Stabistor Diodes

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Manufacturers
Diode Type
Terminal Position
Terminal Form
No. of Terminals
Surface Mount
Package Shape
Package Body Material
Config
Maximum Forward Voltage (VF)
No. of Elements
Reverse Test Voltage
Package Style (Meter)
Sub-Category
Maximum Operating Temperature
Minimum Operating Temperature
Terminal Finish
Minimum Forward Voltage (VF)
JESD-30 Code
Moisture Sensitivity Level (MSL)
Case Connection
Qualification
Maximum Power Dissipation
Additional Features
JEDEC-95 Code
JESD-609 Code
Maximum Time At Peak Reflow Temperature (s)
Peak Reflow Temperature (C)
Diode Element Material
Reference Standard
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Forward Voltage (VF) No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Minimum Forward Voltage (VF) JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Reference Standard

BAS17,215

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

4 V

SMALL OUTLINE

Stabistor Diodes

150 Cel

TIN

.87 V

R-PDSO-G3

1

Not Qualified

.25 W

TO-236AB

e3

30

260

SILICON

MZ2361

Microsemi

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.38 V

1

LONG FORM

Stabistor Diodes

175 Cel

-65 Cel

TIN LEAD

1.24 V

O-LALF-W2

ISOLATED

Not Qualified

.5 W

OPTIONALLY AVAILABLE IN DO-41 PACKAGE WITH 1.5W POWER DISSIPATION

DO-35

e0

SILICON

BA315

Texas Instruments

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

5 V

LONG FORM

200 Cel

O-LALF-W2

ISOLATED

Not Qualified

DIFFERENTIAL RESISTANCE IS 50 OHMS

DO-35

SILICON

G129

Texas Instruments

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

CERAMIC, GLASS-SEALED

SINGLE

1 V

1

LONG FORM

O-GALF-W2

ISOLATED

Not Qualified

SILICON

G130

Texas Instruments

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

CERAMIC, GLASS-SEALED

SINGLE

1 V

1

LONG FORM

O-GALF-W2

ISOLATED

Not Qualified

SILICON

2SD2A

Onsemi

STABISTOR DIODE

SD2A

Onsemi

STABISTOR DIODE

PLE1.5

STMicroelectronics

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

1.55 V

1

5 V

LONG FORM

Stabistor Diodes

125 Cel

-55 Cel

TIN LEAD

1.35 V

O-PALF-W2

ISOLATED

Not Qualified

e0

SILICON

PLE0.7

STMicroelectronics

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

.75 V

1

5 V

LONG FORM

Stabistor Diodes

125 Cel

-55 Cel

TIN LEAD

.65 V

O-PALF-W2

ISOLATED

Not Qualified

e0

SILICON

BA315133

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.05 V

1

5 V

LONG FORM

200 Cel

.875 V

O-LALF-W2

ISOLATED

Not Qualified

.35 W

DO-35

SILICON

BA314143

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.94 V

1

4 V

LONG FORM

200 Cel

.85 V

O-LALF-W2

ISOLATED

Not Qualified

.4 W

DO-35

SILICON

BA314136

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.94 V

1

4 V

LONG FORM

200 Cel

.85 V

O-LALF-W2

ISOLATED

Not Qualified

.4 W

DO-35

SILICON

BA315143

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.05 V

1

5 V

LONG FORM

200 Cel

.875 V

O-LALF-W2

ISOLATED

Not Qualified

.35 W

DO-35

SILICON

BA314

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

4 V

LONG FORM

200 Cel

O-LALF-W2

ISOLATED

Not Qualified

DIFFERENTIAL RESISTANCE IS 30 OHMS

DO-35

SILICON

CECC50001-026

BAS17

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

4 V

SMALL OUTLINE

Stabistor Diodes

150 Cel

Tin (Sn)

