Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
JANTX2N2907AUB	Microchip Technology	PNP	SINGLE	YES		.4 W	.6 A	UNSPECIFIED	SWITCHING		NO LEAD	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	200 Cel		SILICON	60 V	45 ns		300 ns	TIN LEAD	DUAL	R-XDSO-N3			Qualified			e0			MIL-19500/291M
BCX56-16TA	Zetex Plc	NPN	SINGLE	YES	150 MHz		1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE			100	150 Cel	15 pF	SILICON	80 V				TIN LEAD	SINGLE	R-PSSO-F3		COLLECTOR	Not Qualified			e0
BC846BLT3G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	4.5 pF	SILICON	65 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
ULN2004ADR	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING	1.6 V	GULL WING	RECTANGULAR	7	16	SMALL OUTLINE						SILICON	50 V				Matte Tin (Sn)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AC	e3	NOT SPECIFIED	260
BC857BW-7-F	Diodes Incorporated	PNP	SINGLE	YES	200 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
2N3906TFR	Onsemi	PNP	SINGLE	NO	250 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		300 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
SMBTA06UPNE6327HTSA1	Infineon Technologies	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz		.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	2	6	SMALL OUTLINE			100	150 Cel		SILICON	80 V				TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3
SBC847BPDW1T1G	Onsemi	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.65 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		200	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1					e3	30	260	AEC-Q101
MMBT3904LT1	Onsemi	NPN	SINGLE	YES	300 MHz	.225 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
BC846AW-7-F	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		110	150 Cel		SILICON	65 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMPQ6700	Onsemi	NPN AND PNP	SEPARATE, 4 ELEMENTS	YES	200 MHz		.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	4	16	SMALL OUTLINE	BIP General Purpose Small Signal		70			SILICON	40 V				MATTE TIN	DUAL	R-PDSO-G16	3		Not Qualified			e3	30	260
MMUN2233LT1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		80	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 10	TO-236	e3	40	260
BC847AW,115	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		110	150 Cel	3 pF	SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	IEC-60134
PN2907ATFR	Onsemi	PNP	SINGLE	NO	200 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		50	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC33740BU	Onsemi	NPN	SINGLE	NO	100 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		170	150 Cel		SILICON	45 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC557-B	Infineon Technologies	PNP	SINGLE	NO	250 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON						BOTTOM	O-PBCY-T3			Not Qualified
SMMBTA42LT3G	Onsemi	NPN	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
BC807-16,215	NXP Semiconductors	PNP	SINGLE	YES	80 MHz	.35 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC857BLP4-7B	Diodes Incorporated	PNP	SINGLE	YES	100 MHz	.25 W	.1 A	PLASTIC/EPOXY			NO LEAD	RECTANGULAR	1	3	CHIP CARRIER	Other Transistors		220	150 Cel		SILICON	45 V				NICKEL PALLADIUM GOLD	BOTTOM	R-PBCC-N3	1	COLLECTOR	Not Qualified			e4	30	260
BC327.25	Multicomp Pro	PNP	SINGLE	NO	100 MHz		.8 A	PLASTIC/EPOXY	AMPLIFIER		WIRE	ROUND	1	3	CYLINDRICAL			160	150 Cel		SILICON	45 V		-65 Cel			BOTTOM	O-PBCY-W3					TO-92
BC32725	Fairchild Semiconductor	PNP	SINGLE	NO	100 MHz		.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL			100	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
FMMT723TA	Diodes Incorporated	PNP	SINGLE	YES	200 MHz	.625 W	1 A	PLASTIC/EPOXY	SWITCHING	.33 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			250	150 Cel	20 pF	SILICON	100 V	50 ns	-55 Cel	760 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC856BWT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel	4.5 pF	SILICON	65 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
ULN2003ANSRG4	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	7	16	SMALL OUTLINE						SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e4	NOT SPECIFIED	260
LBC817-25LT1G	Leshan Radio	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3						e3
BC847CW,135	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel	3 pF	SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	IEC-60134
ULN2003ANSRE4	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	7	16	SMALL OUTLINE						SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e4	NOT SPECIFIED	260
PN2907ATA	Onsemi	PNP	SINGLE	NO	200 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		50	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBTA42LT3G	Onsemi	NPN	SINGLE	YES	50 MHz	.225 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC807-25W,115	NXP Semiconductors	PNP	SINGLE	YES	80 MHz	.2 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel	10 pF	SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
ZTX653STZ	Diodes Incorporated	NPN	SINGLE	NO	140 MHz		2 A	PLASTIC/EPOXY	SWITCHING		WIRE	RECTANGULAR	1	3	IN-LINE			25			SILICON	100 V				MATTE TIN	SINGLE	R-PSIP-W3			Not Qualified			e3	30	260	CECC
BC857BW,115	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel	5 pF	SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MPSA92	Texas Instruments	PNP	SINGLE	NO	50 MHz	.625 W	.5 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		25	150 Cel		SILICON	300 V					BOTTOM	O-PBCY-T3			Not Qualified		TO-226AA		NOT SPECIFIED	NOT SPECIFIED
BC817.16	Central Semiconductor	NPN	SINGLE	YES	200 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	45 V				TIN LEAD	DUAL	R-PDSO-G3			Not Qualified	HIGH CURRENT		e0
BC81716	Diodes Incorporated	NPN	SINGLE	YES	200 MHz		.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			100			SILICON	45 V				TIN LEAD	DUAL	R-PDSO-G3			Not Qualified			e0
MMBT4401	Microchip Technology	NPN	SINGLE	YES	250 MHz	.225 W	.01 A	PLASTIC/EPOXY	AMPLIFIER	.4 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	.35 W	80	150 Cel		SILICON	40 V	35 ns		255 ns	TIN LEAD	DUAL	R-PDSO-G3			Not Qualified			e0
PN2222ATFR	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V	35 ns	-55 Cel	285 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
LBC847BLT1G	Leshan Radio	NPN	SINGLE	YES	100 MHz	.225 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1					e3
PDTC114EU,115	NXP Semiconductors	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		30	150 Cel		SILICON	50 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 1		e3	30	260
PDTC114ET,215	NXP Semiconductors	NPN	SINGLE WITH BUILT-IN RESISTOR	YES	100 MHz	.25 W	.1 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		30	150 Cel	3.5 pF	SILICON	50 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 1	TO-236AB	e3	30	260
BC807-25WT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.46 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SMMBT3906LT3G	Onsemi	PNP	SINGLE	YES	250 MHz	.3 W	.2 A	PLASTIC/EPOXY		.4 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel	4.5 pF	SILICON	40 V	70 ns	-65 Cel	300 ns	MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
BC817DPN,115	NXP Semiconductors	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.37 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		40	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
BC847CT,115	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	IEC-60134
BC857,215	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		125	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC807-16W,115	NXP Semiconductors	PNP	SINGLE	YES	80 MHz	.2 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel	10 pF	SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC856B-TP	Micro Commercial Components	PNP	SINGLE	YES	200 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	65 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	10	260
PN2907ATF	Onsemi	PNP	SINGLE	NO	200 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		50	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3