RF Power Bipolar Junction Transistors (BJT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
ISL73127RHVF	Renesas Electronics	NPN	SEPARATE, 5 ELEMENTS	YES	8000 MHz		.0113 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	.5 V		FLAT	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	FLATPACK		1.25 W	40	125 Cel		SILICON	8 V	-55 Cel	GOLD	DUAL	R-CDFP-F16				LOW NOISE		e4	30	260	MIL-38535; RH - 100K Rad(Si)
5962F0721805VXC	Renesas Electronics	NPN	SEPARATE, 5 ELEMENTS	YES	8000 MHz		.0113 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	.5 V		FLAT	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	FLATPACK		1.25 W	40	125 Cel		SILICON	8 V	-55 Cel	Gold (Au)	DUAL	R-CDFP-F16			Qualified	LOW NOISE		e4	30	260	MIL-38535; RH - 300K Rad(Si)
5962F0721806VXC	Renesas Electronics	PNP	SEPARATE, 5 ELEMENTS	YES	5500 MHz		.0113 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	.5 V		FLAT	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	FLATPACK		1.25 W	20	125 Cel		SILICON	8 V	-55 Cel	Gold (Au)	DUAL	R-CDFP-F16			Qualified	LOW NOISE		e4	30	260	MIL-38535; RH - 300K Rad(Si)
2SC4001-K	Renesas Electronics	NPN	SINGLE	NO	300 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	FLANGE MOUNT					3.5 pF	SILICON	250 V		TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified			e0
2SC5023B	Renesas Electronics	NPN	SINGLE	NO	1000 MHz		.2 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	1		3	FLANGE MOUNT					6 pF	SILICON	100 V			SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
2SC5023C	Renesas Electronics	NPN	SINGLE	NO	1000 MHz		.2 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	1		3	FLANGE MOUNT					6 pF	SILICON	100 V			SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
5962F0721801VXC	Renesas Electronics																									GOLD					Qualified			e4
ISL73096RHVF	Renesas Electronics	NPN AND PNP	SEPARATE, 5 ELEMENTS	YES	8000 MHz		.0113 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	.5 V		FLAT	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	FLATPACK		1.25 W	40	125 Cel		SILICON	8 V	-55 Cel	GOLD	DUAL	R-CDFP-F16				LOW NOISE		e4	30	260	MIL-38535; RH - 100K Rad(Si)
2SC4001-L	Renesas Electronics	NPN	SINGLE	NO	300 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	FLANGE MOUNT					3.5 pF	SILICON	250 V		TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified			e0
NE69039	Renesas Electronics	NPN	SINGLE	YES			.3 A	PLASTIC/EPOXY	AMPLIFIER		5 dB	GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE		.2 W	60	150 Cel		SILICON	6 V			DUAL	R-PDSO-G4		COLLECTOR
5962F0721805V9A	Renesas Electronics	NPN	SEPARATE, 5 ELEMENTS	YES	8000 MHz		.0113 A	UNSPECIFIED	AMPLIFIER	.5 V		NO LEAD	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	UNCASED CHIP		1.25 W	40	125 Cel		SILICON	8 V	-55 Cel	Gold (Au)	UPPER	R-XUUC-N16			Qualified	LOW NOISE		e4	30	260	MIL-38535; RH - 300K Rad(Si)
2SC4001-M-AZ	Renesas Electronics	NPN	SINGLE	NO	300 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	FLANGE MOUNT					3.5 pF	SILICON	250 V			SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
5962F0721801V9A	Renesas Electronics																									GOLD					Qualified			e4
ISL73128EHVX	Renesas Electronics	PNP	SEPARATE, 5 ELEMENTS	YES	5500 MHz		.0113 A	UNSPECIFIED	AMPLIFIER	.5 V		NO LEAD	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	UNCASED CHIP		1.25 W	20	125 Cel		SILICON	8 V	-55 Cel	GOLD	UPPER	R-XUUC-N16				LOW NOISE		e4	30	260	MIL-38535; RH - 100K Rad(Si)