.87 V

R-PDSO-G3

1

Not Qualified

.25 W

TO-236AB

e3

30

260

SILICON

BAS17212

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

4 V

SMALL OUTLINE

150 Cel

.87 V

R-PDSO-G3

Not Qualified

.25 W

SILICON

BA315/A52A

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

ISOLATED

Not Qualified

DIFFERENTIAL RESISTANCE IS 50 OHMS

DO-35

SILICON

BA315116

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.05 V

1

5 V

LONG FORM

200 Cel

.875 V

O-LALF-W2

ISOLATED

Not Qualified

.35 W

DO-35

SILICON

933526230215

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

SMALL OUTLINE

TIN

.87 V

R-PDSO-G3

1

Not Qualified

.25 W

e3

SILICON

BA314116

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.94 V

1

4 V

LONG FORM

200 Cel

.85 V

O-LALF-W2

ISOLATED

Not Qualified

.4 W

DO-35

SILICON

BA314L

NXP Semiconductors

STABISTOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.94 V

1

LONG FORM

.85 V

O-LELF-R2

ISOLATED

Not Qualified

SILICON

BA315136

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.05 V

1

5 V

LONG FORM

200 Cel

.875 V

O-LALF-W2

ISOLATED

Not Qualified

.35 W

DO-35

SILICON

BA314133

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.94 V

1

4 V

LONG FORM

200 Cel

.85 V

O-LALF-W2

ISOLATED

Not Qualified

.4 W

DO-35

SILICON

BA220

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

10 V

LONG FORM

200 Cel

O-LALF-W2

ISOLATED

Not Qualified

DO-35

SILICON

BAS17235

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

4 V

SMALL OUTLINE

150 Cel

.87 V

R-PDSO-G3

Not Qualified

.25 W

SILICON

BA315113

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.05 V

1

5 V

LONG FORM

200 Cel

.875 V

O-LALF-W2

ISOLATED

Not Qualified

.35 W

DO-35

SILICON

BA315153

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.05 V

1

5 V

LONG FORM

200 Cel

.875 V

O-LALF-W2

ISOLATED

Not Qualified

.35 W

DO-35

SILICON

BA314T/R

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

4 V

LONG FORM

Stabistor Diodes

200 Cel

O-LALF-W2

ISOLATED

Not Qualified

DIFFERENTIAL RESISTANCE IS 30 OHMS

DO-35

SILICON

CECC50001-026

BA314113

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.94 V

1

4 V

LONG FORM

200 Cel

.85 V

O-LALF-W2

ISOLATED

Not Qualified

.4 W

DO-35

SILICON

BAS17TRL

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

SMALL OUTLINE

TIN

.87 V

R-PDSO-G3

Not Qualified

e3

SILICON

BA314153

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.94 V

1

4 V

LONG FORM

200 Cel

.85 V

O-LALF-W2

ISOLATED

Not Qualified

.4 W

DO-35

SILICON

BA314LTRL

NXP Semiconductors

STABISTOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.94 V

1

LONG FORM

.85 V

O-LELF-R2

ISOLATED

Not Qualified

SILICON

BAS17-T

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

4 V

SMALL OUTLINE

150 Cel

TIN

.87 V

R-PDSO-G3

Not Qualified

.25 W

TO-236AB

e3

SILICON

BAS17T/R

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

4 V

SMALL OUTLINE

Stabistor Diodes

150 Cel

MATTE TIN

.87 V

R-PDSO-G3

Not Qualified

.25 W

TO-236AB

e3

260

SILICON

BAS17TRL13

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

SMALL OUTLINE

TIN

.87 V

R-PDSO-G3

Not Qualified

e3

SILICON

BA314LTRL13

NXP Semiconductors

STABISTOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.94 V

1

LONG FORM

.85 V

O-LELF-R2

ISOLATED

Not Qualified

SILICON

BA315/A52R

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

ISOLATED

Not Qualified

DIFFERENTIAL RESISTANCE IS 50 OHMS

DO-35

SILICON

BZV86-3V2143

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3.45 V

1

5 V

LONG FORM

150 Cel

2.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV87-3V2

NXP Semiconductors

STABISTOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3.45 V

1

5 V

LONG FORM

Stabistor Diodes

150 Cel

2.85 V

O-LELF-R2

ISOLATED

Not Qualified

.35 W

DIFFERENTIAL RESISTANCE IS 35 OHMS

SILICON

BZV86-3V2T/R

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3.45 V

1

LONG FORM

2.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DIFFERENTIAL RESISTANCE IS 35 OHMS

DO-35

SILICON

BZV86-1V4153

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 V

1

5 V

LONG FORM

150 Cel

1.3 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV87-2V0

NXP Semiconductors

STABISTOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

2.15 V

1

5 V

LONG FORM

Stabistor Diodes

150 Cel

1.85 V

O-LELF-R2

ISOLATED

Not Qualified

.35 W

DIFFERENTIAL RESISTANCE IS 30 OHMS

SILICON

BZV86-2V6113

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.8 V

1

5 V

LONG FORM

150 Cel

2.35 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-1V4136

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 V

1

5 V

LONG FORM

150 Cel

1.3 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-3V2133

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3.45 V

1

5 V

LONG FORM

150 Cel

2.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-2V0

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.15 V

1

5 V

LONG FORM

Stabistor Diodes

150 Cel

1.85 V

O-LALF-W2

1

ISOLATED

Not Qualified

.33 W

DIFFERENTIAL RESISTANCE IS 30 OHMS

DO-35

225

SILICON

BZV86-3V2AMO

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3.45 V

1

5 V

LONG FORM

150 Cel

2.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DIFFERENTIAL RESISTANCE IS 35 OHMS

SILICON

BZV86-2V6-3V2

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.8 V

1

LONG FORM

150 Cel

2.35 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

Stabistor Diodes

Stabistor diodes are electronic components that are used as voltage regulators in electronic circuits. They are designed to provide a constant voltage output, independent of the input voltage, current, or temperature.

Stabistor diodes consist of a P-N junction and a resistor that are connected in series. The resistor is typically made of a metal film or carbon composition, and it provides a fixed voltage drop that is added to the voltage drop across the P-N junction. This voltage drop is proportional to the current flowing through the diode, resulting in a constant output voltage.

Stabistor diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.

Stabistor diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and current ratings, depending on the application and the required performance.