Ampleon Netherlands B V - ART700FHU

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1; Minimum DS Breakdown Voltage: 104 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; No. of Terminals: 4;

GS61008P-TR by Gan Systems is an N-channel RF FET for switching applications. It operates in enhancement mode with a max drain current of 90A. With GaN element material, it offers high frequency band performance suitable for very high frequency applications.

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 236 W; Maximum Drain Current (Abs) (ID): 14 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Transistor Element Material: GALLIUM ARSENIDE; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; No. of Terminals: 2; Maximum Drain Current (ID): 1 A;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Terminal Form: GULL WING; Transistor Application: AMPLIFIER;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 3; Package Shape: RECTANGULAR; Terminal Position: DUAL;

N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Drain Current (ID): 18 A; No. of Elements: 2; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;

RF Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;