Small Signal Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BSS123L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		Matte Tin (Sn) - annealed	10 ohm	.17 A	DUAL	R-PDSO-G3	1			TO-236AB	e3	30	260
IRLML2803TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.54 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		1.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	.25 ohm	1.2 A	DUAL	R-PDSO-G3	1	Not Qualified	HIGH RELIABILITY	TO-236AB	e3	30	260
BSS84PWH6327XTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	8 ohm	.15 A	DUAL	R-PDSO-G3	1		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3			3.8 pF
ZXMP6A13FTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.625 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		1.1 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.4 ohm	.9 A	DUAL	R-PDSO-G3	1	Not Qualified	LOW THRESHOLD		e3	30	260
BSS131H6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY		240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	14 ohm	.11 A	DUAL	R-PDSO-G3	1		LOGIC LEVEL COMPATIBLE		e3	30	260	4.2 pF	AEC-Q101
FDN340P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	.5 W	150 Cel	SILICON	-55 Cel	MATTE TIN	70 ohm	2 A	DUAL	R-PDSO-G3	1	Not Qualified			e3	30	260	56 pF
SI2319CDS-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		4.4 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.077 ohm	4.4 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236	e3	30	260
2N7002KQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.54 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.38 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	2 ohm	.3 A	DUAL	R-PDSO-G3	1		HIGH RELIABILITY		e3	30	260	5 pF
2N7002/HAMR	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.83 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-65 Cel	TIN	5 ohm	.3 A	DUAL	R-PDSO-G3	1			TO-236AB	e3	30	260	10 pF	IEC-60134
2N7002H6327XTSA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	3 ohm	.3 A	DUAL	R-PDSO-G3	1	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3			3 pF
BSS84AK,215	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.14 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.18 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	8.5 ohm	.18 A	DUAL	R-PDSO-G3	1		LOGIC LEVEL COMPATIBLE	TO-236AB	e3	30	260		AEC-Q101; IEC-60134
BSS123IXTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		6 ohm	.19 A	DUAL	R-PDSO-G3								1.6 pF
AO3401A	Alpha & Omega Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.4 W	150 Cel	SILICON	-55 Cel		.05 ohm	4 A	DUAL	R-PDSO-G3						NOT SPECIFIED	NOT SPECIFIED
FDS5670	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.014 ohm	10 A	DUAL	R-PDSO-G8	1	Not Qualified			e3	30	260
FDN304P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		2.4 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.052 ohm	2.4 A	DUAL	R-PDSO-G3	1	Not Qualified			e3	30	260
NTR4101PT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.73 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		1.8 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.085 ohm	1.8 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236	e3	30	260	75 pF
SBSS84LT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.13 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn) - annealed	10 ohm	.13 A	DUAL	R-PDSO-G3	1			TO-236	e3	NOT SPECIFIED	NOT SPECIFIED
FDC658AP	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.6 W	150 Cel	SILICON	-55 Cel	MATTE TIN	.05 ohm	4 A	DUAL	R-PDSO-G6	1	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260	90 pF
BSS123NH6433XTMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			6 ohm	.19 A	DUAL	R-PDSO-G3			LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED	3.1 pF	AEC-Q101
BSS84	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.25 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.13 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	10 ohm	.13 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236AB	e3	30	260	12 pF
BSS84AKW,115	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.31 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.15 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	8.5 ohm	.15 A	DUAL	R-PDSO-G3	1		LOGIC LEVEL COMPATIBLE		e3	30	260		AEC-Q101; IEC-60134
FDC5612	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		4.3 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.055 ohm	4.3 A	DUAL	R-PDSO-G6	1	Not Qualified			e3	30	260
BSS84DW-7-F	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		.13 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	10 ohm	.13 A	DUAL	R-PDSO-G6	1	Not Qualified			e3	30	260	12 pF
IRLML2402TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.54 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		1.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.25 ohm	1.2 A	DUAL	R-PDSO-G3	1	Not Qualified	HIGH RELIABILITY	TO-236AB	e3	30	260
