Gated Digital Switches
| Part | RoHS | Manufacturer | Trigger Device Type | Package Style (Meter) | Surface Mount | Terminal Position | Configuration | Case Connection | Maximum On-state Voltage | Package Body Material | Nominal Holding Current | Minimum Breakdown Voltage | Maximum Switching Voltage | Terminal Form | Package Shape | No. of Elements | Minimum Switching Voltage | No. of Terminals | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Qualification | Maximum Holding Current | JEDEC-95 Code | JESD-609 Code | Maximum Breakdown Voltage |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
SILICON BILATERAL SWITCH |
CYLINDRICAL |
NO |
BOTTOM |
SINGLE |
1.7 V |
PLASTIC/EPOXY |
.7 mA |
6 V |
10 V |
THROUGH-HOLE |
ROUND |
1 |
6 V |
3 |
Gated Switches |
125 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
1.5 mA |
TO-226AA |
e0 |
10 V |
|||
|
Onsemi |
SILICON BILATERAL SWITCH |
CYLINDRICAL |
NO |
BOTTOM |
SINGLE |
PLASTIC/EPOXY |
.2 mA |
7.5 V |
9 V |
THROUGH-HOLE |
ROUND |
1 |
7.5 V |
3 |
Gated Switches |
125 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.5 mA |
TO-226AA |
e0 |
9 V |
||||
|
Onsemi |
SILICON BILATERAL SWITCH |
CYLINDRICAL |
NO |
BOTTOM |
SINGLE |
1.7 V |
PLASTIC/EPOXY |
.3 mA |
7.5 V |
9 V |
THROUGH-HOLE |
ROUND |
1 |
7.5 V |
3 |
Gated Switches |
125 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.75 mA |
TO-226AA |
e0 |
9 V |
|||
|
Littelfuse |
SILICON UNILATERAL SWITCH |
IN-LINE |
NO |
SINGLE |
SINGLE |
ANODE |
PLASTIC/EPOXY |
230 mA |
285 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
R-PSIP-T3 |
Not Qualified |
|||||||||||||
|
Littelfuse |
SILICON UNILATERAL SWITCH |
IN-LINE |
NO |
SINGLE |
SINGLE |
ANODE |
PLASTIC/EPOXY |
100 mA |
285 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
R-PSIP-T3 |
Not Qualified |
Gated digital switches are electronic devices used in digital circuits to control the flow of current based on a gate input signal. They are commonly used in applications such as data processing, signal routing, and power management.
Gated digital switches can be implemented using various semiconductor technologies, such as MOSFETs (metal-oxide-semiconductor field-effect transistors), CMOS (complementary metal-oxide-semiconductor) switches, and bipolar junction transistors (BJTs). The basic principle of operation involves controlling the state of the switch using a gate signal that either enables or disables the flow of current.
In digital circuits, gated digital switches are often used as electronic switches to control the routing of digital signals. They can also be used as power switches to control the flow of power in high-power applications such as motor control and power management.
Gated digital switches are often designed to operate at high frequencies and can be used in circuits that require high-speed switching. They are typically designed to operate with low power consumption and are often used in battery-operated devices.