RF Small Signal Bipolar Junction Transistors (BJT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BFU550R	NXP Semiconductors	NPN	SINGLE	YES	11000 MHz	.45 W	.05 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE			60	150 Cel	.72 pF	SILICON	16 V	-40 Cel	TIN	DUAL	R-PDSO-G4	1	COLLECTOR		LOW NOISE		e3	30	260	AEC-Q101; IEC-60134
CPH6003A-TL-E	Onsemi	NPN	SINGLE	YES		.8 W	.15 A						1				Other Transistors		100	150 Cel					TIN BISMUTH			1					e6	30	260
JANS2N3866AUB	Defense Logistics Agency	NPN	SINGLE	YES			.4 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		NO LEAD	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					3.5 pF	SILICON	30 V			DUAL	R-CDSO-N3			Qualified						MIL-19500/398
KST10MTF	Onsemi	NPN	SINGLE	YES	650 MHz	.35 W		PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		60		.7 pF	SILICON	25 V		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBTH10	Onsemi	NPN	SINGLE	YES	650 MHz	.225 W	.05 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		60	150 Cel	.7 pF	SILICON	25 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE		e3	30	260
MMBTH10-4LT1G	Onsemi	NPN	SINGLE	YES	800 MHz	.3 W	.025 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		120	150 Cel	.7 pF	SILICON	25 V		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
MMBTH24-7-F	Diodes Incorporated	NPN	SINGLE	YES	400 MHz	.3 W	.05 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		30	150 Cel	.7 pF	SILICON	40 V		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MPSH10RLRAG	Onsemi	NPN	SINGLE	NO	650 MHz	.35 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	ULTRA HIGH FREQUENCY BAND	3	CYLINDRICAL	Other Transistors		60	150 Cel	.7 pF	SILICON	25 V		TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
SS9018FBU	Onsemi	NPN	SINGLE	NO	1100 MHz	.4 W	.05 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	VERY HIGH FREQUENCY BAND	3	CYLINDRICAL	Other Transistors		54	150 Cel	1.7 pF	SILICON	15 V		Tin (Sn)	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
SS9018GBU	Onsemi	NPN	SINGLE	NO	1100 MHz	.4 W	.05 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	VERY HIGH FREQUENCY BAND	3	CYLINDRICAL	Other Transistors		72	150 Cel	1.7 pF	SILICON	15 V		TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
SS9018HBU	Onsemi	NPN	SINGLE	NO	1100 MHz	.4 W	.05 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	VERY HIGH FREQUENCY BAND	3	CYLINDRICAL	Other Transistors		97	150 Cel	1.7 pF	SILICON	15 V		Tin (Sn)	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
2N2857CSM	Tt Electronics Plc	NPN	SINGLE	YES	1900 MHz		.04 A	CERAMIC, METAL-SEALED COFIRED			NO LEAD	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE				200 Cel	1 pF	SILICON	15 V			DUAL	R-CDSO-N3			Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
2SC4915-O,LF	Toshiba	NPN	SINGLE	YES	550 MHz	.1 W	.02 A	PLASTIC/EPOXY	AMPLIFIER	17 dB	GULL WING	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	SMALL OUTLINE		.1 W	70	125 Cel	.55 pF	SILICON	30 V			DUAL	R-PDSO-G3
2SC4915-O,LF(B	Toshiba	NPN	SINGLE	YES	550 MHz	.1 W	.02 A	PLASTIC/EPOXY	AMPLIFIER	17 dB	GULL WING	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	SMALL OUTLINE		.1 W	70	125 Cel	.55 pF	SILICON	30 V			DUAL	R-PDSO-G3
2SC5107-OTE85L	Toshiba	NPN	SINGLE	YES	6000 MHz	.1 W	.03 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		80	125 Cel	.9 pF	SILICON	10 V		TIN LEAD	DUAL	R-PDSO-G3			Not Qualified			e0
2SC5107O	Toshiba	NPN	SINGLE	YES	6000 MHz	.1 W	.03 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		80	125 Cel	.9 pF	SILICON	10 V		TIN LEAD	DUAL	R-PDSO-G3			Not Qualified			e0
BFP620FE7764	Infineon Technologies	NPN	SINGLE	YES	65000 MHz		.08 A	PLASTIC/EPOXY			FLAT	RECTANGULAR	1	C BAND	4	SMALL OUTLINE					.2 pF	SILICON GERMANIUM	2.3 V		MATTE TIN	DUAL	R-PDSO-F4	1		Not Qualified	LOW NOISE, HIGH RELIABILITY		e3		260
BFP740E6327	Infineon Technologies	NPN	SINGLE	YES	44000 MHz	.16 W	.045 A	PLASTIC/EPOXY	AMPLIFIER	19.5 dB	GULL WING	RECTANGULAR	1	C BAND	4	SMALL OUTLINE			160	150 Cel	.08 pF	SILICON GERMANIUM CARBON	4 V	-55 Cel		DUAL	R-PDSO-G4								260
BFR193E6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	8000 MHz	.58 W	.08 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		70	150 Cel	1 pF	SILICON	12 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
