RF Power Bipolar Junction Transistors (BJT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BLT50T/R	NXP Semiconductors	NPN	SINGLE	YES			.5 A	PLASTIC/EPOXY	AMPLIFIER	10 dB	GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	SMALL OUTLINE		2 W	25	175 Cel	6 pF	SILICON	10 V		DUAL	R-PDSO-G4		COLLECTOR	Not Qualified	HIGH RELIABILITY
BLW78	NXP Semiconductors	NPN	SINGLE	NO	350 MHz	160 W	10 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	6 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		20	200 Cel		SILICON	35 V		RADIAL	O-CRFM-F4		ISOLATED	Not Qualified
BLT50-T	NXP Semiconductors	NPN	SINGLE	YES			.5 A	PLASTIC/EPOXY	AMPLIFIER	10 dB	GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	SMALL OUTLINE		2 W	25	175 Cel	6 pF	SILICON	10 V		DUAL	R-PDSO-G4		COLLECTOR	Not Qualified	HIGH RELIABILITY
BLT52T/R	NXP Semiconductors	NPN	SINGLE	YES			2.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8 dB	GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE		23 W	25	200 Cel		SILICON	10 V		DUAL	R-CDSO-G8			Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
PTB20141	Infineon Technologies	NPN		YES			2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR		L BAND	6	FLANGE MOUNT						SILICON		MATTE TIN	DUAL	R-CDFM-F6		EMITTER	Not Qualified	HIGH RELIABILITY	e3
BFT98	Infineon Technologies	NPN	SINGLE	NO	3300 MHz	2.2 W	.2 A	CERAMIC, METAL-SEALED COFIRED			FLAT	ROUND	1		4	POST/STUD MOUNT	Other Transistors			175 Cel		SILICON	20 V		RADIAL	O-CRPM-F4			Not Qualified
PTB20216	Infineon Technologies	NPN	SINGLE	YES			1 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		NO LEAD	RECTANGULAR	1	L BAND	3	CHIP CARRIER						SILICON	20 V	MATTE TIN	QUAD	R-CQCC-N3			Not Qualified	HIGH RELIABILITY	e3
PTB20228	Infineon Technologies	NPN	SINGLE	YES			1 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		NO LEAD	RECTANGULAR	1	L BAND	3	CHIP CARRIER						SILICON	20 V	MATTE TIN	QUAD	R-CQCC-N3			Not Qualified	HIGH RELIABILITY	e3
PTB20181	Infineon Technologies	NPN	SINGLE	YES			1.1 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		NO LEAD	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	CHIP CARRIER						SILICON	28 V	MATTE TIN	DUAL	R-CDCC-N4			Not Qualified	HIGH RELIABILITY	e3
BFT99	Infineon Technologies	NPN	SINGLE	NO	3300 MHz	4 W	.35 A	CERAMIC, METAL-SEALED COFIRED			FLAT	ROUND	1		4	POST/STUD MOUNT	Other Transistors			175 Cel		SILICON	20 V		RADIAL	O-CRPM-F4			Not Qualified
PTB20134	Infineon Technologies	NPN		YES			8 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR		ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT						SILICON	25 V	MATTE TIN	DUAL	R-CDFM-F6		EMITTER	Not Qualified	HIGH RELIABILITY	e3
PTB20081	Infineon Technologies	NPN	COMMON EMITTER, 2 ELEMENTS	YES			12 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT						SILICON	25 V	MATTE TIN	DUAL	R-CDFM-F4		EMITTER	Not Qualified	HIGH RELIABILITY	e3
BFG235E6327	Infineon Technologies	NPN	SINGLE WITH BUILT-IN RESISTOR	YES	5500 MHz	2 W	.3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE	Other Transistors		75	150 Cel	3.6 pF	SILICON	15 V		DUAL	R-PDSO-G4		COLLECTOR	Not Qualified	BUILT IN EMITTER BALLASTING RESISTOR		NOT SPECIFIED	NOT SPECIFIED
PTB20170	Infineon Technologies	NPN	SINGLE	YES			6.7 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON		MATTE TIN	DUAL	R-CDFM-F2		EMITTER	Not Qualified	HIGH RELIABILITY	e3
PTB20151	Infineon Technologies	NPN	SINGLE	YES			7.7 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON		MATTE TIN	DUAL	R-CDFM-F2		EMITTER	Not Qualified	HIGH RELIABILITY	e3
BFT98B	Infineon Technologies	NPN	SINGLE	YES	3300 MHz	2.3 W	.2 A	CERAMIC, METAL-SEALED COFIRED			FLAT	ROUND	1		4	DISK BUTTON	Other Transistors			150 Cel		SILICON	20 V		RADIAL	O-CRDB-F4			Not Qualified
PTB20111	Infineon Technologies	NPN	SINGLE	YES			20 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	2	FLANGE MOUNT						SILICON	25 V	MATTE TIN	DUAL	R-CDFM-F2		EMITTER	Not Qualified	HIGH RELIABILITY	e3
PTB20074	Infineon Technologies	NPN		YES			1.4 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR		L BAND	6	FLANGE MOUNT						SILICON		MATTE TIN	DUAL	R-CDFM-F6		EMITTER	Not Qualified	HIGH RELIABILITY	e3
PTB20017	Infineon Technologies	NPN	COMMON EMITTER, 2 ELEMENTS	YES			25 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT						SILICON	25 V	MATTE TIN	DUAL	R-CDFM-F4		EMITTER	Not Qualified	HIGH RELIABILITY	e3
PTB20264	Infineon Technologies	NPN	SINGLE				2 A		AMPLIFIER				1	L BAND								SILICON	22 V	MATTE TIN					Not Qualified	HIGH RELIABILITY	e3
PTB20046	Infineon Technologies	NPN		YES			.7 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR		L BAND	6	FLANGE MOUNT						SILICON		MATTE TIN	DUAL	R-CDFM-F6		EMITTER	Not Qualified	HIGH RELIABILITY	e3
PTB20082	Infineon Technologies	NPN	SINGLE	YES			1.4 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT						SILICON		MATTE TIN	DUAL	R-CDFM-F2		EMITTER	Not Qualified	HIGH RELIABILITY	e3
