RF Small Signal Bipolar Junction Transistors (BJT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BFT93,215	NXP Semiconductors	PNP	SINGLE	YES	5000 MHz	.3 W	.035 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors	.3 W	20	150 Cel		SILICON	12 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE		e3	30	260	CECC
BFT93W,115	NXP Semiconductors	PNP	SINGLE	YES	4000 MHz	.3 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE	Other Transistors	.3 W	20	150 Cel		SILICON	12 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
BFY740B01ESB4SA1	Infineon Technologies																																		NOT SPECIFIED	NOT SPECIFIED
BFY90PBFREE	Central Semiconductor	NPN	SINGLE	NO	1400 MHz	.3 W	.025 A	METAL	AMPLIFIER		21 dB	WIRE	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	CYLINDRICAL		.2 W	20	200 Cel	1.5 pF	SILICON	15 V	-65 Cel	MATTE TIN OVER NICKEL	BOTTOM	O-MBCY-W4					TO-72	e3
HFA3101BZ96	Renesas Electronics	NPN	COMPLEX	YES	10000 MHz		.03 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	6	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE				150 Cel		SILICON	8 V		MATTE TIN	DUAL	R-PDSO-G8	1					e3	30	260
MMBTH10-7-F	Diodes Incorporated	NPN	SINGLE	YES	650 MHz	.3 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		60	150 Cel	.7 pF	SILICON	25 V		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
MMBTH10LT1	Onsemi	NPN	SINGLE	YES	650 MHz	.225 W	.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		60	150 Cel	.7 pF	SILICON	25 V		Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
MMBTH10Q-7-F	Diodes Incorporated																									MATTE TIN								e3		260
PBR951,215	NXP Semiconductors	NPN	SINGLE	YES	8000 MHz	.365 W	.1 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		50	175 Cel		SILICON	10 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE, HIGH RELIABILITY		e3	30	260
UMX5NTR	ROHM	NPN	SEPARATE, 2 ELEMENTS	YES	3200 MHz	.15 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	2		6	SMALL OUTLINE	Other Transistors		27	150 Cel	1.55 pF	SILICON	11 V			DUAL	R-PDSO-G6	1		Not Qualified				10	260
2SC5090-R	Toshiba	NPN	SINGLE	YES	10000 MHz		.04 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE				125 Cel	.95 pF	SILICON	10 V		TIN LEAD	DUAL	R-PDSO-G3			Not Qualified	LOW NOISE		e0
2SC5095-R(TE85L,F)	Toshiba	NPN	SINGLE	YES	10000 MHz	.1 W	.015 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		50	125 Cel	.85 pF	SILICON	10 V			DUAL	R-PDSO-G3			Not Qualified	LOW NOISE
2SC5095O	Toshiba	NPN	SINGLE	YES	10000 MHz	.1 W	.015 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		80	125 Cel	.85 pF	SILICON	10 V		TIN LEAD	DUAL	R-PDSO-G3			Not Qualified	LOW NOISE		e0
2SC5096-O	Toshiba	NPN	SINGLE	YES	10000 MHz	.1 W	.015 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		80	125 Cel	.85 pF	SILICON	10 V		TIN LEAD	DUAL	R-PDSO-G3			Not Qualified	LOW NOISE		e0
2SC5098-O	Toshiba	NPN	SINGLE	YES	10000 MHz	.1 W	.015 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	SMALL OUTLINE	Other Transistors		80	125 Cel	.75 pF	SILICON	10 V		TIN LEAD	DUAL	R-PDSO-G4			Not Qualified	LOW NOISE		e0
2SC5098-R	Toshiba	NPN	SINGLE	YES	10000 MHz	.1 W	.015 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	SMALL OUTLINE	Other Transistors		50	125 Cel	.75 pF	SILICON	10 V		TIN LEAD	DUAL	R-PDSO-G4			Not Qualified	LOW NOISE		e0
AT-42035G	Broadcom	NPN	SINGLE	YES	8000 MHz	.6 W	.08 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	UNSPECIFIED	1	C BAND	4	MICROWAVE	Other Transistors		30	150 Cel	.28 pF	SILICON	12 V		MATTE TIN	UNSPECIFIED	X-CXMW-F4	1		Not Qualified	LOW NOISE		e3		260
