Onsemi Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BC33716TFR	Onsemi	NPN	SINGLE	NO		.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		100	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMUN2115LT1G	Onsemi	PNP	SINGLE WITH BUILT-IN RESISTOR	YES		.4 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		160	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR	TO-236AB	e3	40	260
MUN5111T1G	Onsemi	PNP	SINGLE WITH BUILT-IN RESISTOR	YES		.31 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 1		e3	40	260
NSS12100M3T5G	Onsemi	PNP	SINGLE	YES		.46 W	.001 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		80	150 Cel		SILICON	12 V				MATTE TIN	DUAL	R-PDSO-F3	1		Not Qualified			e3	30	260
NST3906DXV6T1G	Onsemi	PNP	SEPARATE, 2 ELEMENTS	YES	250 MHz	.5 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		300 ns	MATTE TIN	DUAL	R-PDSO-F6	1		Not Qualified			e3	30	260
SMMUN2213LT1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES			.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			80			SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1			BUILT IN BIAS RESISTANCE RATIO IS 1	TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
2N5551G	Onsemi	NPN	SINGLE	NO	100 MHz	1.5 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	160 V				Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1	40	260
2N5551RL1G	Onsemi	NPN	SINGLE	NO	100 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	160 V				Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e1	40	260
2SC828	Onsemi	NPN	SINGLE	NO	220 MHz	.25 W	.05 A	UNSPECIFIED	AMPLIFIER		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		130	125 Cel		SILICON	25 V				Tin/Lead (Sn/Pb)	BOTTOM	O-XBCY-W3			Not Qualified		TO-92	e0	NOT SPECIFIED	NOT SPECIFIED
BC237BG	Onsemi	NPN	SINGLE	NO	200 MHz	.35 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
BC237BZL1	Onsemi	NPN	SINGLE	NO	200 MHz	.35 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V				TIN LEAD	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e0		235
DTC114YET1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		80	150 Cel		SILICON	50 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 0.21		e3	40	260
NST30010MXV6T1G	Onsemi	PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.661 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	30 V				MATTE TIN	DUAL	R-PDSO-F6	1		Not Qualified			e3	30	260
DTC123JET1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		80	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 0.047		e3	40	260
FJV4114RMTF	Onsemi	PNP	SINGLE WITH BUILT-IN RESISTOR	YES	200 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		68	150 Cel		SILICON	50 V				Tin (Sn)	DUAL	R-PDSO-G3	1		Not Qualified	BUILT IN BIAS RESISTOR RATIO IS 10		e3	30	260
MMBT6520LT1G	Onsemi	PNP	SINGLE	YES	40 MHz	.225 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		15	150 Cel		SILICON	350 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
2N5087G	Onsemi	PNP	SINGLE	NO	40 MHz	1.5 W	.05 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		250	150 Cel		SILICON	50 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
BC237BRL1G	Onsemi	NPN	SINGLE	NO	200 MHz	.35 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e1		260
BC549CG	Onsemi	NPN	SINGLE	NO	250 MHz	.625 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		420	150 Cel		SILICON	45 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92	e1		260
BC550CG	Onsemi	NPN	SINGLE	NO	250 MHz	1.5 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		420	150 Cel		SILICON	45 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92	e1
BC857BWT1	Onsemi	PNP	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	45 V				Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified			e0	30	235
BF494	Onsemi	NPN	SINGLE	NO		.35 W	.03 A	PLASTIC/EPOXY			WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		67	150 Cel		SILICON	20 V				MATTE TIN	BOTTOM	O-PBCY-W3		ISOLATED	Not Qualified		TO-92	e3
MMBTA06LT1	Onsemi	NPN	SINGLE	YES	100 MHz	.225 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V		-55 Cel		Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
MPS650	Onsemi	NPN	SINGLE	NO	75 MHz	.625 W	2 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V				TIN LEAD	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e0		235
MPS6512	Onsemi	NPN	SINGLE	NO		1.5 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.5 V	THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors	.625 W	30	150 Cel	3.5 pF	SILICON	30 V		-65 Cel		TIN LEAD	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e0
