STMicroelectronics - AM1517-025M

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): 2.5 A; No. of Terminals: 4;

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F2; Terminal Form: FLAT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9 A; Minimum DC Current Gain (hFE): 15; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e3;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): .5 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Maximum Collector Current (IC): 8 A; Maximum Collector-Emitter Voltage: 32 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Transistor Application: AMPLIFIER;

RF Power Bipolar Transistors; Qualification: Qualified; Terminal Finish: Gold (Au); JESD-609 Code: e4;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.5 A; Case Connection: BASE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): 1.5 A;

MS2209 by Microsemi is a NPN BJT transistor with 7A IC, suitable for L Band applications. It has a ceramic-metal-sealed co-fired package and operates at max temp of 200°C. Ideal for amplifier circuits due to its single configuration and square package shape.

RF Power Bipolar Transistors;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 4 A; Case Connection: BASE;

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .25 A; Transistor Application: AMPLIFIER; JESD-30 Code: O-CRFM-F2;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 8 A; JESD-609 Code: e0;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Highest Frequency Band: L BAND; Qualification: Not Qualified;

RF Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;