Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BC846A,235	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.5 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		110	150 Cel		SILICON	65 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
MMPQ2222AR1	Onsemi	NPN	SEPARATE, 4 ELEMENTS	YES	350 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	4	16	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V				TIN LEAD	DUAL	R-PDSO-G16	1		Not Qualified			e0		235
SBC847CWT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.15 W	.1 A						1			Other Transistors		420	150 Cel							MATTE TIN			1					e3	30	260
SMUN5211T1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.31 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35			SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1			BUILT IN BIAS RESISTOR RATIO IS 1		e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
FMMT593TA	Diodes Incorporated	PNP	SINGLE	YES	50 MHz	.5 W	1 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		50	150 Cel	10 pF	SILICON	100 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBTA56WT1G	Onsemi	PNP	SINGLE	YES	50 MHz	.15 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
JANTX2N2905A	Microchip Technology	PNP	SINGLE	NO	200 MHz	.6 W	.6 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		50	200 Cel		SILICON	60 V	45 ns	-65 Cel	300 ns	TIN LEAD	BOTTOM	O-MBCY-W3		COLLECTOR	Qualified		TO-205AD	e0			MIL-19500/290
BC847AQAZ	Nexperia	NPN	SINGLE	YES	100 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		NO LEAD	RECTANGULAR	1	3	SMALL OUTLINE		.28 W	110			SILICON	45 V				TIN	DUAL	R-PDSO-N3	1	COLLECTOR				e3	30	260	AEC-Q101; IEC-60134
JAN2N2905A	Microchip Technology	PNP	SINGLE	NO	200 MHz	.6 W	.6 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		50	200 Cel		SILICON	60 V	45 ns	-65 Cel	300 ns	TIN LEAD	BOTTOM	O-MBCY-W3		COLLECTOR	Qualified		TO-205AD	e0			MIL-19500/290
MMSS8050-H-TP	Micro Commercial Components	NPN	SINGLE	YES	100 MHz	.3 W	1.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	25 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	10	260
ZTX653DCSM	Tt Electronics Plc	NPN	SEPARATE, 2 ELEMENTS	YES	175 MHz		2 A	CERAMIC, METAL-SEALED COFIRED			NO LEAD	RECTANGULAR	2	6	CHIP CARRIER			25			SILICON	100 V					BOTTOM	R-CBCC-N6		COLLECTOR	Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
ULN2004ADRE4	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING	1.6 V	GULL WING	RECTANGULAR	7	16	SMALL OUTLINE						SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AC	e4	NOT SPECIFIED	260
BCX55-16,115	NXP Semiconductors	NPN	SINGLE	YES	130 MHz	1 W	1 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	60 V				TIN	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified		TO-243AA	e3	30	260
MMBT5401LT3G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	150 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
MMUN2111LT1G	Onsemi	PNP	SINGLE WITH BUILT-IN RESISTOR	YES		.4 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO 1	TO-236AB	e3	40	260
PMBT2222AM	Nexperia																									TIN			1					e3	30	260
SS8050DBU	Onsemi	NPN	SINGLE	NO	190 MHz	1 W	1.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		160	150 Cel		SILICON	25 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBT5551-TP	Micro Commercial Components	NPN	SINGLE	YES	100 MHz	.3 W	.6 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	160 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	10	260
2N4401TA	Onsemi	NPN	SINGLE	NO	250 MHz	.35 W	.6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		255 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC557BBK	Diotec Semiconductor Ag	PNP	SINGLE	NO	150 MHz		.1 A	PLASTIC/EPOXY			WIRE	ROUND	1	3	CYLINDRICAL			200	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	BOTTOM	O-PBCY-W3			Not Qualified		TO-92	e3	10	260
MMBT2907ALT1XT	Infineon Technologies	PNP	SINGLE	YES	200 MHz		.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			50			SILICON	60 V	50 ns		110 ns		DUAL	R-PDSO-G3									AEC-Q101
MMBTA06	Texas Instruments	NPN	SINGLE	YES	50 MHz			PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			50			SILICON						DUAL	R-PDSO-G3					TO-236
PMBT2222AQA	Nexperia																									TIN			1					e3	30	260