BFS20,215	NXP Semiconductors	NPN	SINGLE	YES	450 MHz	.25 W	.025 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	20 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BFU730LXZ	NXP Semiconductors	NPN		YES		.16 W	.03 A							1				BIP RF Small Signals		205			SILICON			TIN			1					e3	30	260
CA3086	Renesas Electronics	NPN	COMPLEX	NO	550 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	6	VERY HIGH FREQUENCY BAND	14	IN-LINE				125 Cel		SILICON	15 V	-55 Cel	TIN LEAD	DUAL	R-PDIP-T14	1		Not Qualified		MS-001AA	e0	40	260
CA3086M	Intersil	NPN	COMPLEX	YES	550 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	5	VERY HIGH FREQUENCY BAND	14	SMALL OUTLINE						SILICON	15 V		TIN LEAD	DUAL	R-PDSO-G14			Not Qualified		MS-012AB	e0
CA3086M96	Renesas Electronics	NPN	COMPLEX	YES	550 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	6	VERY HIGH FREQUENCY BAND	14	SMALL OUTLINE						SILICON	15 V		TIN LEAD	DUAL	R-PDSO-G14	1		Not Qualified		MS-012AB	e0
HFA3135IHZ96	Renesas Electronics	PNP	SEPARATE, 2 ELEMENTS	YES	7000 MHz		.026 A	PLASTIC/EPOXY	AMPLIFIER	.25 V		GULL WING	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	6	SMALL OUTLINE			15	85 Cel	.4 pF	SILICON	4 V	-40 Cel	MATTE TIN	DUAL	R-PDSO-G6	2			LOW NOISE		e3	30	260
NE85619-T1-A	Renesas Electronics	NPN	SINGLE	YES	4500 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		50	150 Cel	1.5 pF	SILICON	12 V			DUAL	R-PDSO-G3			Not Qualified	LOW NOISE, HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
BF771E6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	8000 MHz		.08 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1		3	SMALL OUTLINE				150 Cel	1 pF	SILICON	12 V			DUAL	R-PDSO-G3	1		Not Qualified					260
BF776H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	46000 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	SMALL OUTLINE				150 Cel	.2 pF	SILICON	4 V			DUAL	R-PDSO-G4	1	EMITTER		LOW NOISE				260
BFR360FH6765XTSA1	Infineon Technologies	NPN	SINGLE	YES	14000 MHz		.035 A	PLASTIC/EPOXY	AMPLIFIER			FLAT	RECTANGULAR	1	S BAND	3	SMALL OUTLINE					.5 pF	SILICON	6 V			DUAL	R-PDSO-F3				LOW NOISE			NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
LPT16ED	Skyworks Solutions	N-CHANNEL	SINGLE	YES		.25 W	.08 A	UNSPECIFIED	AMPLIFIER			NO LEAD	RECTANGULAR	1	KU BAND	4	UNCASED CHIP			50	150 Cel		SILICON GERMANIUM	4 V			UPPER	R-XUUC-N4
MCH6001-TL-E	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	16 MHz	.6 W	.15 A	PLASTIC/EPOXY				FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	6	SMALL OUTLINE			60	150 Cel		SILICON	8 V		TIN BISMUTH	DUAL	R-PDSO-F6	1					e6	30	260
2SC4083T106	ROHM	NPN	SINGLE	YES	3200 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE				150 Cel	1.5 pF	SILICON	11 V		TIN SILVER COPPER	DUAL	R-PDSO-G3			Not Qualified			e1
BFG21W,115	NXP Semiconductors	NPN	SINGLE	YES	18000 MHz	.67 W	.5 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	SMALL OUTLINE	Other Transistors			150 Cel	3 pF	SILICON	4.5 V		TIN	DUAL	R-PDSO-G4	1	EMITTER	Not Qualified			e3	30	260
CA3083M96	Renesas Electronics	NPN	SEPARATE, 5 ELEMENTS	YES	450 MHz		.1 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR	5	VERY HIGH FREQUENCY BAND	16	SMALL OUTLINE						SILICON	15 V		TIN LEAD	DUAL	R-PDSO-G16	1		Not Qualified		MS-012AC	e0		240