ISL73128RHVX	Renesas Electronics	PNP	SEPARATE, 5 ELEMENTS	YES	5500 MHz		.0113 A	UNSPECIFIED	AMPLIFIER	.5 V		NO LEAD	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	UNCASED CHIP		1.25 W	20	125 Cel		SILICON	8 V	-55 Cel	GOLD	UPPER	R-XUUC-N16				LOW NOISE		e4	30	260	MIL-38535; RH - 100K Rad(Si)
2SC4001-K-AZ	Renesas Electronics	NPN	SINGLE	NO	300 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	FLANGE MOUNT					3.5 pF	SILICON	250 V			SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SC4001-M	Renesas Electronics	NPN	SINGLE	NO	300 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	FLANGE MOUNT					3.5 pF	SILICON	250 V		TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified			e0
ISL73096EHVF	Renesas Electronics	NPN AND PNP	SEPARATE, 5 ELEMENTS	YES	8000 MHz		.0113 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	.5 V		FLAT	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	FLATPACK		1.25 W	40	125 Cel		SILICON	8 V	-55 Cel	GOLD	DUAL	R-CDFP-F16				LOW NOISE		e4	30	260	MIL-38535; RH - 100K Rad(Si)
2SC3286-M	Renesas Electronics	NPN	COMMON EMITTER, 2 ELEMENTS	YES		.28 W	24 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	2	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		20	200 Cel	240 pF	SILICON	32 V			DUAL	R-CDFM-F4		EMITTER		HIGH RELIABILITY
ISL73096RHVX	Renesas Electronics	NPN AND PNP	SEPARATE, 5 ELEMENTS	YES	8000 MHz		.0113 A	UNSPECIFIED	AMPLIFIER	.5 V		NO LEAD	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	UNCASED CHIP		1.25 W	40	125 Cel		SILICON	8 V	-55 Cel	GOLD	UPPER	R-XUUC-N16				LOW NOISE		e4	30	260	MIL-38535; RH - 100K Rad(Si)
ISL73127RHVX	Renesas Electronics	NPN	SEPARATE, 5 ELEMENTS	YES	8000 MHz		.0113 A	UNSPECIFIED	AMPLIFIER	.5 V		NO LEAD	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	UNCASED CHIP		1.25 W	40	125 Cel		SILICON	8 V	-55 Cel	GOLD	UPPER	R-XUUC-N16				LOW NOISE		e4	30	260	MIL-38535; RH - 100K Rad(Si)
NESG270034-AZ	Renesas Electronics	NPN	SINGLE	YES		1.9 W	.75 A	PLASTIC/EPOXY	AMPLIFIER			FLAT	RECTANGULAR	1		3	SMALL OUTLINE	BIP RF Small Signal		80	150 Cel		SILICON GERMANIUM	7.2 V		TIN BISMUTH	SINGLE	R-PSSO-F3		EMITTER	Not Qualified			e6
2SC892	Renesas Electronics	NPN	SINGLE	NO		18 W	1.2 A							1				Other Transistors			175 Cel
5962F0721803V9A	Renesas Electronics																									Gold (Au)					Qualified			e4	30	260
ISL73127EHVX	Renesas Electronics	NPN	SEPARATE, 5 ELEMENTS	YES	8000 MHz		.0113 A	UNSPECIFIED	AMPLIFIER	.5 V		NO LEAD	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	UNCASED CHIP		1.25 W	40	125 Cel		SILICON	8 V	-55 Cel	GOLD	UPPER	R-XUUC-N16				LOW NOISE		e4	30	260	MIL-38535; RH - 100K Rad(Si)
NESG270034-T1-AZ-FB	Renesas Electronics
5962F0721804VXC	Renesas Electronics	NPN AND PNP	SEPARATE, 5 ELEMENTS	YES	8000 MHz		.0113 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	.5 V		FLAT	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	FLATPACK		1.25 W	40	125 Cel		SILICON	8 V	-55 Cel	Gold (Au)	DUAL	R-CDFP-F16			Qualified	LOW NOISE		e4	30	260	MIL-38535; RH - 300K Rad(Si)
2SC5390	Renesas Electronics	NPN	SINGLE	NO	1400 MHz	1.4 W	.2 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	1		3	FLANGE MOUNT	Other Transistors		30	150 Cel	3.5 pF	SILICON	110 V			SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-126
