Triquint Semiconductor - TGF2023-2-02

  1. Home
  2. Triquint Semiconductor - TGF2023-2-02
TGF2023-2-02 by Triquint Semiconductor

Image shown is a representation only.

Manufacturer Triquint Semiconductor
Manufacturer's Part Number TGF2023-2-02
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; Package Shape: RECTANGULAR; JESD-30 Code: R-XUUC-N3;
Datasheet TGF2023-2-02 Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: GALLIUM NITRIDE
Field Effect Transistor Technology: HIGH ELECTRON MOBILITY
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 2.5 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Nickel/Gold (Ni/Au)
JESD-609 Code: e4
No. of Terminals: 3
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: DEPLETION MODE
Highest Frequency Band: KU BAND
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

A5G26H110N-2496 by NXP Semiconductors

A5G26H110N-2496

NXP Semiconductors

RF Power Field-Effect Transistors;
MRF171A by New Jersey Semiconductor Products

MRF171A

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Elements: 1; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
ST05250 by STMicroelectronics

ST05250

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Terminal Position: DUAL; Package Shape: RECTANGULAR;
BLP15H9S100GZ by Ampleon Netherlands B V

BLP15H9S100GZ

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
2SK3075(TE12L,Q) by Toshiba

2SK3075(TE12L,Q)

Toshiba

RF Power Field-Effect Transistors;
AFT09S200W02GNR3 by NXP Semiconductors

AFT09S200W02GNR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Terminal Finish: TIN;
MRF300AN-13MHZ by NXP Semiconductors

MRF300AN-13MHZ

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
PD85025TR-E by STMicroelectronics

PD85025TR-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Terminal Finish: MATTE TIN; Package Shape: RECTANGULAR;
PTVA101K02EVP1 by Infineon Technologies

PTVA101K02EVP1

Infineon Technologies

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: SILICON;
SD60030 by STMicroelectronics

SD60030

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: FLAT; JESD-30 Code: R-PDFM-F2;
BLF861A by NXP Semiconductors

BLF861A

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE;
A2T26H300-24SR6 by Freescale Semiconductor

A2T26H300-24SR6

Freescale Semiconductor

RF Power Field-Effect Transistors;
LET20045C by STMicroelectronics

LET20045C

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; JESD-30 Code: R-PDFM-F2; Package Style (Meter): FLANGE MOUNT;
MRF1517NT1 by Freescale Semiconductor

MRF1517NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;
MRF6S20010GNR1 by NXP Semiconductors

MRF6S20010GNR1

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 68 V; Package Style (Meter): FLANGE MOUNT;
PD84008-E by STMicroelectronics

PD84008-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Drain Current (ID): 7 A; Maximum Operating Temperature: 165 Cel;
MRF136 by Motorola

MRF136

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 200 Cel; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;
SD2933 by STMicroelectronics

SD2933

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 648 W; Maximum Drain Current (Abs) (ID): 40 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
CGH31240F by Wolfspeed

CGH31240F

Wolfspeed

CGH31240F by Wolfspeed is a N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, featuring Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, it comes in a ceramic, metal-sealed co-fired package with flange mount style.
TIM0910-15L by Toshiba

TIM0910-15L

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; No. of Elements: 1; Maximum Power Dissipation Ambient: 60 W;