STMicroelectronics EEPROM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

M24M02-DRMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

262144 words

2.5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

256KX8

256K

-40 Cel

NICKEL PALLADIUM GOLD

1010DMMR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

1 MHz

3.9 mm

Not Qualified

10 ms

I2C

2097152 bit

1.8 V

e4

30

260

.000002 Amp

4.9 mm

M95M02-DRMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

262144 words

2.5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

200

1.27 mm

85 Cel

256KX8

256K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

4000000 Write/Erase Cycles

5 MHz

3.9 mm

Not Qualified

10 ms

SPI

2097152 bit

1.8 V

e4

30

260

.000003 Amp

4.9 mm

M24M01-RMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

262144 words

2.5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

200

1.27 mm

85 Cel

256KX8

256K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

4000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

2097152 bit

1.8 V

e4

40

260

.000003 Amp

4.9 mm

M24256-BWMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

32768 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

32KX8

32K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

262144 bit

2.5 V

e4

30

260

.000002 Amp

4.9 mm

M95M01-RMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

131072 words

2.5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

5 MHz

3.9 mm

Not Qualified

5 ms

SPI

1048576 bit

1.8 V

e4

30

260

.000003 Amp

4.9 mm

M24512-RMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

65536 words

2.5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

200

1.27 mm

85 Cel

64KX8

64K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

4000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

524288 bit

1.8 V

e4

260

.000001 Amp

4.9 mm

M95256-WMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

32768 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

32KX8

32K

-40 Cel

NICKEL PALLADIUM GOLD SILVER

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

5 MHz

3.9 mm

Not Qualified

5 ms

SPI

262144 bit

2.5 V

e4

30

260

.000005 Amp

4.9 mm

M95512-WMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

8 mA

65536 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

64KX8

64K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

10 MHz

3.9 mm

Not Qualified

5 ms

SPI

524288 bit

2.5 V

e4

30

260

.000005 Amp

4.9 mm

M95M01-RMN6P

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

131072 words

2.5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

128KX8

128K

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

5 MHz

3.9 mm

Not Qualified

5 ms

SPI

1048576 bit

1.8 V

e4

40

260

.000003 Amp

4.9 mm

M24C02-WMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

256 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

2048 bit

2.5 V

e4

30

260

.000001 Amp

4.9 mm

M24C02-WMN6P

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

256 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

2048 bit

2.5 V

e4

30

260

.000001 Amp

4.9 mm

M24C64-WMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

8192 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

8KX8

8K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

65536 bit

2.5 V

e4

30

260

.000002 Amp

4.9 mm

M24C64-RMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

8192 words

2.5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

8KX8

8K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

65536 bit

1.8 V

e4

260

.000001 Amp

4.9 mm

M24256-BWMN6P

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

32768 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

32KX8

32K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

262144 bit

2.5 V

e4

30

260

.000002 Amp

4.9 mm

M95512-RMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

8 mA

65536 words

2.5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

64KX8

64K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

5 MHz

3.9 mm

Not Qualified

5 ms

SPI

524288 bit

1.8 V

e4

30

260

.000005 Amp

4.9 mm

M95128-RDW6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

16384 words

2.5

2/5

8

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

40

.65 mm

85 Cel

16KX8

16K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

.65 mm

100000 Write/Erase Cycles

2 MHz

3 mm

Not Qualified

5 ms

SPI

131072 bit

1.8 V

e4

30

260

.000003 Amp

4.4 mm

M95256-WMN6P

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

32768 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

32KX8

