Other Function Memory ICs | Vyrian

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
47L16-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		16384 bit	2.7 V		e3	40	260			4.4 mm	400 ns
FM33256B-G	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		32768 words			EEPROM+FLASH		8	SMALL OUTLINE	SOP14,.23			1.27 mm	85 Cel		32KX8	32K	-40 Cel	PURE TIN	DUAL		R-PDSO-G14	3	3.6 V	1.727 mm		3.8985 mm		262144 bit	2.7 V			30	260			8.6483 mm
MR25H10CDF	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		SYNCHRONOUS	27 mA	131072 words		3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified	1048576 bit	2.7 V		e3	30	260		.000115 Amp	6 mm
DS2411P	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS	.1 mA	64 words				2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm		3.76 mm	Not Qualified	64 bit	1.5 V		e0				.000001 Amp	3.94 mm
DS2411P+	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS	.1 mA	64 words				2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm		3.76 mm	Not Qualified	64 bit	1.5 V		e3	30	260		.000001 Amp	3.94 mm
MR25H256ACDF	Everspin Technologies	SPI BUS SERIAL EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		SYNCHRONOUS		32768 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm		262144 bit	2.7 V							6 mm
ST25DV04K-JFR6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		SYNCHRONOUS		4096 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		4KX1	4K	-40 Cel		DUAL		S-PDSO-N12		5.5 V	.6 mm		3 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			3 mm
47L16T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V		e3	40	260			4.9 mm	400 ns
ST25DV04K-IER6C3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		SYNCHRONOUS		4096 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		4KX1	4K	-40 Cel		DUAL		R-PDSO-N8		5.5 V	.6 mm		2 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			3 mm
DS1992L-F5	Maxim Integrated	MEMORY CIRCUIT	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		1024 words				3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs			70 Cel		1KX1	1K	-40 Cel		END		O-MEDB-N2		6 V				Not Qualified	1024 bit	2.8 V		e0	NOT SPECIFIED	NOT SPECIFIED				15000 ns
DS1992L-F5+	Analog Devices	MEMORY CIRCUIT	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		1024 words				3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs			70 Cel		1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed	END		O-MEDB-N2	1	6 V				Not Qualified	1024 bit	2.8 V		e3						15000 ns
WD10EZEX	Western Digital	MEMORY CIRCUIT			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED		ASYNCHRONOUS		1099511627776 words					8	MICROELECTRONIC ASSEMBLY					60 Cel		1TX8	1T	0 Cel		UNSPECIFIED		R-XXMA-X							8796093022208 bit
MR25H10MDF	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		SYNCHRONOUS		131072 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm		1048576 bit	3 V		e3	30	260			6 mm
FM33256B-GTR	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		32768 words			EEPROM+FLASH		8	SMALL OUTLINE	SOP14,.23			1.27 mm	85 Cel		32KX8	32K	-40 Cel	PURE TIN	DUAL		R-PDSO-G14	3	3.6 V	1.727 mm		3.8985 mm		262144 bit	2.7 V			30	260			8.6483 mm
THGBMDG5D1LBAIT	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL				4294967296 words					8	GRID ARRAY					85 Cel		4GX8	4G	-25 Cel		BOTTOM		R-PBGA-B153							34359738368 bit
EPCQ32ASI8N	Intel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words		3			8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm	100 MHz	3.9 mm		33554432 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	4.9 mm
MR2A16AYS35	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		262144 words		3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	70 Cel		256KX16	256K	0 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260		.028 Amp	18.41 mm	35 ns
CY8C20110-LDX2I	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	16	VQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD		SYNCHRONOUS		2048 words		3			1	CHIP CARRIER, VERY THIN PROFILE				.5 mm	85 Cel		2KX1	2K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	QUAD		S-XQCC-N16	3	5.25 V	.6 mm		3 mm	Not Qualified	2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260			3 mm
DS1992L-F5/E00	Analog Devices	MEMORY CIRCUIT
47L64-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		8192 words		3.3	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		8KX8	8K	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm		3.9 mm		65536 bit	2.7 V							4.9 mm	550 ns
MR0A16AYS35	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	155 mA	262144 words		3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	70 Cel		256KX16	256K	0 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260		.028 Amp	18.41 mm	35 ns
FM31256-GTR	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		32768 words		3			8	SMALL OUTLINE	SOP14,.25			1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN	DUAL		R-PDSO-G14	3	5.5 V	1.727 mm		3.8985 mm		262144 bit	2.7 V	0.9ms TAA available @400khz and 3ms TAA available @ 100 khz	e3					8.6483 mm	550 ns
