NXP Semiconductors - BLV909-T

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BLV909-T by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLV909-T
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL; Case Connection: ISOLATED;
Datasheet BLV909-T Datasheet
NAME DESCRIPTION
Minimum Power Gain (Gp): 9 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): 1.5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
No. of Terminals: 8
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-CDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 29 W
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