STMicroelectronics - SD1530-08

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Terminal Finish: GOLD;

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Transistor Element Material: SILICON; JESD-609 Code: e3;

RF Power Bipolar Transistors;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Collector Current (IC): .09 A; Case Connection: EMITTER;

NXP Semiconductors' MX0912B251Y is an NPN RF Power BJT with 7 dB min power gain, suitable for L Band applications. It has a max power dissipation of 690 W and can operate at temperatures up to 200°C. The transistor is designed for amplifier configurations and features a flange mount package style.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1100 MHz; Maximum Collector Current (IC): 3 A; No. of Terminals: 4;

NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; No. of Elements: 1; No. of Terminals: 2;

NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; No. of Terminals: 2;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7.6 W; Maximum Collector Current (IC): .5 A; Highest Frequency Band: C BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16.7 W; Maximum Collector Current (IC): .82 A; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7.6 W; Maximum Collector Current (IC): .5 A; Package Shape: ROUND;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 88.8 W; Maximum Collector Current (IC): 1.35 A; No. of Terminals: 4;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .45 A; JESD-30 Code: O-CRDB-F2; Case Connection: EMITTER;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 16 A; No. of Terminals: 4;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 1.75 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 3 A; Highest Frequency Band: L BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Qualification: Not Qualified; Additional Features: WITH EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 8 A; Case Connection: BASE;