Small Signal Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDC6506P	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.96 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			1.8 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Tin (Sn)	.17 ohm	1.8 A	DUAL	R-PDSO-G6	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
2N7002P,235	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	1.6 ohm	.36 A	DUAL	R-PDSO-G3	1			LOGIC LEVEL COMPATIBLE	TO-236AB	e3				AEC-Q101
BSN20BKR	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			3.2 ohm	.265 A	DUAL	R-PDSO-G3				LOGIC LEVEL COMPATIBLE	TO-236AB		NOT SPECIFIED	NOT SPECIFIED	7 pF	IEC-60134
ZVP3310FTA	Diodes Incorporated	P-CHANNEL	SINGLE	YES	.33 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.33 W	150 Cel	SILICON	-55 Cel	MATTE TIN	20 ohm	.075 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	5 pF
MGSF1N02LT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.75 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.09 ohm	.75 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
SI9945BDY-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			5.3 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.058 ohm	5.3 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
AO3401L	Alpha & Omega Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.05 ohm	4.2 A	DUAL	R-PDSO-G3					TO-236				77 pF
BSS138BKVL	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	1.6 ohm	.36 A	DUAL	R-PDSO-G3	1			LOGIC LEVEL COMPATIBLE	TO-236AB	e3	30	260		AEC-Q101; IEC-60134
PMV65XP,215	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.92 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3.9 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.076 ohm	3.9 A	DUAL	R-PDSO-G3	1		Not Qualified	LOW THRESHOLD	TO-236AB	e3	30	260
BSS138BK	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	1.6 ohm	.36 A	DUAL	R-PDSO-G3	1			LOGIC LEVEL COMPATIBLE	TO-236AB	e3
2N7002KQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.54 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.38 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	2 ohm	.3 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260	5 pF
BSS138BKT116	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	-55 Cel	TIN	.81 ohm	.4 A	DUAL	R-PDSO-G3						e3
2N7002KW_R1_00001	Panjit International	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			3 ohm	.115 A	DUAL	R-PDSO-G3				ULTRA LOW RESISTANCE			NOT SPECIFIED	NOT SPECIFIED	5 pF
BSS123-G	Onsemi																							Matte Tin (Sn) - annealed					1					e3	30	260
BSS123G	Changzhou Galaxy Century Microelectronics
NX3008NBKS,115	NXP Semiconductors	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.445 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			.35 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-50 Cel	TIN	1.4 ohm	.35 A	DUAL	R-PDSO-G6	1					e3	30	260		AEC-Q101; IEC-60134
SI2329DS-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	8 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			6 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.03 ohm	6 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BSS83PL6327HTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			2 ohm	.33 A	DUAL	R-PDSO-G3				AVALANCHE RATED, LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED	9 pF	AEC-Q101
DMN6075S-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.15 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.085 ohm	2 A	DUAL	R-PDSO-G3	1					e3	30	260
ZVN2110A	Diodes Incorporated	N-CHANNEL	SINGLE	NO	.7 W	PLASTIC/EPOXY		100 V	WIRE	ROUND	ENHANCEMENT MODE	1			.32 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	4 ohm	.32 A	SINGLE	O-PSIP-W3			Not Qualified			e3	30	260	8 pF
BSS138BKAHZGT116	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	.81 ohm	.4 A	DUAL	R-PDSO-G3	1					e3	10	260	5 pF	AEC-Q101
FDV302P_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.12 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	10 ohm	.12 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260
ZXM61N03FTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.625 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.4 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.22 ohm	1.4 A	DUAL	R-PDSO-G3	1		Not Qualified	LOW THRESHOLD		e3	30	260
2N7002BKM,315	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.7 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1			.45 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	1.6 ohm	.45 A	BOTTOM	R-PBCC-N3	1	DRAIN		LOGIC LEVEL COMPATIBLE		e3	30	260		AEC-Q101; IEC-60134
BSS83PL6327XT	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	2 ohm	.33 A	DUAL	R-PDSO-G3			Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	40	260	9 pF
ZXMS6004FFQTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-40 Cel	MATTE TIN	.6 ohm		DUAL	R-PDSO-F3	1			HIGH RELIABILITY		e3		260		AEC-Q101
BSS806NH6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.3 A	10.8 mJ	2.3 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	.057 ohm	2.3 A	DUAL	R-PDSO-G3	1			AVALANCHE RATED		e3			29 pF	AEC-Q101
BSS315PH6327XTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	.15 ohm	1.5 A	DUAL	R-PDSO-G3	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3			84 pF
LND150N3	Supertex	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	ROUND	DEPLETION MODE	1				3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1 W	150 Cel	SILICON		TIN LEAD	1000 ohm	.03 A	BOTTOM	O-PBCY-T3	1		Not Qualified	HIGH INPUT IMPEDANCE	TO-92	e0	40	260	1 pF
DN3135K1-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	350 V	GULL WING	RECTANGULAR	DEPLETION MODE	1				3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	.36 W	150 Cel	SILICON	-55 Cel	MATTE TIN	35 ohm	.072 A	DUAL	R-PDSO-G3	1		Not Qualified	LOW THRESHOLD	TO-236AB	e3			10 pF	TS 16949
FDG6332C_NL	Fairchild Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			.6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.3 ohm	.7 A	DUAL	R-PDSO-G6	1		Not Qualified			e3
IRLML2803GTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.54 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.25 ohm	1.2 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY	TO-236AB	e3	30	260
ZXMN10A07FTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.806 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.56 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.7 ohm	.7 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BSS223PWH6327XTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	1.2 ohm	.39 A	DUAL	R-PDSO-G3	1			LOGIC LEVEL COMPATIBLE, AVALANCHE RATED		e3			22 pF
S2N7002ET1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	2.5 ohm	.26 A	DUAL	R-PDSO-G3	1				TO-236	e3	10	260		AEC-Q101
SI2328DS-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.73 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.15 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.25 ohm	1.15 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
FDS6912A	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.028 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
SI4459ADY-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	7.8 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			29 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.005 ohm	29 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260
IRLML2502GTRPBF	Infineon Technologies												33 A		4.2 A			FET General Purpose Power						MATTE TIN					1		Not Qualified			e3	30	260
BSS123_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.17 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	10 ohm	.17 A	DUAL	R-PDSO-G3	1		Not Qualified			e3			6 pF
BSL215CH6327XTSA1	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2				6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.5 W	150 Cel	SILICON	-55 Cel	TIN	.14 ohm	1.5 A	DUAL	R-PDSO-G6	1			AVALANCHE RATED		e3			9 pF	AEC-Q101
BSS83PH6327	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.33 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	3 ohm	.33 A	DUAL	R-PDSO-G3			Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3			9 pF
SI2302CDS-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.86 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			2.6 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.057 ohm	2.6 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC548B	Texas Instruments	NPN	SINGLE	NO								1						Other Transistors			150 Cel
DMP6023LFG-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1				5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	.025 ohm	7.7 A	DUAL	S-PDSO-N5	1	DRAIN		HIGH RELIABILITY		e3	30	260		AEC-Q101
NX3008PBK,215	NXP Semiconductors	P-CHANNEL	SINGLE	YES	.42 W							1			.23 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel			TIN		.23 A			1					e3	30	260
SN7002WH6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	5 ohm	.23 A	DUAL	R-PDSO-G3	1					e3			4.5 pF	AEC-Q101
MMBF4393LT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	100 ohm		DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260	3.5 pF

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.