Marktech Optoelectronics - MTPD1346D-100

AVALANCHE PHOTODIODE;

Photo Diodes; Peak Wavelength (nm): 840; Size: 2.5 mm; Additional Features: HIGH RELIABILITY; Maximum Dark Current: .001 nA; Configuration: SEPARATE, 6 ELEMENTS;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Reverse Voltage: 48 V; Maximum Dark Current: 500 nA; Semiconductor Material: Germanium;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000001 s; Configuration: SINGLE; Maximum Operating Temperature: 60 Cel; Additional Features: HIGH SENSITIVITY;

AVALANCHE PHOTODIODE;

MICROFC-30035-SMT-TR1 by Onsemi is a 3 mm square avalanche photodiode with a peak wavelength of 420 nm. It has a max operating temperature of 85°C and a min reverse breakdown voltage of 24.2 V. This photodiode is suitable for applications requiring high sensitivity in low light conditions, such as optical communication systems or medical imaging devices.

Photo Diodes;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 10 nA; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -30 Cel; Maximum Response Time: .00000012 s;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 10 V; Semiconductor Material: Silicon; Maximum Operating Temperature: 80 Cel; Maximum Dark Current: 2 nA;

AVALANCHE PHOTODIODE;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Voltage: 50 V; Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0;

Photo Diodes;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 20 V; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .0000000003 s; Semiconductor Material: InGaAs;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -40 Cel; Configuration: COMPLEX; Maximum Operating Temperature: 85 Cel; Minimum Reverse Breakdown Voltage: 24.2 V;

AVALANCHE PHOTODIODE; Peak Wavelength (nm): 420; Minimum Reverse Breakdown Voltage: 24.2 V; Maximum Dark Current: 3000 nA; Shape: SQUARE; Minimum Operating Temperature: -40 Cel;

PIN PHOTODIODE;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000005 s; Maximum Dark Current: 100 nA; Maximum Reverse Voltage: 180 V;

AVALANCHE PHOTODIODE;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 10 nA; Minimum Operating Temperature: -20 Cel; Maximum Reverse Voltage: 30 V; Semiconductor Material: InGaAs;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 100 Cel; Nominal Light Current: .001 mA; Infrared (IR) Range: YES; Additional Features: HIGH RELIABILITY;