STMicroelectronics - TSD4575

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 4 A; Case Connection: BASE;

1090MP by Microsemi is a NPN RF Power BJT with a max power dissipation of 250W. It operates in L Band frequencies and has a max collector current of 6.5A, making it ideal for amplifier applications in various industries. This transistor comes in a ceramic-metal sealed co-fired package with flat terminals, suitable for surface mount assembly.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79.5 W; Maximum Collector Current (IC): 4.8 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 34 W; Qualification: Not Qualified; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Terminal Form: FLAT; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1070 W; Maximum Collector Current (IC): 36 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 18 V; No. of Elements: 1;

RF Power Bipolar Transistors;

BLW77 by NXP Semiconductors is a single NPN RF Power BJT with a max power dissipation of 245W. It operates in the very high frequency band, with a max collector-emitter voltage of 35V and max collector current of 12A. Ideal for amplifier applications, this transistor has a nominal transition frequency of 320MHz and can withstand temperatures up to 200°C.

RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

Infineon's BDP950H6327XTSA1 is a PNP RF Power BJT with 60V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mount assembly.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 21.8 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 438 W; Maximum Collector Current (IC): 12 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.4 A; Package Style (Meter): FLANGE MOUNT; Maximum Collector-Emitter Voltage: 17 V;

RF Power Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 20 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Additional Features: WITH EMITTER BALLASTING RESISTORS;