IRLML2502TRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		4.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.25 W	150 Cel	SILICON	-55 Cel		.045 ohm	4.2 A	DUAL	R-PDSO-G3	1			TO-236AB				66 pF
2N7002K-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.35 W	150 Cel	SILICON	-55 Cel	MATTE TIN	4 ohm	.3 A	DUAL	R-PDSO-G3	1	Not Qualified	LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING	TO-236AB	e3	30	260
2N7002KT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.32 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	1.6 ohm	.32 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236	e3	40	260	5 pF
LBSS123LT1G	Leshan Radio	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.17 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			6 ohm	.17 A	DUAL	R-PDSO-G3						NOT SPECIFIED	NOT SPECIFIED
BSS138WH6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.5 W	150 Cel	SILICON	-55 Cel	TIN	3.5 ohm	.28 A	DUAL	R-PDSO-G3	1				e3	30	260	4.2 pF	AEC-Q101
NDS7002A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.28 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-65 Cel	Matte Tin (Sn) - annealed	2 ohm	.28 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	5 pF
FDN335N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		1.7 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.07 ohm	1.7 A	DUAL	R-PDSO-G3	1	Not Qualified			e3	30	260
FDS9945	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		3.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.1 ohm	3.5 A	DUAL	R-PDSO-G8	1	Not Qualified			e3	30	260
FDV302P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.12 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	10 ohm	.12 A	DUAL	R-PDSO-G3	1	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
BSS84-TP	Micro Commercial Components							50 V															MATTE TIN		.13 A			1				e3	10	260
2N7002WT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	.33 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.31 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.6 ohm	.31 A	DUAL	R-PDSO-G3	1	Not Qualified			e3	30	260
2N7000	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1		.2 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	5 ohm	.2 A	BOTTOM	O-PBCY-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-92	e3	30	240	5 pF
SI2309CDS-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		1.6 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.345 ohm	1.6 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236AB	e3	30	260	20 pF
BSS138NH6433XTMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.36 W	150 Cel	SILICON	-55 Cel	MATTE TIN	3.5 ohm	.23 A	DUAL	R-PDSO-G3	1		LOGIC LEVEL COMPATIBLE		e3	30	260	3.8 pF	AEC-Q101; IEC-61249-2-21
ZVP2106A	Diodes Incorporated	P-CHANNEL	SINGLE	NO	.7 W	PLASTIC/EPOXY		60 V	WIRE	ROUND	ENHANCEMENT MODE	1		.28 A	3	CYLINDRICAL	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	5 ohm	.28 A	BOTTOM	O-PBCY-W3	1	Not Qualified			e3	30	260	20 pF
ZXMN6A07FTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.806 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.93 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.3 ohm	1.1 A	DUAL	R-PDSO-G3	1	Not Qualified			e3	30	260
2N7002K-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.35 W	150 Cel	SILICON	-55 Cel	MATTE TIN	4 ohm	.3 A	DUAL	R-PDSO-G3	1	Not Qualified	LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING	TO-236AB	e3	30	260
BSS308PEH6327XTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	.08 ohm	2 A	DUAL	R-PDSO-G3	1	Not Qualified	LOGIC LEVEL COMPATIBLE		e3			18 pF
IRLML6344TRPBF	Infineon Technologies												25 A	5 A			FET General Purpose Power						MATTE TIN					1	Not Qualified			e3	30	260
MMBF170	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.5 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	5 ohm	.5 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236AB	e3	30	260	10 pF
BSD316SNH6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.5 W	150 Cel	SILICON	-55 Cel	TIN	.0016 ohm	1.4 A	DUAL	R-PDSO-G6	1		AVALANCHE RATED		e3			7 pF	AEC-Q101
ZXMP10A13FTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.625 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.7 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1 ohm	.7 A	DUAL	R-PDSO-G3	1	Not Qualified			e3	30	260
IRLML6402TRPBF-1	Infineon Technologies	P-CHANNEL	SINGLE	YES	1.3 W							1		4.3 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel			MATTE TIN		4.3 A			1				e3	30	260
BSS84PH6433XTMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.17 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	8 ohm	.17 A	DUAL	R-PDSO-G3			LOGIC LEVEL COMPATIBLE, AVALANCHE RATED		e3			3 pF	AEC-Q101

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.