32K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

5 MHz

3.9 mm

Not Qualified

5 ms

SPI

262144 bit

2.5 V

e4

.000005 Amp

4.9 mm

M24512-WMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

65536 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

200

1.27 mm

85 Cel

64KX8

64K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

4000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

524288 bit

2.5 V

e4

260

.000002 Amp

4.9 mm

M24C02-RMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

.8 mA

256 words

2.5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

2048 bit

1.8 V

e4

30

260

.000001 Amp

4.9 mm

M24C64-WMN6P

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

8192 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

8KX8

8K

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

65536 bit

2.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

.000002 Amp

4.9 mm

M24M01-RMN6P

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

262144 words

2.5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

200

1.27 mm

85 Cel

256KX8

256K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

4000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

2097152 bit

1.8 V

e4

40

260

.000003 Amp

4.9 mm

M24M02-DWMN3TP/K

STMicroelectronics

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

2 mA

262144 words

8

SMALL OUTLINE

SOP8,.25

100

1.27 mm

125 Cel

256KX8

256K

-40 Cel

NICKEL PALLADIUM GOLD

1010DMMR

DUAL

R-PDSO-G8

1

5.5 V

1.75 mm

4000000 Write/Erase Cycles

1 MHz

3.9 mm

5 ms

I2C

2097152 bit

2.5 V

e4

30

260

.00004 Amp

4.9 mm

M24256-BRDW6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

32768 words

2.5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

40

.65 mm

85 Cel

32KX8

32K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

5 ms

I2C

262144 bit

1.8 V

e4

30

260

.000001 Amp

4.4 mm

M24C16-DRMF3TG/K

STMicroelectronics

EEPROM

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

NO LEAD

SERIAL

SYNCHRONOUS

2048 words

2.5

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

.5 mm

125 Cel

2KX8

2K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-N8

1

5.5 V

.8 mm

1 MHz

2 mm

4 ms

I2C

16384 bit

1.8 V

e4

260

3 mm

M24128-DFMC6TG

STMicroelectronics

EEPROM

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

2.5 mA

16384 words

1.8/5

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.11,20

EEPROMs

200

.5 mm

85 Cel

16KX8

16K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-N8

1

5.5 V

.6 mm

4000000 Write/Erase Cycles

1 MHz

2 mm

Not Qualified

5 ms

I2C

131072 bit

1.7 V

e4

30

260

.000001 Amp

3 mm

M95640-WMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

8192 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

8KX8

8K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

10 MHz

3.9 mm

Not Qualified

5 ms

SPI

65536 bit

2.5 V

1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

e4

30

260

.000001 Amp

4.9 mm

2.7

M24SR02-YMN6T/2

STMicroelectronics

EEPROM

NOT SPECIFIED

NOT SPECIFIED

M24C32-WMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2.5 mA

4096 words

8

SMALL OUTLINE

1.27 mm

85 Cel

4KX8

4K

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

1

5.5 V

1.75 mm

1 MHz

3.9 mm

Not Qualified

5 ms

I2C

32768 bit

2.5 V

e4

30

260

4.9 mm

M24256-BWMN6TP/A

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

32768 words

3/5

8

SMALL OUTLINE

SOP8,.25

1

EEPROMs

40

1.27 mm

85 Cel

32KX8

32K

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

262144 bit

2.5 V

NOT SPECIFIED

NOT SPECIFIED

.000002 Amp

4.9 mm

5

M24256-BWMN6TP/K

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

32768 words

3/5

8

SMALL OUTLINE

SOP8,.25

1

EEPROMs

40

1.27 mm

85 Cel

32KX8

32K

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

262144 bit

2.5 V

NOT SPECIFIED

NOT SPECIFIED

.000002 Amp

4.9 mm

M24C02-RDW6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

.8 mA

256 words

2.5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

40

.65 mm

85 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

5 ms

I2C

2048 bit

1.8 V

e4

30

260

.000001 Amp

4.4 mm

M24C64-WMN6TPP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

8192 words

2.7

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

8KX8

8K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

65536 bit

2.5 V

e4

.000002 Amp

4.9 mm

M24C04-RMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

.8 mA

512 words

2.5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

512X8

512

-40 Cel

NICKEL PALLADIUM GOLD

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

