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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLV31 |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1100 MHz; Maximum Collector Current (IC): 3 A; No. of Terminals: 4; |
| Datasheet | BLV31 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 15 dB |
| Nominal Transition Frequency (fT): | 1100 MHz |
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Collector Current (IC): | 3 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Polarity or Channel Type: | NPN |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 15 |
| No. of Terminals: | 4 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 30 V |
| Terminal Position: | RADIAL |
| Package Style (Meter): | DISK BUTTON |
| JESD-30 Code: | O-CRDB-F4 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | FLAT |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 200 Cel |
| Maximum Power Dissipation Ambient: | 48 W |
