Onsemi Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
SPZT2907AT1G	Onsemi	PNP	SINGLE	YES	200 MHz	1.5 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR			TO-261AA	e3	30	260	AEC-Q101
MMPQ2907A	Onsemi	PNP	SEPARATE, 4 ELEMENTS	YES	250 MHz	1 W	.6 A	PLASTIC/EPOXY	SWITCHING	1.6 V	GULL WING	RECTANGULAR	4	16	SMALL OUTLINE	Other Transistors	1 W	50	150 Cel	6 pF	SILICON	60 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G16	3		Not Qualified		MS-012AC	e3	30	260
NSVBC817-40WT1G	Onsemi	NPN	SINGLE	YES	100 MHz		.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			40			SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
BC32740TA	Onsemi	PNP	SINGLE	NO	100 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		170	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MPSA06RA	Onsemi	NPN	SINGLE	NO	100 MHz	.625 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MUN5311DW1T1G	Onsemi	NPN AND PNP	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES		.385 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		35	150 Cel		SILICON	50 V				MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO 1		e3	30	260
SBC857CLT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
2N4401TFR	Onsemi	NPN	SINGLE	NO	250 MHz	.35 W	.6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		255 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
NSVMMBT5401LT3G	Onsemi	PNP	SINGLE	YES	100 MHz		.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			50			SILICON	150 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
SS8550DTA	Onsemi	PNP	SINGLE	NO	200 MHz	1 W	1.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		160	150 Cel		SILICON	25 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
2SA2040-TL-E	Onsemi	PNP	SINGLE	YES	290 MHz		8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE			200			SILICON	50 V					SINGLE	R-PSSO-G2		COLLECTOR			TO-252
BC856CMTF	Onsemi	PNP	SINGLE	YES	150 MHz	.31 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel	6 pF	SILICON	65 V				Tin (Sn)	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT4403LT3G	Onsemi	PNP	SINGLE	YES	200 MHz	.225 W	.6 A	PLASTIC/EPOXY	SWITCHING	.75 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE		.225 W	100	150 Cel	8.5 pF	SILICON	40 V	35 ns	-55 Cel	255 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
MUN5211T1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.31 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 1		e3	40	260
2N4401BU	Onsemi	NPN	SINGLE	NO	250 MHz	.35 W	.6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		255 ns	TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
SBC856ALT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		125	150 Cel		SILICON	65 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
MMBT2369ALT1G	Onsemi	NPN	SINGLE	YES	500 MHz	.225 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		20	150 Cel		SILICON	15 V	12 ns	-55 Cel	18 ns	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
PN2222ARLRAG	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		75	150 Cel		SILICON	40 V	35 ns		285 ns	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1	40	260
SBC807-16LT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC550CBU	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		420	150 Cel		SILICON	45 V				TIN	BOTTOM	O-PBCY-W3		ISOLATED	Not Qualified	LOW NOISE	TO-92	e3
SMMBTA06WT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.15 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
MMPQ2222AR2	Onsemi	NPN	SEPARATE, 4 ELEMENTS	YES	350 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	4	16	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V				TIN LEAD	DUAL	R-PDSO-G16	1		Not Qualified			e0		235
SS8550DBU	Onsemi	PNP	SINGLE	NO	200 MHz	1 W	1.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		160	150 Cel		SILICON	25 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BCV27	Onsemi	NPN	DARLINGTON	YES	220 MHz	.25 W	1.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		20000	150 Cel		SILICON	30 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC846BMTF	Onsemi	NPN	SINGLE	YES	300 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	65 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BF495	Onsemi	NPN	SINGLE	NO	120 MHz		.03 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL			35	150 Cel	1 pF	SILICON	20 V					BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92
MMBTA92LT3G	Onsemi	PNP	SINGLE	YES	50 MHz	.225 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AF	e3	30	260
SMMBTA56LT3G	Onsemi	PNP	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
SBC856BWT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel	4.5 pF	SILICON	65 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
BC847BDW1T3G	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
SMMBT2369ALT1G	Onsemi	NPN	SINGLE	YES		.3 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		20	150 Cel		SILICON	15 V	12 ns		18 ns	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
2N5550TA	Onsemi	NPN	SINGLE	NO	100 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		20	150 Cel		SILICON	140 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC33725TF	Onsemi	NPN	SINGLE	NO		.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		160	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC856ALT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.225 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		125	150 Cel		SILICON	65 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
2N5551BU	Onsemi	NPN	SINGLE	NO	100 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	160 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
PZT2907AT1G	Onsemi	PNP	SINGLE	YES	200 MHz	1.5 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	60 V	45 ns	-65 Cel	100 ns	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3	30	260
2N4401RLRAG	Onsemi	NPN	SINGLE	NO	250 MHz	1.5 W	.6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		255 ns	TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
SMUN5211DW1T1G	Onsemi	NPN	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES		.256 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		35			SILICON	50 V				MATTE TIN	DUAL	R-PDSO-G6	1			BUILT-IN BIAS RESISTOR RATIO IS 1		e3	30	260	AEC-Q101
SDTC114EET1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35			SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1			BUILT IN BIAS RESISTOR RATIO IS 1		e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
NSS12201LT1G	Onsemi	NPN	SINGLE	YES	150 MHz	.54 W	2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	12 V	200 ns		460 ns	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
2N5551TFR	Onsemi	NPN	SINGLE	NO	100 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	160 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC556ABU	Onsemi	PNP	SINGLE	NO	150 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		110	150 Cel		SILICON	65 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC557CG	Onsemi	PNP	SINGLE	NO	320 MHz	1.5 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		420	150 Cel		SILICON	45 V		-55 Cel		TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
SBC857BWT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
SMBT3946DW1T1G	Onsemi	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	300 MHz	.15 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		30	150 Cel		SILICON	40 V	70 ns		250 ns	MATTE TIN	DUAL	R-PDSO-G6	1					e3	30	260	AEC-Q101
BC846ALT3G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		110	150 Cel	4.5 pF	SILICON	65 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
NSVMMBT5401WT1G	Onsemi	PNP	SINGLE	YES	100 MHz		.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			50			SILICON	150 V				MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
KSC1815YTA	Onsemi	NPN	SINGLE	NO	80 MHz	.4 W	.15 A	PLASTIC/EPOXY	AMPLIFIER	.25 V	THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	.4 W	120	125 Cel	3 pF	SILICON	50 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3

Onsemi Small Signal Bipolar Junction Transistors (BJT) 2,400+

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