Onsemi Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
SBCW72LT1G	Onsemi	NPN	SINGLE	YES	300 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	200	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
BC807-40WT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.46 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	250	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
KST4403MTF	Onsemi	PNP	SINGLE	YES	200 MHz	.35 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	100			SILICON	40 V	35 ns		255 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SMUN5233DW1T1G	Onsemi	NPN	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES		.256 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal	80			SILICON	50 V				MATTE TIN	DUAL	R-PDSO-G6	1			BUILT IN BIAS RESISTANCE RATIO IS 10		e3	30	260	AEC-Q101
NST489AMT1G	Onsemi	NPN	SINGLE	YES	300 MHz	1.75 W	2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	6	SMALL OUTLINE	Other Transistors	200	150 Cel		SILICON	30 V				MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
BC204	Onsemi	PNP	SINGLE	NO		.2 W	.1 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	50			SILICON						BOTTOM	O-PBCY-T3			Not Qualified		TO-92
BCW72LT1G	Onsemi	NPN	SINGLE	YES	300 MHz	.225 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	200	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
MBT2222ADW1T1G	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	300 MHz	.15 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors	75	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
MMBTA55LT1G	Onsemi	PNP	SINGLE	YES	50 MHz	.225 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	100	150 Cel		SILICON	60 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
BC548CG	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	420	150 Cel		SILICON	30 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
BC556BTFR	Onsemi	PNP	SINGLE	NO	150 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	200	150 Cel		SILICON	65 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
KSC945CGTA	Onsemi	NPN	SINGLE	NO	300 MHz		.15 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL		200	150 Cel		SILICON	50 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBT2222ATT1	Onsemi	NPN	SINGLE	YES	300 MHz	.15 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	40	150 Cel		SILICON	40 V	35 ns		285 ns	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified			e0	30	235
SBSP52T1G	Onsemi	NPN	DARLINGTON	YES			1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE		2000			SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR			TO-261AA	e3	30	260
SMMBTA13LT1G	Onsemi	NPN	SINGLE	YES	125 MHz	.3 W	.3 A						1			Other Transistors	5000	150 Cel							MATTE TIN			1					e3	30	260
BC560C	Onsemi	PNP	SINGLE	NO	250 MHz	.625 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	380	150 Cel		SILICON	45 V				TIN LEAD	BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-226AA	e0		235
KSA1013YTA	Onsemi	PNP	SINGLE	NO	50 MHz	.9 W	1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	160	150 Cel		SILICON	160 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified			e3
SBC807-25WT1G	Onsemi																								MATTE TIN			1					e3	30	260
SMUN2211T1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.338 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal	35			SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1			BUILT-IN BIAS RESISTOR RATIO IS 1		e3	NOT SPECIFIED	NOT SPECIFIED
BC546BZL1G	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	200	150 Cel		SILICON	65 V				Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e1	40	260
KSC945CGBU	Onsemi	NPN	SINGLE	NO	300 MHz		.15 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL		200	150 Cel		SILICON	50 V				Tin (Sn)	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
ZTX614	Onsemi	NPN	DARLINGTON	NO			.8 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL		10000			SILICON	100 V					BOTTOM	O-PBCY-T3					TO-226AE
MBT3906DW1T1G	Onsemi	PNP	SEPARATE, 2 ELEMENTS	YES	250 MHz	.15 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors	30	150 Cel		SILICON	40 V	70 ns		300 ns	MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
MPSA06RLRAG	Onsemi	NPN	SINGLE	NO	100 MHz	.625 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	100	150 Cel		SILICON	80 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
BC327-25RL1G	Onsemi	PNP	SINGLE	NO	260 MHz	.625 W	.8 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	160	150 Cel		SILICON	45 V				Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e1	40	260
BC546BRL1G	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	200	150 Cel		SILICON	65 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e1		260
MMBT5962	Onsemi	NPN	SINGLE	YES	100 MHz	.35 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	600	150 Cel		SILICON	45 V				Tin (Sn)	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE		e3	30	260
MMBTA13LT1G	Onsemi	NPN	DARLINGTON	YES	125 MHz	.225 W	.3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	10000	150 Cel		SILICON	30 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
NSS40301MDR2G	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.783 W	3 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	8	SMALL OUTLINE	Other Transistors	180	150 Cel		SILICON	40 V	200 ns		890 ns	MATTE TIN	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
2N6517TA	Onsemi	NPN	SINGLE	NO	40 MHz	.625 W	.5 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	15	150 Cel		SILICON	350 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC817-25LT1	Onsemi	NPN	SINGLE	YES	100 MHz	.225 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	160	150 Cel		SILICON	45 V		-55 Cel		Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
BCX17LT1G	Onsemi	PNP	SINGLE	YES		.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	40	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
KST2907AMTF	Onsemi	PNP	SINGLE	YES	200 MHz	.35 W	.6 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	100			SILICON	60 V	50 ns		110 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC847BMTF	Onsemi	NPN	SINGLE	YES	300 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MPSA13G	Onsemi	NPN	DARLINGTON	NO	125 MHz	1.5 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	10000	150 Cel		SILICON	30 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
SS9014CBU	Onsemi	NPN	SINGLE	NO	270 MHz	.45 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	200	150 Cel		SILICON	45 V				Tin (Sn)	BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92	e3
BC848BLT1	Onsemi	NPN	SINGLE	YES	100 MHz	.225 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	200	150 Cel		SILICON	30 V				Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
KSA992FBTA	Onsemi	PNP	SINGLE	NO	50 MHz	.5 W	.05 A						1			Other Transistors	300	150 Cel							MATTE TIN								e3
MPSA13RLRAG	Onsemi	NPN	DARLINGTON	NO	125 MHz	1.5 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	10000	150 Cel		SILICON	30 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
P2N2222AG	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	75	150 Cel		SILICON	40 V	35 ns		285 ns	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1	40	260
SMUN5214DW1T1G	Onsemi	NPN	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES		.256 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal	80			SILICON	50 V				MATTE TIN	DUAL	R-PDSO-G6	1			BUILT IN BIAS RESISTANCE RATIO IS 4.7		e3	30	260	AEC-Q101
BC817-40LT1	Onsemi	NPN	SINGLE	YES	100 MHz	.225 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	250	150 Cel		SILICON	45 V				Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
2N4403TA	Onsemi	PNP	SINGLE	NO	200 MHz	.35 W	.6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	100	150 Cel		SILICON	40 V	35 ns		255 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC517-D74Z	Onsemi	NPN	DARLINGTON	NO		.625 W	1.2 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	30000	150 Cel		SILICON	30 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC858BWT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	220	150 Cel	4.5 pF	SILICON	30 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
2N5401YTA	Onsemi	PNP	SINGLE	NO	100 MHz		.6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL		50	150 Cel		SILICON	150 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMUN2211LT3G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal	35	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 1	TO-236	e3	40	260
MMBT5551LT1	Onsemi	NPN	SINGLE	YES	200 MHz	.225 W	.06 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	30	150 Cel		SILICON	160 V		-55 Cel		Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235

Onsemi Small Signal Bipolar Junction Transistors (BJT) 2,400+

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