4096 bit

1.8 V

e4

30

260

.000001 Amp

4.9 mm

M24C02-WMN6TP/S

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

256X8

256

-40 Cel

DUAL

R-PDSO-G8

5.5 V

1.75 mm

.4 MHz

3.9 mm

5 ms

SPI

2048 bit

2.5 V

4.9 mm

M24C02-RMC6TG

STMicroelectronics

EEPROM

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

2 mA

256 words

2.5

2/5

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.11,20

EEPROMs

40

.5 mm

85 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-N8

1

5.5 V

.6 mm

1000000 Write/Erase Cycles

.4 MHz

2 mm

Not Qualified

5 ms

I2C

2048 bit

1.8 V

e4

30

260

.000001 Amp

3 mm

M24M01-RDW6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

131072 words

2.5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

85 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

5.5 V

1.2 mm

1 MHz

3 mm

5 ms

I2C

1048576 bit

1.8 V

e4

30

260

4.4 mm

M95M02-DWMN3TP/K

STMicroelectronics

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

262144 words

8

SMALL OUTLINE

1.27 mm

125 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G8

5.5 V

1.75 mm

5 MHz

3.9 mm

5 ms

SPI

2097152 bit

2.5 V

NOT SPECIFIED

NOT SPECIFIED

4.9 mm

M95M01-RDW6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

131072 words

2.5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

200

.65 mm

85 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

4000000 Write/Erase Cycles

16 MHz

3 mm

Not Qualified

5 ms

SPI

1048576 bit

1.8 V

e4

30

260

.000001 Amp

4.4 mm

M24C16-WMN6P

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

2048 words

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

200

1.27 mm

85 Cel

OPEN-DRAIN

2KX8

2K

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

1010DDDR

DUAL

R-PDSO-G8

1

5.5 V

1.75 mm

4000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

16384 bit

2.5 V

e4

30

260

.000002 Amp

4.9 mm

M95M01-DWMN3TP/K

STMicroelectronics

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

5 mA

131072 words

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

125 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

4000000 Write/Erase Cycles

10 MHz

3.9 mm

Not Qualified

4 ms

SPI

1048576 bit

2.5 V

e4

30

260

.000002 Amp

4.9 mm

M93C46-WMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

64 words

5

3/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

40

1.27 mm

85 Cel

64X16

64

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

2 MHz

3.9 mm

Not Qualified

5 ms

MICROWIRE

1024 bit

2.5 V

e4

30

260

.00001 Amp

4.9 mm

M95512-RDW6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

8 mA

65536 words

2.5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

40

.65 mm

85 Cel

64KX8

64K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

524288 bit

1.8 V

e4

30

260

.000005 Amp

4.4 mm

M95640-WMN6TP/K

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

8192 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

8KX8

8K

-40 Cel

DUAL

R-PDSO-G8

5.5 V

1.75 mm

20 MHz

3.9 mm

5 ms

SPI

65536 bit

2.5 V

NOT SPECIFIED

NOT SPECIFIED

4.9 mm

M24M02-DRCS6TP/K

STMicroelectronics

EEPROM

INDUSTRIAL

8

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

2.5 mA

262144 words

2.5

2/5

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA8(UNSPEC)

EEPROMs

200

85 Cel

256KX8

256K

-40 Cel

TIN SILVER COPPER

1010DMMR

BOTTOM

HARDWARE

R-PBGA-B8

5.5 V

.58 mm

4000000 Write/Erase Cycles

1 MHz

2.011 mm

Not Qualified

10 ms

I2C

2097152 bit

1.8 V

e1

30

260

.000003 Amp

3.556 mm

M95512-WMN6P

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

8 mA

65536 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

64KX8

64K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

10 MHz

3.9 mm

Not Qualified

5 ms

SPI

524288 bit

2.5 V

e4

40

260

.000005 Amp

4.9 mm

M95256-DRMN3TP/K

STMicroelectronics

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

5 mA

32768 words

5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

125 Cel

32KX8

32K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

4000000 Write/Erase Cycles

5 MHz

3.9 mm

Not Qualified

4 ms

SPI

262144 bit

1.8 V

e4

30

260

.000001 Amp

4.9 mm

M24512-WMN6P

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

65536 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

200

1.27 mm

85 Cel

64KX8

64K

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

4000000 Write/Erase Cycles

1 MHz

3.9 mm

Not Qualified

5 ms

I2C

524288 bit

2.5 V

e4

30

260

.000002 Amp

4.9 mm

M95P32-IXMNT/E

STMicroelectronics

EEPROM

SPI

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.