Renesas Electronics - 5962F0721803VXC

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1650 MHz; Maximum Collector Current (IC): 8 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Minimum DC Current Gain (hFE): 40;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2200 W; Maximum Collector Current (IC): 52.5 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; No. of Elements: 1; JESD-30 Code: R-CDFM-F2;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 15;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .0011 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): .3 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 350 MHz; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 10 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 1.2 A; Maximum Operating Temperature: 175 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 16 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; No. of Terminals: 2; JESD-30 Code: R-CDFM-F2;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4 W; Maximum Collector Current (IC): .25 A; Highest Frequency Band: C BAND;

RF Power Bipolar Transistors; Terminal Finish: GOLD; Qualification: Qualified; JESD-609 Code: e4;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 786 W; Maximum Collector Current (IC): 21 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 175 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): .25 A; Maximum Collector-Emitter Voltage: 16 V;