Onsemi - SMUN5214DW1T1G

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;

SBC807-25LT1G by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max VCEsat of 0.7V, min DC current gain (hFE) of 160, and max collector-emitter voltage of 45V. It is commonly used for switching applications in various industries.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): SMALL OUTLINE;

ULN2003AD by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications, it has a max VCE of 50V and comes in a small outline package style suitable for surface mount technology.

FMMT493TA by Diodes Inc. is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 1A, and min DC current gain of 20. With a package style of small outline and surface mount capability, it operates up to 150°C and has a transition frequency of 150MHz.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Package Body Material: METAL; Qualification: Not Qualified;

MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;

BC556BTF by Onsemi is a PNP BJT transistor with a max collector-emitter voltage of 65V and max current of 0.1A. With a min DC current gain of 200, it's ideal for switching applications at up to 150°C operating temperature in through-hole packages.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

Infineon Technologies' SMBTA06E6327HTSA1 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 100MHz. This surface-mount device in a small outline package suits compact designs.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE; Package Shape: ROUND;