NXP Semiconductors - TPV8100B

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 2.5 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 16 A; Terminal Finish: NICKEL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .4 A; Package Style (Meter): FLANGE MOUNT; Highest Frequency Band: C BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .05 A; Terminal Form: FLAT; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS; No. of Elements: 1; Case Connection: BASE;

NPN; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: BASE;

1090MP by Microsemi is a NPN RF Power BJT with a max power dissipation of 250W. It operates in L Band frequencies and has a max collector current of 6.5A, making it ideal for amplifier applications in various industries. This transistor comes in a ceramic-metal sealed co-fired package with flat terminals, suitable for surface mount assembly.

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 16 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 25 A; Transistor Application: AMPLIFIER; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3400 MHz; Maximum Power Dissipation (Abs): 19.3 W; Maximum Collector Current (IC): 1.25 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 825 MHz; Maximum Collector Current (IC): 2.75 A; Minimum DC Current Gain (hFE): 10;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Highest Frequency Band: S BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 175 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3500 MHz; Maximum Collector Current (IC): .15 A; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Terminal Form: FLAT; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; No. of Terminals: 2; Qualification: Not Qualified;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): 2 A; No. of Terminals: 8;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON; No. of Elements: 1;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;