Diodes Incorporated - BC81716

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

BC847CE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 420. It has Vce of 45V and Ic of 0.1A, suitable for switching applications. This surface mount device comes in a small outline package with Gull Wing terminals, ideal for high-frequency operations up to 250MHz.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

ULN2003AIDR by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications in surface mount designs. The package is rectangular with gull wing terminals, ideal for small outline configurations.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM;

MMBT3904TT1G by Onsemi is a NPN BJT transistor with 3 terminals, hFE of 30, and max. power dissipation of 0.15W. Ideal for amplifier applications, it has a max. collector-emitter voltage of 40V and operates up to 150°C. With a transition frequency of 300MHz, it offers fast turn-on/off times for efficient performance in small outline packages.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

BC846BW-7-F by Diodes Inc. is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 65V and a max collector current of 0.1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 200 and fast nominal transition frequency (fT) of 300MHz.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30;

MMBT3904 by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, hFE of 30, and max. operating temp. of 150°C. Ideal for switching applications due to its small outline package style and high transition frequency of 300MHz. It features Gull Wing terminals in a plastic/epoxy body suitable for surface mount assembly.

The Onsemi SBC846BWT1G is a NPN BJT with max power dissipation of 0.15W, hFE of 200, and fT of 100MHz. Ideal for small signal applications in electronics due to its single configuration, surface mount capability, and max collector current of 0.1A.

2N3904TA by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 70ns, toff: 250ns) and high transition frequency (fT: 300MHz).

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;

NXP Semiconductors' BC817-40,235 is a NPN BJT transistor for switching applications. With VCEsat of 0.7V and hFE of 250, it can handle IC up to 0.5A. Operating at 150°C max temp, it's ideal for small outline packages in surface mount configurations.