Freescale Semiconductor - MMRF1014NT1

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Operating Temperature: 85 Cel; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Form: FLAT; Minimum DS Breakdown Voltage: 60 V;

RF Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 625 W; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 182 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Transistor Application: AMPLIFIER; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 7 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.7 W; No. of Terminals: 2; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Highest Frequency Band: S BAND; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Maximum Drain Current (ID): 7 A; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Package Shape: RECTANGULAR; Case Connection: SOURCE;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Package Style (Meter): FLATPACK; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 15 V; Terminal Position: QUAD;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PDSO-F2;

GS61008P-MR by Gan Systems is an N-CHANNEL FET for SWITCHING applications. It operates in ENHANCEMENT MODE with a 100V DS Breakdown Voltage and 90A ID. Utilizes GALLIUM NITRIDE technology, suitable for VERY HIGH FREQUENCY BAND operations.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 200 Cel; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;

RF Power Field-Effect Transistors;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;