Small Signal Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NTJD1155LT1G	Onsemi	N-CHANNEL AND P-CHANNEL	COMPLEX	YES	.4 W	PLASTIC/EPOXY	SWITCHING	8 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			1.3 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.175 ohm	1.3 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
SI2319DDS-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.075 ohm	3.6 A	DUAL	R-PDSO-G3					TO-236AB		NOT SPECIFIED	NOT SPECIFIED	43 pF
BSS139IXTSA1	Infineon Technologies
SI2371EDS-T1-BE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.045 ohm	4.8 A	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260
2V7002WT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	.33 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.31 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.6 ohm	.31 A	DUAL	R-PDSO-G3	1					e3	30	260		AEC-Q101
MMBFJ112	Onsemi	N-CHANNEL	SINGLE	YES	.35 W	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	DEPLETION MODE	1				3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON				Tin (Sn)	50 ohm		DUAL	R-PDSO-G3	1		Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED	5 pF
BSS306NH6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.057 ohm	2.3 A	DUAL	R-PDSO-G3	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3			17 pF
BSS215PH6327XTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.15 ohm	1.5 A	DUAL	R-PDSO-G3	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3			128 pF
DMP4047LFDE-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1			6 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.033 ohm	3.3 A	DUAL	S-PDSO-N3	1	DRAIN		HIGH RELIABILITY		e4	30	260		AEC-Q101
SI2315BDS-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.75 W	PLASTIC/EPOXY		12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			2.8 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	3 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260	200 pF
FDMC8030	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	14 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	50 A	21 mJ	12 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	14 W	150 Cel	SILICON	23 ns	-55 Cel	43 ns	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)	.01 ohm	12 A	DUAL	S-PDSO-N4	1	DRAIN		AVALANCHE RATED		e4	NOT SPECIFIED	NOT SPECIFIED	30 pF
NTA4001NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	.3 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.238 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3.5 ohm	.238 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	6 pF
2N7002KW-TP	Micro Commercial Components	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.34 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	5.3 ohm	.34 A	DUAL	R-PDSO-G3	1					e3	10	260	10 pF
BSS131L6327HTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY		240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			14 ohm	.11 A	DUAL	R-PDSO-G3				LOGIC LEVEL COMPATIBLE					4.2 pF	AEC-Q101
SI2342DS-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	8 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	6 A	DUAL	R-PDSO-G3	1				TO-236AB			260	200 pF
ZXMP3A16GTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.9 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			5.4 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.045 ohm	5.4 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOW THRESHOLD		e3	30	260
NTK3134NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	.55 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1			.89 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.35 ohm	.89 A	DUAL	R-PDSO-F3	1		Not Qualified			e3	30	260	15 pF
TN2404K-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.2 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	.36 W	150 Cel	SILICON		-55 Cel		MATTE TIN	4 ohm	.2 A	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260
FDS4672A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.013 ohm	11 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
SI1902CDL-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.42 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			1.1 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.235 ohm	1.1 A	DUAL	R-PDSO-G6	1					e3	30	260
FDC604P_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			5.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.031 ohm	5.5 A	DUAL	R-PDSO-G6	1		Not Qualified			e3
SI4564DY-T1-GE3	Vishay Intertechnology	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			10 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.0175 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	40	260
SI2323DS-T1	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3.7 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.039 ohm	3.7 A	DUAL	R-PDSO-G3					TO-236AB				140 pF
TP0610K-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.185 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	6 ohm	.185 A	DUAL	R-PDSO-G3	1		Not Qualified	ESD PROTECTION, LOW THRESHOLD	TO-236	e3	20	260
DMG2302UK-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.09 ohm	2.8 A	DUAL	R-PDSO-G3	1					e3	30	260	18 pF
LND150N8	Supertex	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1 W	PLASTIC/EPOXY	SWITCHING	500 V	FLAT	RECTANGULAR	DEPLETION MODE	1				3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1000 ohm	.03 A	SINGLE	R-PSSO-F3		SOURCE	Not Qualified	HIGH INPUT IMPEDANCE	TO-243AA	e0			1 pF
BSS131	NXP Semiconductors	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					16 ohm	.1 A	DUAL	R-PDSO-G3			Not Qualified
NTZD5110NT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.25 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2			.294 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.6 ohm	.294 A	DUAL	R-PDSO-F6	1		Not Qualified			e3	30	260
SI2399DS-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			6 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.034 ohm	6 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260	155 pF
FDY300NZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.625 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1			.6 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.7 ohm	.6 A	DUAL	R-PDSO-F3	1		Not Qualified	ESD PROTECTION		e3	30	260
FDG8850NZ	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			.75 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.4 ohm	.75 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260	25 pF
SQ2364EES-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Tin (Sn)	.245 ohm	2 A	DUAL	R-PDSO-G3					TO-236AB	e3			19 pF	AEC-Q101
SI4925DDY-T1-GE3	Vishay Intertechnology	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.029 ohm	8 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260
BSS169H6327XT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	DEPLETION MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	12 ohm	.17 A	DUAL	R-PDSO-G3	1					e3	30	260	7 pF	AEC-Q101
FDY4000CZ	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.625 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2			.6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.7 ohm	.6 A	DUAL	R-PDSO-F6	1		Not Qualified	ESD PROTECTED		e3	30	260
IRF6216TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.24 ohm	2.2 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260
ZVN2110ASTZ	Diodes Incorporated	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	100 V	WIRE	RECTANGULAR	ENHANCEMENT MODE	1				3	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	4 ohm	.32 A	SINGLE	R-PSIP-W3			Not Qualified			e3	30	260
SI2307CDS-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3.5 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.088 ohm	3.5 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BSH205G2R	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.17 ohm	2 A	DUAL	R-PDSO-G3					TO-236AB		NOT SPECIFIED	NOT SPECIFIED		AEC-Q101; IEC-60134
FDC658P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			4 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	4 A	DUAL	R-PDSO-G6	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
SI2336DS-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			5.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.042 ohm	5.2 A	DUAL	R-PDSO-G3	1				TO-236	e3	30	260
DMG6602SVTQ-7	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2				6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.06 ohm	2.7 A	DUAL	R-PDSO-G6	1			HIGH RELIABILITY		e3		260	80 pF	AEC-Q101
BSS138BKW	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				PURE TIN	1.6 ohm	.32 A	DUAL	R-PDSO-G3	1			LOGIC LEVEL COMPATIBLE
2N7002-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.115 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	7.5 ohm	.115 A	DUAL	R-PDSO-G3	1				TO-236	e3	30	260	5 pF
IRLML2803PBF	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.54 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.2 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.25 ohm	1.2 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
SI1016CX-T1-GE3	Vishay Intertechnology	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.22 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2			.6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.396 ohm	.6 A	DUAL	R-PDSO-F6	1					e3	30	260
2N7002A-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.115 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	6 ohm	.115 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
FDC6333C_NL	Fairchild Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.96 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			2.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.095 ohm	2.5 A	DUAL	R-PDSO-G6	1		Not Qualified			e3

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.