NXP Semiconductors - 934016870114

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 25 A; Maximum Collector-Emitter Voltage: 20 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 16 A; JESD-30 Code: O-PRPM-F4;

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Case Connection: BASE; Additional Features: DIFFUSED EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.2 W; Maximum Collector Current (IC): .25 A; Additional Features: HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.4 A; JESD-30 Code: R-CDFM-F2; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 850 MHz; Maximum Collector Current (IC): .32 A; Minimum Power Gain (Gp): 12 dB;

RF Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .3 A; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .25 A; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; No. of Terminals: 6; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1400 MHz; Maximum Collector Current (IC): .7 A; Package Style (Meter): CYLINDRICAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16.7 W; Maximum Collector Current (IC): .82 A; Qualification: Not Qualified;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR; Terminal Form: FLAT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F2;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 5 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; No. of Elements: 1;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-CDFM-F4; JESD-609 Code: e3;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Terminal Position: DUAL; No. of Terminals: 10;