SP000748528	Infineon Technologies
SP000748378	Infineon Technologies	PNP	SINGLE	YES	100 MHz		3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE				150 Cel		SILICON	45 V		DUAL	R-PDSO-G4		COLLECTOR						AEC-Q101
BDP948E6433HTMA1	Infineon Technologies	PNP	SINGLE	YES	100 MHz		3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE						SILICON	45 V		DUAL	R-PDSO-G4		COLLECTOR						AEC-Q101
BDP950-E6327	Infineon Technologies	PNP	SINGLE	YES	100 MHz	3 W	3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE	Other Transistors		85	150 Cel		SILICON	60 V		DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified				260
BDP954-E6327	Infineon Technologies	PNP	SINGLE	YES	100 MHz	3 W	3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	100 V	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		e3		260
BDP950-E6433	Infineon Technologies	PNP	SINGLE	YES	100 MHz	3 W	3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE	Other Transistors		85	150 Cel		SILICON	60 V	TIN LEAD	DUAL	R-PDSO-G4		COLLECTOR	Not Qualified		e0
BDP954E6327HTSA1	Infineon Technologies																										1
BDP948E6327HTSA1	Infineon Technologies	PNP	SINGLE	YES	100 MHz		3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE						SILICON	45 V	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR			e3			AEC-Q101
BDP948-E6327	Infineon Technologies	PNP	SINGLE	YES	100 MHz	3 W	3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE	Other Transistors		85	150 Cel		SILICON	45 V	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		e3		260
BDP950	Infineon Technologies	PNP	SINGLE	YES	100 MHz	1.5 W	3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE	Other Transistors		85	150 Cel		SILICON	60 V	Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		e3	NOT SPECIFIED	NOT SPECIFIED
BDP948-E6433	Infineon Technologies	PNP	SINGLE	YES	100 MHz	3 W	3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE	Other Transistors		85	150 Cel		SILICON	45 V	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		e3		260
BDP948H6327TR	Infineon Technologies	PNP	SINGLE	YES	100 MHz		3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE						SILICON	45 V		DUAL	R-PDSO-G4		COLLECTOR
BDP954-E6433	Infineon Technologies	PNP	SINGLE	YES	100 MHz	3 W	3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	100 V		DUAL	R-PDSO-G4		COLLECTOR	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
BDP948H6433XTMA1	Infineon Technologies	PNP	SINGLE	YES	100 MHz		3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE						SILICON	45 V		DUAL	R-PDSO-G4		COLLECTOR				NOT SPECIFIED	NOT SPECIFIED
BDP948	Infineon Technologies	PNP	SINGLE	YES	100 MHz	1.5 W	3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE	Other Transistors		85	150 Cel		SILICON	45 V	Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		e3	NOT SPECIFIED	NOT SPECIFIED
BDP954H6327TR	Infineon Technologies	PNP	SINGLE	YES	100 MHz		3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE						SILICON	100 V		DUAL	R-PDSO-G4		COLLECTOR
BDP954	Infineon Technologies	PNP	SINGLE	YES	100 MHz	1.5 W	3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	100 V	Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		e3	NOT SPECIFIED	NOT SPECIFIED
BDP950E6327HTSA1	Infineon Technologies	PNP	SINGLE	YES	100 MHz		3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE						SILICON	60 V	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR			e3			AEC-Q101
BDP950E6327/SN	Infineon Technologies
BDP950H6327TR	Infineon Technologies	PNP	SINGLE	YES	100 MHz		3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE						SILICON	60 V		DUAL	R-PDSO-G4		COLLECTOR
BDP948H6433TR	Infineon Technologies	PNP	SINGLE	YES	100 MHz		3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1		4	SMALL OUTLINE						SILICON	45 V		DUAL	R-PDSO-G4		COLLECTOR
MAX2601ESA	Maxim Integrated	NPN	SINGLE	YES			1.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	15 V	TIN LEAD	DUAL	R-PDSO-G8	1		Not Qualified		e0
MAX2602ESA-T	Maxim Integrated	NPN	SINGLE WITH BUILT-IN DIODE	YES			1.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	15 V	TIN LEAD	DUAL	R-PDSO-G8	1		Not Qualified		e0
MAX2601ESA-T	Maxim Integrated	NPN	SINGLE	YES			1.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	15 V	TIN LEAD	DUAL	R-PDSO-G8	1		Not Qualified		e0
MAX2602ESA	Maxim Integrated	NPN	SINGLE WITH BUILT-IN DIODE	YES			1.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	15 V	TIN LEAD	DUAL	R-PDSO-G8	1		Not Qualified		e0
MAX2602E/D	Maxim Integrated	NPN	SINGLE WITH BUILT-IN DIODE	YES			1.2 A	UNSPECIFIED	AMPLIFIER		NO LEAD	UNSPECIFIED	1	ULTRA HIGH FREQUENCY BAND		UNCASED CHIP				150 Cel		SILICON	15 V	TIN LEAD	UPPER	X-XUUC-N	3		Not Qualified		e0

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.