NXP Semiconductors - LUE2003S

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: O-CRDB-F4; Terminal Position: RADIAL; No. of Terminals: 4;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 50 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 15;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 6 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 40 A; Highest Frequency Band: HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A;

RF Power Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; Highest Frequency Band: S BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4.2 A; Package Style (Meter): FLANGE MOUNT; Minimum Power Gain (Gp): 5.5 dB;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 280 W; Maximum Collector Current (IC): 9 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDFM-F2;

RF Power Bipolar Transistors; Terminal Finish: GOLD; JESD-609 Code: e4;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 53 W; Maximum Collector Current (IC): 2.4 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 310 W; Maximum Collector Current (IC): .4 A; Minimum DC Current Gain (hFE): 15;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; JESD-609 Code: e4; Highest Frequency Band: S BAND;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.5 W; Maximum Collector Current (IC): .4 A; Terminal Position: RADIAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 21 A; Transistor Element Material: SILICON; Additional Features: DIFFUSED EMITTER BALLASTING RESISTORS;

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Minimum Operating Temperature: -55 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 6.5 A; Maximum Collector-Base Capacitance: 50 pF;