2SC3838KT146P	ROHM	NPN	SINGLE	YES	3200 MHz	.2 W	.05 A	PLASTIC/EPOXY	AMPLIFIER	.5 V		GULL WING	RECTANGULAR	1	S BAND	3	SMALL OUTLINE	Other Transistors		82	150 Cel	1.5 pF	SILICON	11 V		Tin/Silver/Copper (Sn/Ag/Cu)	DUAL	R-PDSO-G3	1		Not Qualified			e1	10	260
BFU530WX	NXP Semiconductors	NPN	SINGLE	YES	11000 MHz		.04 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE				150 Cel		SILICON	12 V	-40 Cel	TIN	DUAL	R-PDSO-G3	1			LOW NOISE		e3		260	AEC-Q101; IEC-60134
CA3083M	Intersil	NPN	SEPARATE, 5 ELEMENTS	YES	450 MHz		.1 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR	5	VERY HIGH FREQUENCY BAND	16	SMALL OUTLINE						SILICON	15 V		TIN LEAD	DUAL	R-PDSO-G16	1		Not Qualified		MS-012AC	e0
JAN2N2857	Defense Logistics Agency	NPN	SINGLE	NO			.04 A	METAL				WIRE	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	CYLINDRICAL					1 pF	SILICON	15 V			BOTTOM	O-MBCY-W4			Qualified		TO-72				MIL-19500/343F
LM3146N	National Semiconductor	NPN	COMPLEX	NO	500 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	5	VERY HIGH FREQUENCY BAND	14	IN-LINE			30	85 Cel		SILICON	30 V		TIN LEAD	DUAL	R-PDIP-T14			Not Qualified			e0
MT3S111(TE85LF)	Toshiba																																		NOT SPECIFIED	NOT SPECIFIED
2SC2995	Toshiba	NPN	SINGLE	NO	350 MHz	.2 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	IN-LINE	Other Transistors		40	125 Cel	1.3 pF	SILICON	30 V		TIN LEAD	SINGLE	R-PSIP-T3			Not Qualified			e0
2SC3837KT146P	ROHM	NPN	SINGLE	YES	1500 MHz	.2 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		82	150 Cel	1.5 pF	SILICON	20 V		Tin/Silver/Copper (Sn/Ag/Cu)	DUAL	R-PDSO-G3	1		Not Qualified			e1	10	260
2SC3838KT146N	ROHM	NPN	SINGLE	YES	3200 MHz	.2 W	.05 A	PLASTIC/EPOXY	AMPLIFIER	.5 V		GULL WING	RECTANGULAR	1	S BAND	3	SMALL OUTLINE	Other Transistors		56	150 Cel	1.5 pF	SILICON	11 V		Tin/Silver/Copper (Sn/Ag/Cu)	DUAL	R-PDSO-G3	1		Not Qualified			e1	10	260
2SC4774T106S	ROHM	NPN	SINGLE	YES	800 MHz	.15 W	.05 A	PLASTIC/EPOXY	SWITCHING	.3 V		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		270	150 Cel	1.7 pF	SILICON	6 V		Tin/Silver/Copper (Sn/Ag/Cu)	DUAL	R-PDSO-G3	1		Not Qualified			e1	10	260
2SC5066-O,LF	Toshiba	NPN	SINGLE	YES	7000 MHz	.1 W	.03 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE		.1 W	80	125 Cel	.9 pF	SILICON	12 V			DUAL	R-PDSO-G3				LOW NOISE
2SC5662T2LP	ROHM	NPN	SINGLE	YES	3200 MHz	.15 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			FLAT	RECTANGULAR	1	S BAND	3	SMALL OUTLINE	Other Transistors		56	150 Cel	1.5 pF	SILICON	11 V		TIN COPPER	DUAL	R-PDSO-F3	1		Not Qualified			e2	10	260
BFR96	NXP Semiconductors	NPN	SINGLE	YES	5000 MHz		.075 A	PLASTIC/EPOXY	AMPLIFIER			FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	3	DISK BUTTON					1.4 pF	SILICON	15 V			RADIAL	O-PRDB-F3			Not Qualified	LOW NOISE					CECC
CA3146E	Intersil	NPN	COMPLEX	NO	500 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	5	VERY HIGH FREQUENCY BAND	14	IN-LINE						SILICON	30 V		TIN LEAD	DUAL	R-PDIP-T14			Not Qualified	LOW NOISE	MS-001AA	e0
HFA3127B	Intersil	NPN	SEPARATE, 5 ELEMENTS	YES	8000 MHz		.037 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	SMALL OUTLINE						SILICON	8 V		TIN LEAD	DUAL	R-PDSO-G16	1		Not Qualified	LOW NOISE	MS-012AC	e0
KSP10	Onsemi	NPN	SINGLE	NO	650 MHz	1 W		PLASTIC/EPOXY		.5 V		THROUGH-HOLE	ROUND	1	ULTRA HIGH FREQUENCY BAND	3	CYLINDRICAL		.35 W	60	150 Cel	.7 pF	SILICON	25 V			BOTTOM	O-PBCY-T3					TO-92

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few milliwatts to a few watts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.