Infineon Technologies - BPX60

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 420; Size: 1 mm; Semiconductor Material: Silicon; Minimum Reverse Breakdown Voltage: 24.2 V;

Photo Diodes; Shape: SQUARE; Size: 10 mm; No. of Functions: 1; Configuration: SINGLE;

Photo Diodes; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: Silicon; Peak Wavelength (nm): 420; Minimum Operating Temperature: -40 Cel; Additional Features: LOW NOISE;

BPW34FAS by Infineon Technologies is a PIN photodiode with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max dark current of 30nA and a max response time of 20ns. This photodiode is commonly used in applications such as light detection, optical communication, and industrial automation.

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Shape: RECTANGULAR; Maximum Reverse Voltage: 20 V; Minimum Operating Temperature: -40 Cel;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Size: 2.4 mm; Nominal Light Current: .035 mA; Minimum Reverse Breakdown Voltage: 60 V;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: Germanium; Maximum Reverse Voltage: 40 V; Maximum Dark Current: 200 nA;

AVALANCHE PHOTODIODE;

PIN PHOTODIODE; Size: 4.5 mm; Configuration: SINGLE; Maximum Dark Current: 30 nA; No. of Functions: 1; Nominal Light Current: .075 mA;

PIN PHOTODIODE;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000002 s; Semiconductor Material: Silicon; Maximum Dark Current: 10 nA; Maximum Operating Temperature: 100 Cel;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Size: 3.6 mm; Maximum Operating Temperature: 100 Cel; No. of Functions: 1; Infrared (IR) Range: YES;

PIN PHOTODIODE; Terminal Finish: Tin (Sn); Configuration: SINGLE; Nominal Light Current: .0016 mA; JESD-609 Code: e3; Shape: ROUND;

Photo Diodes;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00000002 s; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 80 Cel;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 5 nA; Maximum Operating Temperature: 100 Cel; Nominal Light Current: .027 mA; Peak Wavelength (nm): 960;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Configuration: SINGLE; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 635; Maximum Dark Current: 81 nA;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 85 Cel; Semiconductor Material: Germanium;

AVALANCHE PHOTODIODE;