NXP Semiconductors - AFT05MP075GNR1

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFM-F4;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 15 V; No. of Elements: 1; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; JESD-30 Code: R-CDFP-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Case Connection: SOURCE; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; Package Body Material: PLASTIC/EPOXY; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFP-F2;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (ID): 18 A; Qualification: Not Qualified;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Case Connection: SOURCE; Transistor Element Material: GALLIUM NITRIDE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;

N-CHANNEL; Maximum Power Dissipation (Abs): 625 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Maximum Drain Current (Abs) (ID): 7 A; Maximum Operating Temperature: 165 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-609 Code: e3;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Style (Meter): FLATPACK; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; Package Shape: RECTANGULAR; JESD-30 Code: R-XUUC-N3;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;