Small Signal Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NTS4101PT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.329 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.37 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.12 ohm	1.37 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	85 pF
MMBF170Q-13-F	Diodes Incorporated																							MATTE TIN										e3		260
FDN337N-F169	Onsemi																							Matte Tin (Sn)										e3
SMMBFJ177LT1G	Onsemi																SMALL OUTLINE							MATTE TIN	300 ohm				1					e3	30	260
BSS138NH6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.23 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	.36 W	150 Cel	SILICON	-55 Cel	MATTE TIN	3.5 ohm	.23 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260	3.8 pF	AEC-Q101; IEC-61249-2-21
BSS138WQ-7-F	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.2 W	150 Cel	SILICON	-55 Cel		3.5 ohm	.2 A	DUAL	R-PDSO-G3									8 pF	AEC-Q101; UL RECOGNIZED
BSS138W-TP	Micro Commercial Components	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.3 W	150 Cel	SILICON	-55 Cel	MATTE TIN	6 ohm	.22 A	DUAL	R-PDSO-G3	1					e3	10	260	6 pF
NTJD5121NT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.266 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			.295 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.6 ohm	.295 A	DUAL	R-PDSO-G6	1		Not Qualified	LOW THRESHOLD		e3	30	260
BSS123LT7G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	6 ohm	.17 A	DUAL	R-PDSO-G3	1				TO-236	e3	NOT SPECIFIED	NOT SPECIFIED
FDG6301N	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2				6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	4 ohm	.22 A	DUAL	R-PDSO-G6	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
BSP171PH6327XTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.9 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.3 ohm	1.9 A	DUAL	R-PDSO-G4	1	DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3			55 pF	AEC-Q101
BSS138WT106	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		3 ohm	.31 A	DUAL	R-PDSO-G3									2 pF
DMP10H4D2S-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	-55 Cel	MATTE TIN	4.2 ohm	.27 A	DUAL	R-PDSO-G3				HIGH RELIABILITY		e3		260		AEC-Q101
DMG1029SV-7	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2			.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	1.7 ohm	.37 A	DUAL	R-PDSO-F6	1			HIGH RELIABILITY, LOW THRESHOLD		e3	30	260	5 pF
NTR2101PT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.96 W	PLASTIC/EPOXY	SWITCHING	8 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3.7 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn) - annealed	.052 ohm	3.7 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
2N7000_D74Z	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1			.2 A	3	CYLINDRICAL	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	5 ohm	.2 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1			5 pF
2N7000-D74Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1			.2 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	5 ohm	.2 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3			5 pF
2N7000/D74Z	National Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1				3	CYLINDRICAL		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		5 ohm	.2 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92				5 pF
NTJD4001NT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	.272 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			.25 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	2.5 ohm	.25 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260	12 pF
MMBF170-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.5 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	5 ohm	.5 A	DUAL	R-PDSO-G3			Not Qualified			e0			5 pF
BSH103,215	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.9 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.5 ohm	.85 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
FDV302PD87Z	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.12 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			10 ohm	.12 A	DUAL	R-PDSO-G3			Not Qualified	LOGIC LEVEL COMPATIBLE
BSS316NH6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	.16 ohm	1.4 A	DUAL	R-PDSO-G3	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3			7 pF
SI2323DDS-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.039 ohm	5.3 A	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	120 pF
MMBF4117	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	DEPLETION MODE	1				3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		TIN			DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	1.5 pF
2N7002CK,215	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.3 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	1.6 ohm	.3 A	DUAL	R-PDSO-G3	1			LOGIC LEVEL COMPATIBLE	TO-236AB	e3	30	260	7.5 pF	IEC-60134
BSS138PW	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		Tin (Sn)	1.6 ohm	.32 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
NTR4171PT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			2.2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn) - annealed	.075 ohm	2.2 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED
ZXMP4A16GTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.9 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			4.6 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.06 ohm	4.6 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260		AEC-Q101
IRLML6302TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.54 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.78 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	.54 W	150 Cel	SILICON	-55 Cel	MATTE TIN	.6 ohm	.78 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260	28 pF
FDS4675_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			11 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.013 ohm	11 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FDS4675-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			11 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		NICKEL PALLADIUM GOLD SILVER	.013 ohm	11 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	30	260
L2N7002WT1G	Leshan Radio	N-CHANNEL	SINGLE	YES	.3 W							1			.115 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.115 A
BSS138WQ-13-F	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.2 W	150 Cel	SILICON	-55 Cel		3.5 ohm	.2 A	DUAL	R-PDSO-G3									8 pF	AEC-Q101; UL RECOGNIZED
2N7002T-7-F	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.15 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.115 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	13.5 ohm	.115 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260	5 pF
IRLL110TRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	50 mJ	1.5 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn)	.76 ohm	1.5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-261AA	e3	30	260	15 pF
BSN20-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.92 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.5 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.8 ohm	.5 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260	10 pF	AEC-Q101
IRLML2803TRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.54 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.25 ohm	1.2 A	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260
FDC6327C	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.96 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			2.7 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.08 ohm	2.7 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
FDN86265P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.8 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn) - annealed	1.2 ohm	.8 A	DUAL	R-PDSO-G3	1					e3	NOT SPECIFIED	260	5 pF
BSS123LT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.17 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	6 ohm	.17 A	DUAL	R-PDSO-G3			Not Qualified		TO-236	e3		260
SI9926CDY-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			8 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.018 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
ZXM61N02FTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.806 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.7 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.18 ohm	1.7 A	DUAL	R-PDSO-G3	1		Not Qualified	LOW THRESHOLD		e3	30	260
BS170-D27Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	.83 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1			.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	5 ohm	.5 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3			10 pF
BS170_D27Z	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	.83 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1			.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN SILVER COPPER	5 ohm	.5 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1			10 pF
BS170/D27Z	National Semiconductor	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		60 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1				3	CYLINDRICAL		METAL-OXIDE SEMICONDUCTOR			SILICON			5 ohm	.5 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92
SI2305CDS-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	8 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			5.8 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.035 ohm	5.8 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260	300 pF
ZVN3310FTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.25 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.1 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	10 ohm	.1 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	5 pF

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.