Onsemi - SPS501C1

Photo Diodes; Maximum Dark Current: .001 nA; No. of Functions: 6; Configuration: SEPARATE, 6 ELEMENTS; Nominal Light Current: .008 mA; Size: 2.5 mm;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -30 Cel; Maximum Response Time: .0000000008 s; Semiconductor Material: Germanium;

AVALANCHE PHOTODIODE; Configuration: COMPLEX; Minimum Reverse Breakdown Voltage: 24.2 V; Maximum Dark Current: 12000 nA; Minimum Operating Temperature: -40 Cel; No. of Functions: 1;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: Silicon; Packing Method: TR; Additional Features: LOW NOISE; Size: 1 mm;

PIN PHOTODIODE; Maximum Dark Current: 30 nA; Maximum Operating Temperature: 85 Cel; Minimum Reverse Breakdown Voltage: 20 V; Peak Wavelength (nm): 1000; Infrared (IR) Range: YES;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .12 mA; Minimum Reverse Breakdown Voltage: 32 V; Configuration: SINGLE; Size: 8.13 mm;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 10 nA; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -30 Cel; Maximum Response Time: .00000012 s;

OP913WSL by Tt Electronics Plc is a single PIN photodiode with 8.13mm size, ideal for light detection applications. With a max operating temperature of 125°C and min reverse breakdown voltage of 32V, it offers fast response time of 0.00000005s and low dark current of 25nA for precise measurements in various environments.

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 10 nA; Minimum Operating Temperature: -20 Cel; Maximum Reverse Voltage: 30 V; Semiconductor Material: InGaAs;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: Silicon; Minimum Operating Temperature: -40 Cel; Shape: ROUND;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000003 s; JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel;

BPW34FASR18R by Osram Opto Semiconductors is a single PIN photodiode with peak wavelength of 880nm. It has a min reverse breakdown voltage of 16V and operates b/w -40°C to 100°C. Ideal for applications requiring infrared detection, it features a square shape and size of 2.65mm, with nominal light current of 0.023mA and max dark current of 30nA.

PIN PHOTODIODE;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .0000001 s;

Photo Diodes;

AVALANCHE PHOTODIODE;

PIN PHOTODIODE; Size: 3.15 mm; Shape: RECTANGULAR; No. of Functions: 1; Nominal Light Current: .045 mA; Maximum Dark Current: .002 nA;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: TIN OVER NICKEL; Semiconductor Material: Silicon; Packing Method: TR, 7 INCH; Maximum Reverse Voltage: 16 V;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Reverse Voltage: 32 V; Shape: RECTANGULAR; Semiconductor Material: Silicon;

PIN PHOTODIODE; Configuration: SINGLE; Shape: ROUND; Nominal Light Current: .027 mA; Minimum Reverse Breakdown Voltage: 60 V; Maximum Operating Temperature: 100 Cel;