Renesas Electronics - 5962F0721801V9A

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 3.5 A; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9 A; Minimum DC Current Gain (hFE): 15; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 12 W; Maximum Collector Current (IC): 1 A;

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 3 A; Terminal Position: RADIAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3300 MHz; Maximum Power Dissipation (Abs): 2.2 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 21.8 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Terminal Position: DUAL; Minimum DC Current Gain (hFE): 100;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 25 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 8 A; Transistor Application: SWITCHING;

RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Transistor Element Material: SILICON; Terminal Form: FLAT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Terminal Form: FLAT; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): 76 W; Maximum Collector Current (IC): 6 A;

RF Power Bipolar Transistors;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 32 W; Maximum Collector Current (IC): 2.1 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .4 A; Minimum Power Gain (Gp): 6.5 dB;