Fujitsu Semiconductor America - FLL177ME

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36.5 W; Package Shape: RECTANGULAR; No. of Terminals: 2;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Minimum DS Breakdown Voltage: 125 V; No. of Elements: 1;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; Case Connection: SOURCE;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; No. of Elements: 2;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Additional Features: HIGH RELIABILITY; Highest Frequency Band: L BAND; Minimum DS Breakdown Voltage: 15 V;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Operating Mode: DEPLETION MODE;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Surface Mount: YES; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE; Terminal Position: QUAD; Terminal Finish: MATTE TIN;

NXP Semiconductors' MRFE6VP6300HR3 is an N-CHANNEL RF Power FET with 130V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. The package is RECTANGULAR and METAL-OXIDE SEMICONDUCTOR technology is used, with a max operating temperature of 225°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Maximum Drain Current (Abs) (ID): 7 A; Maximum Operating Temperature: 165 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;

GS61008P-MR by Gan Systems is an N-CHANNEL FET for SWITCHING applications. It operates in ENHANCEMENT MODE with a 100V DS Breakdown Voltage and 90A ID. Utilizes GALLIUM NITRIDE technology, suitable for VERY HIGH FREQUENCY BAND operations.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Reference Standard: IEC-60134; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Drain Current (ID): 5 A; No. of Terminals: 5;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 690 W; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40;