SBC847BWT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
DTC043ZEBTL	ROHM	NPN	SINGLE WITH BUILT-IN RESISTOR	YES	250 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE			80			SILICON	50 V				TIN	DUAL	R-PDSO-F3	1			BUILT IN BIAS RESISTANCE RATIO IS 10		e3	10	260
MMBT5551M3T5G	Onsemi	NPN	SINGLE	YES			.06 A	PLASTIC/EPOXY			FLAT	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel		SILICON	160 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-F3	1					e3	30	260
BC546BTF	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	65 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92	e3
BC847BPN,165	NXP Semiconductors	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.4 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
BC857	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	.25 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		125	150 Cel		SILICON	45 V				Tin (Sn)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
2N5551TA	Onsemi	NPN	SINGLE	NO	100 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	160 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
2N5551T&A	Continental Device India	NPN	SINGLE	NO	100 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	160 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC847BW,135	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	3 pF	SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	IEC-60134
BC850C,215	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE	TO-236AB	e3	30	260
2N2219AE3	Microchip Technology	NPN	SINGLE	NO			.8 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL			30			SILICON	50 V	35 ns		300 ns		BOTTOM	O-MBCY-W3		COLLECTOR			TO-205AD
BCV47E6327HTSA1	Infineon Technologies	NPN	DARLINGTON	YES	170 MHz	.36 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		2000	150 Cel		SILICON	60 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
BC848C-7-F	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	30 V		-65 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260	AEC-Q101
BCX53-16,135	NXP Semiconductors	PNP	SINGLE	YES	145 MHz	1 W	1 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				TIN	SINGLE	R-PSSO-F3	1	COLLECTOR			TO-243AA	e3	30	260	AEC-Q101; IEC-60134
BC557BZL1G	Onsemi	PNP	SINGLE	NO	320 MHz	.625 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		180	150 Cel		SILICON	45 V				Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e1	40	260
BCM857DS,115	NXP Semiconductors	PNP	SEPARATE, 2 ELEMENTS	YES	175 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
BCX56-16TX	NXP Semiconductors
2N1308	Texas Instruments	NPN	SINGLE	NO	15 MHz	.15 W	.3 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		80	85 Cel		GERMANIUM						BOTTOM	O-MBCY-W3			Not Qualified		TO-5		NOT SPECIFIED	NOT SPECIFIED
NSS1C201LT1G	Onsemi	NPN	SINGLE	YES	110 MHz	.71 W	2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	100 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	NOT SPECIFIED	NOT SPECIFIED
PDTC114YT,215	NXP Semiconductors	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.25 W	.1 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal	.25 W	100	150 Cel	3.5 pF	SILICON	50 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 4.7	TO-236AB	e3	30	260
BC847BPN-QX	Nexperia	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.4 W	.1 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE			200	150 Cel	2.2 pF	SILICON	45 V		-65 Cel			DUAL	R-PDSO-G6									AEC-Q101; IEC-60134
BC856A,215	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		125	150 Cel		SILICON	65 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
SMMUN2111LT1G	Onsemi	PNP	SINGLE WITH BUILT-IN RESISTOR	YES		.4 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35			SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1			BUILT IN BIAS RESISTANCE RATIO IS 1	TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC857CDW1T1G	Onsemi	PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
IMX8T108	ROHM	NPN	SEPARATE, 2 ELEMENTS	YES	140 MHz	.3 W	.05 A	PLASTIC/EPOXY	AMPLIFIER	.5 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		180	150 Cel		SILICON	120 V				TIN SILVER COPPER	DUAL	R-PDSO-G6	1		Not Qualified			e1	10	260