DS2502X1+U	Analog Devices	OTP ROM	INDUSTRIAL	4			PLASTIC/EPOXY	YES							128 words	COMMON			3/5	8		BGA4,2X2,37/16	Other Memory ICs			85 Cel		128X8	128	-40 Cel	TIN SILVER COPPER NICKEL				1					Not Qualified	1024 bit			e2	30	260				15000 ns
47L16T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V		e3	40	260			4.9 mm	400 ns
MB85RS256BPNF-G-JNERE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	6 mA	32768 words		3.3		3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm		3.9 mm	Not Qualified	262144 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	5.05 mm
MR256A08BYS35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	70 Cel		32KX8	32K	0 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.007 Amp	18.41 mm	35 ns
MR256A08BYS35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	70 Cel		32KX8	32K	0 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.007 Amp	18.41 mm	35 ns
MR256A08BCMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	85 Cel		32KX8	32K	-40 Cel		BOTTOM		S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V						.007 Amp	8 mm	35 ns
MR256A08BCYS35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.007 Amp	18.41 mm	35 ns
MR256A08BSO35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs		1.25 mm	70 Cel		32KX8	32K	0 Cel		DUAL		R-PDSO-G32		3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.007 Amp	20.726 mm	35 ns
MT29F4G01ADAGDWB-IT:GTR	Micron Technology	MEMORY CIRCUIT																																											NOT SPECIFIED	NOT SPECIFIED
47C16-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		2048 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		16384 bit	4.5 V		e3	40	260			4.9 mm	400 ns
MR256A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	70 Cel		32KX8	32K	0 Cel		BOTTOM		S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.007 Amp	8 mm	35 ns
CY8C20110-SX2I	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		2048 words		3			1	SMALL OUTLINE				1.27 mm	85 Cel		2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	3	5.25 V	1.727 mm		3.9 mm	Not Qualified	2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	40	260			9.893 mm
DS2411P/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS	.1 mA	64 words				2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm		3.76 mm	Not Qualified	64 bit	1.5 V		e0				.000001 Amp	3.94 mm
DS2411P/TR	Dallas Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS	.1 mA	64 words				2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm		3.76 mm	Not Qualified	64 bit	1.5 V		e3	30	260		.000001 Amp	3.94 mm
DS2411P+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS	.1 mA	64 words				2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm		3.76 mm	Not Qualified	64 bit	1.5 V		e3	30	260		.000001 Amp	3.94 mm
MB85RS4MTYPF-G-BCERE1	Fujitsu
DS1994L-F5	Maxim Integrated	MEMORY CIRCUIT	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		4096 words		3		3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs			70 Cel		4KX1	4K	-40 Cel	TIN LEAD	END		O-MEDB-N2	1	6 V				Not Qualified	4096 bit	2.8 V		e0						15000 ns
DS1994L-F5+	Maxim Integrated	MEMORY CIRCUIT	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		4096 words		3		3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs			70 Cel		4KX1	4K	-40 Cel	MATTE TIN	END		O-MEDB-N2	1	6 V				Not Qualified	4096 bit	2.8 V		e3						15000 ns
47L16-E/P	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	IN-LINE	DIP8,.3			2.54 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm		7.62 mm		16384 bit	2.7 V		e3					9.271 mm	400 ns
47L16-I/P	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	IN-LINE	DIP8,.3			2.54 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm		7.62 mm		16384 bit	2.7 V		e3					9.271 mm	400 ns
S70KL1281DABHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words		3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm		6 mm		134217728 bit	2.7 V							8 mm
MR2A16ATS35C	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		262144 words		3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	70 Cel		256KX16	256K	0 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260		.028 Amp	18.41 mm	35 ns
S70KL1281DABHI023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words		3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm		6 mm		134217728 bit	2.7 V							8 mm
MR256A08BCMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	85 Cel		32KX8	32K	-40 Cel		BOTTOM		S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V						.007 Amp	8 mm	35 ns
MR256A08BCYS35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V						.007 Amp	18.41 mm	35 ns
MR256A08BMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	70 Cel		32KX8	32K	0 Cel		BOTTOM		S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.007 Amp	8 mm	35 ns