STMicroelectronics - AM82731-006

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 3 A; Minimum Power Gain (Gp): 10 dB;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 850 MHz; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 7.7 A; Terminal Position: DUAL; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 583 W; Maximum Collector Current (IC): 12 A; No. of Terminals: 4;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .11 A; Package Shape: ROUND; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 530 MHz; Maximum Power Dissipation (Abs): 76 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Transistor Application: AMPLIFIER; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 8 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): 4 A; Package Style (Meter): POST/STUD MOUNT;

NXP Semiconductors' MX0912B251Y is an NPN RF Power BJT with 7 dB min power gain, suitable for L Band applications. It has a max power dissipation of 690 W and can operate at temperatures up to 200°C. The transistor is designed for amplifier configurations and features a flange mount package style.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 630 W; Maximum Collector Current (IC): 21 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): 3 A; Maximum Collector-Emitter Voltage: 22 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: SINGLE;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 280 W; Maximum Collector Current (IC): 12 A; Minimum Power Gain (Gp): 7 dB;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Package Shape: RECTANGULAR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

The NXP Semiconductors BLT50,115 is a RF Power BJT transistor with NPN polarity and single configuration. It features a min power gain of 10 dB, operates in the ultra high frequency band, and has a max power dissipation of 2 W. Ideal for amplifier applications, this transistor has a max operating temperature of 175°C and can handle a collector current of 0.5 A.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): 1.5 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2900 MHz; Maximum Collector Current (IC): .35 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;