 Cel		SILICON	28 V		DUAL	R-CDFM-F6		Not Qualified	HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
935360898178	NXP Semiconductors																														40	260
MX1011B700Y	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	6 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT				200 Cel		SILICON	15 V		DUAL	R-CDFM-F2	BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS
933994050114	NXP Semiconductors	NPN	SINGLE	YES			6 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON	20 V		DUAL	R-CDFM-F2	BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS		NOT SPECIFIED	NOT SPECIFIED
LXE16350X	NXP Semiconductors	NPN	SINGLE	YES			6 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	9 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT		57 W	15	200 Cel		SILICON	20 V		DUAL	R-CDFM-F2	EMITTER	Not Qualified
934045770114	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS		NOT SPECIFIED	NOT SPECIFIED
934045780114	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS		NOT SPECIFIED	NOT SPECIFIED
BLV904	NXP Semiconductors	NPN	SINGLE	YES			1.2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	11 dB	GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE		14 W	30	200 Cel		SILICON	28 V		DUAL	R-CDSO-G8	ISOLATED	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
PXB16050UTRAY	NXP Semiconductors	NPN	SINGLE	YES			6 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8.5 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT		67 W		200 Cel		SILICON	15 V		DUAL	R-CDFM-F2	BASE	Not Qualified
BLW31	NXP Semiconductors	NPN	SINGLE	YES	700 MHz		6 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	9 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	DISK BUTTON			10	200 Cel		SILICON	18 V		RADIAL	O-CRDB-F4		Not Qualified
BLV958	NXP Semiconductors	NPN	SINGLE	YES		250 W	15 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8.5 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	2	FLANGE MOUNT	Other Transistors	145 W	30	200 Cel		SILICON	30 V		DUAL	R-CDFM-F2	EMITTER	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
BLW34	NXP Semiconductors	NPN	SINGLE	NO	3300 MHz	31 W	2.25 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	9 dB	FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors	31 W	20	200 Cel		SILICON	30 V		RADIAL	O-CRPM-F4		Not Qualified	HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
MZ0921B50Y	NXP Semiconductors	NPN	SINGLE	YES			3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT				200 Cel		SILICON	20 V		DUAL	R-CDFM-F2	BASE	Not Qualified
BLV909-T	NXP Semiconductors	NPN	SINGLE	YES			1.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	9 dB	GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE		29 W	30	200 Cel		SILICON	30 V		DUAL	R-CDSO-G8	ISOLATED	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
BLV95	NXP Semiconductors	NPN	SINGLE	YES			5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	5.5 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT			15	200 Cel		SILICON	16 V		DUAL	R-CDFM-F6	ISOLATED	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
RX3034B70W	NXP Semiconductors	NPN	SINGLE	YES		185 W	8.5 A	CERAMIC, METAL-SEALED COFIRED		5.4 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON			DUAL	R-CDFM-F2		Not Qualified
BLS2731-110TRAY	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
MSB11900Y	NXP Semiconductors	NPN	SINGLE	YES		1000 W	50 A	CERAMIC, METAL-SEALED COFIRED		7 dB	FLAT	RECTANGULAR	1	L BAND	4	FLANGE MOUNT	Other Transistors			200 Cel		SILICON			DUAL	R-CDFM-F4		Not Qualified
RZ2731B60W	NXP Semiconductors	NPN	SINGLE	YES		125 W	5.7 A	CERAMIC, METAL-SEALED COFIRED		6 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON			DUAL	R-CDFM-F2		Not Qualified
933783040114	NXP Semiconductors	NPN	SINGLE	YES			3 A	METAL	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON	15 V		DUAL	R-MDFM-F2	BASE	Not Qualified	WITH EMITTER BALLASTING RESISTORS		NOT SPECIFIED	NOT SPECIFIED
933448540112	NXP Semiconductors	NPN	SINGLE	NO	3400 MHz		1.25 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT						SILICON	30 V		RADIAL	O-CRPM-F4		Not Qualified	HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS		NOT SPECIFIED	NOT SPECIFIED
RN2731B110W	NXP Semiconductors	NPN	SINGLE	YES		280 W	12 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON	25 V		DUAL	R-CDFM-F2	BASE	Not Qualified
RX1214B170Y	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED		6.7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2		Not Qualified
BLV904TRAY	NXP Semiconductors	NPN	SINGLE	YES			1.2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	11 dB	GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE		14 W	30	200 Cel		SILICON	28 V		DUAL	R-CDSO-G8	ISOLATED	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
PLB16004U	NXP Semiconductors	NPN	SINGLE	YES		9 W	.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8.5 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	9 W	15	200 Cel		SILICON	15 V		DUAL	R-CDFM-F2	BASE	Not Qualified
BLU15/12	NXP Semiconductors	NPN	SINGLE	NO			3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	7.8 dB	FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT		35 W	15	200 Cel		SILICON	16 V		RADIAL	O-CRPM-F4	ISOLATED	Not Qualified
BLT94T/R	NXP Semiconductors	NPN	SINGLE	YES			2.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE						SILICON	10 V		DUAL	R-CDSO-G8		Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
BFQ234/1	NXP Semiconductors	NPN	SINGLE	NO				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1		4	POST/STUD MOUNT						SILICON			RADIAL	O-CRPM-F4		Not Qualified
BLW60C	NXP Semiconductors	NPN	SINGLE	NO	600 MHz		9 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	5 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT			10	200 Cel	160 pF	SILICON	16 V		RADIAL	O-CRPM-F4	ISOLATED	Not Qualified
BLV945B	NXP Semiconductors	NPN	COMMON EMITTER, 2 ELEMENTS	YES			2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8.5 dB	FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT		60 W	30	200 Cel	30 pF	SILICON	27 V		DUAL	R-CDFM-F4	EMITTER	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
MZ0912B100YTRAY	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON	20 V		DUAL	R-CDFM-F2	BASE	Not Qualified	WITH EMITTER BALLASTING RESISTORS
BLV958FL-T	NXP Semiconductors	NPN	SINGLE	YES			15 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8.5 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	2	FLATPACK		145 W	30	200 Cel		SILICON	30 V		DUAL	R-CDFP-F2	EMITTER	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
MX0912B251YTRAY	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON	20 V		DUAL	R-CDFM-F2	BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS
934055198114	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS		NOT SPECIFIED	NOT SPECIFIED
TPV8100B	NXP Semiconductors	NPN	COMMON EMITTER, 2 ELEMENTS	YES			12 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8.5 dB	FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	215 W	30	200 Cel		SILICON			DUAL	R-CDFM-F4	EMITTER	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR
BLV97CE	NXP Semiconductors	NPN	SINGLE	YES			3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	7 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT			15	200 Cel		SILICON	27 V		DUAL	R-CDFM-F6	ISOLATED	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
BLU86	NXP Semiconductors	NPN	SINGLE	YES			.2 A	PLASTIC/EPOXY	AMPLIFIER	7 dB	GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	SMALL OUTLINE		2 W	25	175 Cel	2.6 pF	SILICON	16 V	TIN	DUAL	R-PDSO-G4	COLLECTOR	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS	e3
BLV2347	NXP Semiconductors	NPN	SINGLE	YES		250 W	10 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	2	FLANGE MOUNT	Other Transistors		45	200 Cel		SILICON	27 V		DUAL	R-CDFM-F2	EMITTER	Not Qualified	HIGH RELIABILITY
BFG591TRL	NXP Semiconductors	NPN	SINGLE	YES	8000 MHz		.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE						SILICON	15 V	TIN	DUAL	R-PDSO-G4		Not Qualified		e3
BLS3135-10TRAY	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.