MPSA05RA	Onsemi	NPN	SINGLE	NO	100 MHz	.625 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		100	150 Cel		SILICON	60 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
NSBC123EPDXV6T1G	Onsemi	NPN AND PNP	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES		.5 W	.1 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		8	150 Cel		SILICON	50 V				MATTE TIN	DUAL	R-PDSO-F6	1		Not Qualified	BUILT IN BIAS RESISTOR RATIO IS 1		e3	30	260
NSVIMD10AMT1G	Onsemi	NPN AND PNP	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES		.285 W	.5 A	PLASTIC/EPOXY		.3 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE			100	150 Cel		SILICON	50 V				MATTE TIN	DUAL	R-PDSO-G6	1					e3	30	260	AEC-Q101
PZT651T1G	Onsemi	NPN	SINGLE	YES	75 MHz	.8 W	2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	60 V				MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3	30	260
2N5087RLRA	Onsemi	PNP	SINGLE	NO	40 MHz	.35 W	.05 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		250	150 Cel		SILICON	50 V				TIN LEAD	BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92	e0		235
2N5087RLRAG	Onsemi	PNP	SINGLE	NO	40 MHz	.35 W	.05 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		250	150 Cel		SILICON	50 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92	e1		260
2SA1774T1G	Onsemi	PNP	SINGLE	YES	140 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		120	150 Cel		SILICON	50 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BSS64	Onsemi	NPN	SINGLE	YES	60 MHz	.35 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		20	150 Cel		SILICON	80 V				Tin (Sn)	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
KSD1616ALTA	Onsemi	NPN	SINGLE	NO	160 MHz	.75 W	1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		300	150 Cel		SILICON	60 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MPS8098	Onsemi	NPN	SINGLE	NO	150 MHz	.625 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		75	150 Cel		SILICON	60 V				Tin/Lead (Sn/Pb)	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e0	30	235
SMMBTA14LT1G	Onsemi	NPN	SINGLE	YES	125 MHz	.3 W	.3 A						1			Other Transistors		5000	150 Cel							MATTE TIN			1					e3	30	260
BC182AG	Onsemi	NPN	SINGLE	NO	200 MHz	.35 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		120	150 Cel		SILICON	50 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
BC817-40LT3	Onsemi	NPN	SINGLE	YES	100 MHz	.225 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		250	150 Cel		SILICON	45 V				TIN LEAD	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0		235
BC860BMTF	Onsemi	PNP	SINGLE	YES	150 MHz	.31 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	6 pF	SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE		e3	30	260
BCP56	Onsemi	NPN	SINGLE	YES		1 W	1.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	80 V				TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3	30	260
BCV26	Onsemi	PNP	DARLINGTON	YES	220 MHz	.3 W	1.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		20000	150 Cel		SILICON	30 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
FJN3302RTA	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	NO	250 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	BIP General Purpose Small Signal		30	150 Cel		SILICON	50 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 1	TO-92	e3
KSC1008YBU	Onsemi	NPN	SINGLE	NO	50 MHz	.8 W	.7 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		120	150 Cel		SILICON	60 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBT3904LT3	Onsemi	NPN	SINGLE	YES	300 MHz	.225 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
MUN5314DW1T1G	Onsemi	NPN AND PNP	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES		.15 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		80	150 Cel		SILICON	50 V				MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO 4.7		e3	30	260
NSV60601MZ4T1G	Onsemi	NPN	SINGLE	YES	100 MHz	2 W	6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	60 V	200 ns		1475 ns	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR			TO-261AA	e3	30	260	AEC-Q101
NSVBC846BM3T5G	Onsemi	NPN	SINGLE	YES	100 MHz	.64 W	.1 A						1			Other Transistors		200	150 Cel							MATTE TIN			1					e3	30	260
NSVT65010MW6T1G	Onsemi	PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.65 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE			220	150 Cel	4.5 pF	SILICON	65 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1					e3	30	260	AEC-Q101

Onsemi Small Signal Bipolar Junction Transistors (BJT) 2,400+

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