2SC5336-T1	Renesas Electronics	NPN	SINGLE	YES	6500 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER			FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE			50	150 Cel		SILICON	12 V			SINGLE	R-PSSO-F3		COLLECTOR
5962F0721806V9A	Renesas Electronics	PNP	SEPARATE, 5 ELEMENTS	YES	5500 MHz		.0113 A	UNSPECIFIED	AMPLIFIER	.5 V		NO LEAD	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	UNCASED CHIP		1.25 W	20	125 Cel		SILICON	8 V	-55 Cel	Gold (Au)	UPPER	R-XUUC-N16			Qualified	LOW NOISE		e4	30	260	MIL-38535; RH - 300K Rad(Si)
2SC4001-L-AZ	Renesas Electronics	NPN	SINGLE	NO	300 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	FLANGE MOUNT					3.5 pF	SILICON	250 V			SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
5962F0721803VXC	Renesas Electronics																									Gold (Au)					Qualified			e4
NE69039FB	Renesas Electronics	NPN	SINGLE	YES			.3 A	PLASTIC/EPOXY	AMPLIFIER		5 dB	GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE		.2 W		150 Cel		SILICON	6 V			DUAL	R-PDSO-G4		COLLECTOR
ISL73128EHVF	Renesas Electronics	PNP	SEPARATE, 5 ELEMENTS	YES	5500 MHz		.0113 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	.5 V		FLAT	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	FLATPACK		1.25 W	20	125 Cel		SILICON	8 V	-55 Cel	GOLD	DUAL	R-CDFP-F16				LOW NOISE		e4	30	260	MIL-38535; RH - 100K Rad(Si)
ISL73127EHVF	Renesas Electronics	NPN	SEPARATE, 5 ELEMENTS	YES	8000 MHz		.0113 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	.5 V		FLAT	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	FLATPACK		1.25 W	40	125 Cel		SILICON	8 V	-55 Cel	GOLD	DUAL	R-CDFP-F16				LOW NOISE		e4	30	260	MIL-38535; RH - 100K Rad(Si)
2SC5023	Renesas Electronics	NPN	SINGLE	NO	1000 MHz		.2 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	1		3	FLANGE MOUNT					6 pF	SILICON	100 V			SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
5962F0721802V9A	Renesas Electronics																									Gold (Au)					Qualified			e4	30	260
NESG270034-T1-AZ	Renesas Electronics	NPN	SINGLE	YES		1.9 W	.75 A	PLASTIC/EPOXY	AMPLIFIER			FLAT	RECTANGULAR	1		3	SMALL OUTLINE	BIP RF Small Signal		80	150 Cel		SILICON GERMANIUM	7.2 V		TIN BISMUTH	SINGLE	R-PSSO-F3		EMITTER	Not Qualified			e6
ISL73096RHF/PROTO	Renesas Electronics																									GOLD								e4
ISL73128RHX/SAMPLE	Renesas Electronics
ISL73127RHF/PROTO	Renesas Electronics																									GOLD								e4
ISL73128RHF/PROTO	Renesas Electronics																									GOLD								e4
ISL73127RHX/SAMPLE	Renesas Electronics
ISL73096RHX/SAMPLE	Renesas Electronics
2SC4178-T1-A	Renesas Electronics
AT-64000-GP4	Broadcom	NPN	SINGLE	YES		3 W	.2 A	UNSPECIFIED	AMPLIFIER			NO LEAD	RECTANGULAR	1	HIGH FREQUENCY BAND	5	UNCASED CHIP	Other Transistors		20	200 Cel		SILICON	20 V			UPPER	R-XUUC-N5	1		Not Qualified
AT-64020	Broadcom	NPN	SINGLE	YES			.2 A	METAL	AMPLIFIER			FLAT	ROUND	1	S BAND	4	DISK BUTTON	Other Transistors		20	200 Cel		SILICON	20 V		GOLD	RADIAL	O-MRDB-F4	1		Not Qualified	HIGH RELIABILITY		e4		260
KSC5034	Samsung	NPN	SINGLE	NO	800 MHz	10 W	.5 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		3	FLANGE MOUNT	Other Transistors		40	150 Cel		SILICON	60 V			SINGLE	R-PSFM-T3			Not Qualified		TO-126

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.