RF Power Bipolar Junction Transistors (BJT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
MRB11350Y	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED		7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2			Not Qualified
LX1214E500X	NXP Semiconductors	NPN	SINGLE	YES			9 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT		70 W	15	200 Cel		SILICON	25 V		DUAL	R-CDFM-F2		EMITTER	Not Qualified
933783030114	NXP Semiconductors	NPN	SINGLE	YES			21 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2		BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS		NOT SPECIFIED	NOT SPECIFIED
BLU56T/R	NXP Semiconductors	NPN	SINGLE	YES			.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	SMALL OUTLINE					3 pF	SILICON	16 V	TIN	DUAL	R-PDSO-G4		COLLECTOR	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS	e3
BLV21	NXP Semiconductors	NPN	SINGLE	NO	650 MHz	36 W	1.75 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	10 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		10	200 Cel		SILICON	36 V		RADIAL	O-CRFM-F4		ISOLATED	Not Qualified
PTB23001X	NXP Semiconductors	NPN	SINGLE WITH BUILT-IN RESISTOR	NO		4.2 W	.25 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	C BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON	15 V		RADIAL	O-CRFM-F2		BASE	Not Qualified	HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
MZ0912B100Y	NXP Semiconductors	NPN	SINGLE	YES		290 W	6 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON	20 V		DUAL	R-CDFM-F2	NOT APPLICABLE	BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS		NOT SPECIFIED	NOT SPECIFIED
BFQ136	NXP Semiconductors	NPN	SINGLE	NO	4000 MHz	9 W	.6 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors	9 W	25	200 Cel		SILICON	18 V		RADIAL	O-CRPM-F4		ISOLATED	Not Qualified
934055678114	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2		BASE	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS		NOT SPECIFIED	NOT SPECIFIED
BLV94	NXP Semiconductors	NPN	SINGLE	YES			3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	6 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT			15	200 Cel		SILICON	16 V		DUAL	R-CDFM-F6		ISOLATED	Not Qualified
LAE4001R	NXP Semiconductors	NPN	SINGLE	YES			.08 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	S BAND	4	MICROWAVE						SILICON	16 V		RADIAL	O-CRMW-F4		EMITTER	Not Qualified	HIGH RELIABILITY
MZ0912B50Y,114	NXP Semiconductors	NPN	SINGLE	YES			3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT				200 Cel		SILICON	20 V		DUAL	R-CDFM-F2		BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS
BLV2042T/R	NXP Semiconductors	NPN	SINGLE	YES			1.2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8 dB	GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE		12 W	30	200 Cel		SILICON	28 V		DUAL	R-CDSO-G8		ISOLATED	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
LXE18400X	NXP Semiconductors	NPN	SINGLE	YES		70 W	9 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	70 W	15	200 Cel		SILICON	25 V		DUAL	R-CDFM-F2		EMITTER	Not Qualified	WITH EMITTER BALLASTING RESISTORS
BLW29	NXP Semiconductors	NPN	SINGLE	NO	825 MHz		2.75 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	10 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT			10	200 Cel		SILICON	18 V		RADIAL	O-CRPM-F4		ISOLATED	Not Qualified
BFQ268/1	NXP Semiconductors	NPN	SINGLE	NO				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1		4	POST/STUD MOUNT						SILICON			RADIAL	O-CRPM-F4			Not Qualified
BLV904-T	NXP Semiconductors	NPN	SINGLE	YES			1.2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	11 dB	GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE		14 W	30	200 Cel		SILICON	28 V		DUAL	R-CDSO-G8		ISOLATED	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
BLS2731-20,114	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2		BASE	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
RZ3135B50W	NXP Semiconductors	NPN	SINGLE	YES		125 W	5.7 A	CERAMIC, METAL-SEALED COFIRED		5.2 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON			DUAL	R-CDFM-F2			Not Qualified
RZ1214B35Y	NXP Semiconductors	NPN	SINGLE	YES		125 W	3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON	15 V		DUAL	R-CDFM-F2		BASE	Not Qualified	DIFFUSED EMITTER BALLASTING RESISTORS
BLW99	NXP Semiconductors		SINGLE	NO				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1		4	FLANGE MOUNT		154 W		200 Cel		SILICON			RADIAL	O-CRFM-F4		ISOLATED	Not Qualified
BLV99	NXP Semiconductors	NPN	SINGLE	NO				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT						SILICON			RADIAL	O-CRPM-F4			Not Qualified
BLY94	NXP Semiconductors	NPN	SINGLE	NO	500 MHz		6 A	PLASTIC/EPOXY	AMPLIFIER	7 dB	FLAT	UNSPECIFIED	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT			10	200 Cel	130 pF	SILICON	36 V		UNSPECIFIED	X-PXPM-F4		ISOLATED	Not Qualified
LWE2015R	NXP Semiconductors	NPN	SINGLE	YES			.45 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	7.5 dB	FLAT	ROUND	1	S BAND	2	DISK BUTTON		6 W		200 Cel		SILICON	16 V		RADIAL	O-CRDB-F2		EMITTER	Not Qualified
