Onsemi Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
2SD1624T-TD-E	Onsemi	NPN	SINGLE	YES	150 MHz		3 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE		200			SILICON	50 V				Tin/Bismuth (Sn/Bi)	SINGLE	R-PSSO-F3	1	COLLECTOR			TO-243AA	e6	30	260
BC546ATA	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	110	150 Cel		SILICON	65 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92	e3
BC549BTF	Onsemi	NPN	SINGLE	NO	300 MHz	.5 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	200	150 Cel		SILICON	30 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92	e3
BC80716MTF	Onsemi	PNP	SINGLE	YES	100 MHz	.35 W	.8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	60	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC847BM3T5G	Onsemi	NPN	SINGLE	YES	100 MHz	.6 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	200	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-F3	1		Not Qualified			e3	30	260
BC857S	Onsemi	PNP	SEPARATE, 2 ELEMENTS	YES	200 MHz	.3 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors	125	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
BSV52	Onsemi	NPN	SINGLE	YES	400 MHz	.225 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	25	150 Cel		SILICON	12 V	12 ns	-55 Cel	18 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
DTC114TET1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal	160	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR		e3	40	260
KSP94TA	Onsemi	PNP	SINGLE	NO		.625 W	.3 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	40	150 Cel		SILICON	400 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBT5087	Onsemi	PNP	SINGLE	YES	40 MHz	.225 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	250	150 Cel		SILICON	50 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE		e3	30	260
MMUN2238LT1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal	160	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR	TO-236	e3	40	260
NSS1C201MZ4T1G	Onsemi	NPN	SINGLE	YES	100 MHz	.8 W	2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	40	150 Cel		SILICON	100 V				MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3	30	260
NST45011MW6T1G	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors	200	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
NSVDTC144WET1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.338 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal	80			SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1			BUILT IN BIAS RESISTANCE RATIO IS 0.47		e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
NSVMMBT5401M3T5G	Onsemi	PNP	SINGLE	YES	180 MHz	.13 W	.06 A	PLASTIC/EPOXY	AMPLIFIER	.6 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		20	150 Cel	6 pF	SILICON	150 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-F3	1					e3	30	260	AEC-Q101
PN4249	Onsemi	PNP	SINGLE	NO	40 MHz	.6 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	100	150 Cel		SILICON	60 V				Tin/Lead (Sn/Pb)	BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92	e0
SBC807-40LT3G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE		250	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
2SB1201S-TL-E	Onsemi	PNP	SINGLE	YES	150 MHz		2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE		140			SILICON	50 V					SINGLE	R-PSSO-G2		COLLECTOR			TO-252
BC848CWT1	Onsemi	NPN	SINGLE	YES	100 MHz	.0024 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	420	150 Cel		SILICON	30 V				TIN LEAD	DUAL	R-PDSO-G3			Not Qualified			e0		235
DTC143ZET1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal	80	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 0.1		e3	40	260
MMBT5401M3T5G	Onsemi	PNP	SINGLE	YES	180 MHz	.13 W	.06 A	PLASTIC/EPOXY	AMPLIFIER	.6 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		20	150 Cel	6 pF	SILICON	150 V		-55 Cel			DUAL	R-PDSO-F3	1						NOT SPECIFIED	260
NSVMMUN2212LT1G	Onsemi	NPN		YES		.4 W	.1 A						1			BIP General Purpose Small Signal	60			SILICON					MATTE TIN			1					e3	30	260
PZT3904T1	Onsemi	NPN	SINGLE	YES	300 MHz	.3 W	.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	30	150 Cel		SILICON	40 V	70 ns		250 ns	TIN LEAD	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e0	30	235
SBC848BLT1	Onsemi	NPN	SINGLE	YES	100 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE		200			SILICON	30 V				Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
2N3906RLRA	Onsemi	PNP	SINGLE	NO	250 MHz	.35 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	30	150 Cel		SILICON	40 V	70 ns		300 ns	Tin/Lead (Sn80Pb20)	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e0	30	235
2SD1048-6-TB-E	Onsemi	NPN	SINGLE	YES	250 MHz	.2 W	.7 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	200	125 Cel		SILICON	15 V				TIN BISMUTH	DUAL	R-PDSO-G3	1				TO-236AB	e6	30	260
BC847CMTF	Onsemi	NPN	SINGLE	YES	300 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	420	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC857AMTF	Onsemi	PNP	SINGLE	YES	150 MHz	.31 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	110	150 Cel	6 pF	SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BCW61BMTF	Onsemi	PNP	SINGLE	YES		.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	80	150 Cel		SILICON	32 V	150 ns		800 ns	Tin (Sn)	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BCW72LT1	Onsemi	NPN	SINGLE	YES	300 MHz	.225 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	200	150 Cel		SILICON	45 V				Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
BCX71JLT1G	Onsemi	PNP	SINGLE	YES		.35 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	100	150 Cel		SILICON	45 V	150 ns		800 ns	Tin (Sn)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
DTC144EM3T5G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.6 W	.1 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal	80	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-F3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 1		e3	40	260
KSA992FATA	Onsemi	PNP	SINGLE	NO	50 MHz	.5 W	.05 A						1			Other Transistors	300	150 Cel							MATTE TIN								e3
MMBT100A	Onsemi	NPN	SINGLE	YES	250 MHz	.35 W	.5 A	PLASTIC/EPOXY	AMPLIFIER	.4 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE		300	150 Cel	4.5 pF	SILICON	45 V		-55 Cel			DUAL	R-PDSO-G3
MMBT2484LT1G	Onsemi	NPN	SINGLE	YES		.225 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	250	150 Cel		SILICON	60 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE	TO-236AB	e3	30	260
MMBT6429LT1	Onsemi	NPN	SINGLE	YES	100 MHz	.225 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	500	150 Cel		SILICON	45 V				Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE	TO-236AB	e0	30	235
MPSA56RLRPG	Onsemi	PNP	SINGLE	NO	50 MHz	.625 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	100	150 Cel		SILICON	80 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
NSVBC857BLT3G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	220	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
NSVMMBT6520LT1G	Onsemi	PNP	SINGLE	YES	40 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	15	150 Cel		SILICON	350 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236	e3	30	260	AEC-Q101
SMUN5211T3G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.31 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal	35			SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1			BUILT IN BIAS RESISTOR RATIO IS 1		e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
2N3904RLRMG	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.2 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	30	150 Cel		SILICON	40 V	70 ns		250 ns	TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
2SC2314E	Onsemi	NPN	SINGLE	NO	250 MHz		1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT		100			SILICON	45 V				Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	SINGLE	R-PSFM-T3			Not Qualified		TO-126	e2
BC847CTT1	Onsemi	NPN	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	420	150 Cel		SILICON	45 V				TIN LEAD	DUAL	R-PDSO-G3	1		Not Qualified			e0		235
BC850BLT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	200	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
BC857CLT3G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	420	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED
BCX56-10R1	Onsemi	NPN	SINGLE	YES	130 MHz	1.56 W	1 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	25	150 Cel		SILICON	80 V				TIN LEAD	SINGLE	R-PSSO-F3	1		Not Qualified			e0
MBT3904DW1T3G	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	300 MHz	.15 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors	30	150 Cel		SILICON	40 V	70 ns		250 ns	MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
MMBT2222A_Q	Onsemi	NPN	SINGLE	YES	300 MHz		.001 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE		75			SILICON	40 V	35 ns		285 ns		DUAL	R-PDSO-G3					TO-236AB

Onsemi Small Signal Bipolar Junction Transistors (BJT) 2,400+

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