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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | 5962F0721805V9A |
| Description | NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Maximum Time At Peak Reflow Temperature (s): 30; |
| Datasheet | 5962F0721805V9A Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 8000 MHz |
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | .0113 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SEPARATE, 5 ELEMENTS |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Surface Mount: | YES |
| Terminal Finish: | Gold (Au) |
| No. of Terminals: | 16 |
| Terminal Position: | UPPER |
| Package Style (Meter): | UNCASED CHIP |
| JESD-30 Code: | R-XUUC-N16 |
| No. of Elements: | 5 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 125 Cel |
| Maximum Power Dissipation Ambient: | 1.25 W |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 40 |
| JESD-609 Code: | e4 |
| Minimum Operating Temperature: | -55 Cel |
| Qualification: | Qualified |
| Maximum Collector-Emitter Voltage: | 8 V |
| Additional Features: | LOW NOISE |
| Reference Standard: | MIL-38535; RH - 300K Rad(Si) |
| Peak Reflow Temperature (C): | 260 |
| Maximum VCEsat: | .5 V |