BLY90	NXP Semiconductors	NPN	SINGLE	YES			8 A	PLASTIC/EPOXY	AMPLIFIER	5 dB	FLAT	SQUARE	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT				200 Cel		SILICON	18 V		DUAL	S-PDPM-F4		ISOLATED	Not Qualified
BLW60	NXP Semiconductors	NPN	SINGLE	NO			8 A	PLASTIC/EPOXY	AMPLIFIER	5 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT						SILICON	18 V		RADIAL	O-PRPM-F4		ISOLATED	Not Qualified
PTC4001T	NXP Semiconductors	NPN	SINGLE WITH BUILT-IN RESISTOR	NO			.25 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	C BAND	2	FLANGE MOUNT						SILICON	16 V		RADIAL	O-CRFM-F2		COLLECTOR	Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR
BLV59	NXP Semiconductors	NPN	SINGLE	YES		70 W	3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	7 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON	27 V		DUAL	R-CDFM-F6		ISOLATED	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
BLY88C	NXP Semiconductors	NPN	SINGLE	NO	800 MHz		3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT			10	200 Cel		SILICON	18 V		RADIAL	O-CRPM-F4		ISOLATED	Not Qualified
BLX13	NXP Semiconductors	NPN	SINGLE	YES	500 MHz			METAL	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	DISK BUTTON			10		65 pF	SILICON	36 V		RADIAL	O-MRDB-F4			Not Qualified
BLW50F	NXP Semiconductors	NPN	SINGLE	NO	540 MHz	94 W	2.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	94 W	15	200 Cel		SILICON	55 V		RADIAL	O-CRFM-F4		ISOLATED	Not Qualified
RO2731B10W	NXP Semiconductors	NPN	SINGLE	YES		35 W	1.4 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON	25 V		DUAL	R-CDFM-F2		BASE	Not Qualified
MZ0912B350Y	NXP Semiconductors		SINGLE	YES				CERAMIC, METAL-SEALED COFIRED			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2			Not Qualified
PZB16050U	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8.5 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2			Not Qualified
MRF9100LR3	NXP Semiconductors																															NOT SPECIFIED	NOT SPECIFIED
BFG741TRL13	NXP Semiconductors	NPN	SINGLE	YES	7000 MHz		.3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE						SILICON	15 V		DUAL	R-PDSO-G4			Not Qualified
BLY91C/01	NXP Semiconductors	NPN	SINGLE	YES	500 MHz		.75 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	12 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	DISK BUTTON			5	200 Cel	15 pF	SILICON	36 V		RADIAL	O-CRDB-F4			Not Qualified
RZ1214B35U	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED		8 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2			Not Qualified
BLV100	NXP Semiconductors	NPN	SINGLE	YES			2.25 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT			20	200 Cel		SILICON	30 V		DUAL	R-CDFM-F6		ISOLATED	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
934054887114	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON	20 V		DUAL	R-CDFM-F2		BASE	Not Qualified	WITH EMITTER BALLASTING RESISTORS		NOT SPECIFIED	NOT SPECIFIED
BLY89C	NXP Semiconductors	NPN	SINGLE	NO	750 MHz		6 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	6 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT			10	200 Cel	90 pF	SILICON	18 V		RADIAL	O-CRPM-F4		ISOLATED	Not Qualified
BLX39	NXP Semiconductors	NPN	SINGLE	YES	570 MHz		4 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	7.5 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	DISK BUTTON			10	200 Cel		SILICON	36 V		RADIAL	O-CRDB-F4			Not Qualified
PTB32003X	NXP Semiconductors	NPN	SINGLE	NO		7.6 W	.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8 dB	FLAT	ROUND	1	C BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON	15 V		RADIAL	O-CRFM-F2		BASE	Not Qualified	HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
BFQ741	NXP Semiconductors	NPN	SINGLE WITH BUILT-IN RESISTOR	YES	7000 MHz	4 W	.3 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	DISK BUTTON	Other Transistors		120	200 Cel		SILICON	19 V		RADIAL	O-CRDB-F4		EMITTER	Not Qualified	WITH EMITTER BALLASTING RESISTORS
MZ0912B250Y	NXP Semiconductors		SINGLE	YES				CERAMIC, METAL-SEALED COFIRED			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2			Not Qualified
PQC5001T	NXP Semiconductors	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		4 W	.25 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	C BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON	16 V		DUAL	R-CDFM-F2		COLLECTOR	Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR
BLV947	NXP Semiconductors	NPN	COMMON EMITTER, 2 ELEMENTS	YES			1.65 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT		200 W	30	200 Cel		SILICON	28 V		DUAL	R-CDFM-F4		EMITTER	Not Qualified
PZ2327B15U	NXP Semiconductors	NPN	SINGLE	YES		32 W	2.1 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	7 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors	32 W		200 Cel		SILICON	15 V		DUAL	R-CDFM-F2		BASE	Not Qualified

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.