BFR193FH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	8000 MHz		.08 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	3	SMALL OUTLINE					1 pF	SILICON	12 V		TIN	DUAL	R-PDSO-F3	1			LOW NOISE		e3			AEC-Q101
BFR193L3E6327XTMA1	Infineon Technologies	NPN	SINGLE	YES	8000 MHz	.58 W	.08 A	UNSPECIFIED	AMPLIFIER		NO LEAD	RECTANGULAR	1	L BAND	3	CHIP CARRIER			70	150 Cel	.9 pF	SILICON	12 V		GOLD	BOTTOM	R-XBCC-N3	1	COLLECTOR		LOW NOISE		e4			AEC-Q101
BFR520TT/R	NXP Semiconductors	NPN	SINGLE	YES	9000 MHz		.07 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE						SILICON			TIN	DUAL	R-PDSO-G3			Not Qualified	HIGH RELIABILITY, LOW NOISE		e3	40	260
BFU520VL	NXP Semiconductors	NPN	SINGLE	YES	10500 MHz	.45 W	.05 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE			60	150 Cel	.52 pF	SILICON	16 V	-40 Cel	TIN	DUAL	R-PDSO-G4	1	COLLECTOR				e3	30	260	AEC-Q101; IEC-60134
BFU520XR	NXP Semiconductors	NPN	SINGLE	YES	10500 MHz	.45 W	.05 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE			60	150 Cel	.28 pF	SILICON	16 V	-40 Cel		DUAL	R-PDSO-G4		COLLECTOR							AEC-Q101; IEC-60134
BFU520XR,235	NXP Semiconductors	NPN	SINGLE	YES	10500 MHz	.45 W	.05 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE			60	150 Cel	.28 pF	SILICON	16 V	-40 Cel		DUAL	R-PDSO-G4		COLLECTOR							AEC-Q101; IEC-60134
BFY740B01PB4SA1	Infineon Technologies																																	NOT SPECIFIED	NOT SPECIFIED
EMX5T2R	ROHM	NPN	SEPARATE, 2 ELEMENTS	YES	3200 MHz	.15 W	.05 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2		6	SMALL OUTLINE	Other Transistors		27	150 Cel	1.55 pF	SILICON	11 V		TIN COPPER	DUAL	R-PDSO-F6	1		Not Qualified			e2	10	260
IMX5T108	ROHM	NPN	SEPARATE, 2 ELEMENTS	YES	1400 MHz	.3 W	.05 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2		6	SMALL OUTLINE	Other Transistors		27	150 Cel		SILICON			TIN SILVER COPPER	DUAL	R-PDSO-G6	1		Not Qualified			e1	10	260
JANTX2N918	Microchip Technology	NPN	SINGLE	NO			.05 A	METAL			WIRE	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	CYLINDRICAL				200 Cel	3 pF	SILICON	15 V	-65 Cel	TIN LEAD	BOTTOM	O-MBCY-W4			Qualified		TO-72	e0			MIL-19500/301H
MPSH10G	Onsemi	NPN	SINGLE	NO	650 MHz	.35 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	ULTRA HIGH FREQUENCY BAND	3	CYLINDRICAL	Other Transistors		60	150 Cel	.7 pF	SILICON	25 V		TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
MPSH10RLRA	Onsemi	NPN	SINGLE	NO	650 MHz	.35 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	ULTRA HIGH FREQUENCY BAND	3	CYLINDRICAL	Other Transistors		60	150 Cel	.7 pF	SILICON	25 V		TIN LEAD	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e0		235
MPSH10RLRPG	Onsemi	NPN	SINGLE	NO	650 MHz	.35 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	ULTRA HIGH FREQUENCY BAND	3	CYLINDRICAL	Other Transistors		60	150 Cel	.7 pF	SILICON	25 V		TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
NE85634-T1-A	Renesas Electronics	NPN	SINGLE	YES	6500 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	3	SMALL OUTLINE				150 Cel	1 pF	SILICON	12 V			SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified	LOW NOISE, HIGH RELIABILITY
NESG260234-T1	Renesas Electronics	NPN	SINGLE	YES			.5 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE				150 Cel		SILICON GERMANIUM	9.2 V		TIN LEAD	SINGLE	R-PSSO-F3		EMITTER	Not Qualified			e0
NTE311	Nte Electronics	NPN	SINGLE	NO	800 MHz	5 W	.4 A	METAL	AMPLIFIER		WIRE	ROUND	1	ULTRA HIGH FREQUENCY BAND	3	CYLINDRICAL	Other Transistors	5 W	25		3 pF	SILICON	30 V			BOTTOM	O-MBCY-W3		COLLECTOR	Not Qualified		TO-39		NOT SPECIFIED	NOT SPECIFIED
SMMBTH10-4LT3G	Onsemi	NPN	SINGLE	YES	800 MHz	.3 W							1				Other Transistors		120	150 Cel					MATTE TIN			1					e3	30	260
BFG541,115	NXP Semiconductors	NPN	SINGLE	YES	9000 MHz	.65 W	.12 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE	Other Transistors	.65 W	60	150 Cel		SILICON			TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified	HIGH RELIABILITY		e3	30	260
BFG541T/R	NXP Semiconductors	NPN	SINGLE	YES	9000 MHz	.65 W	.12 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE	Other Transistors	.65 W	60	150 Cel		SILICON			TIN	DUAL	R-PDSO-G4		COLLECTOR	Not Qualified	HIGH RELIABILITY, LOW NOISE		e3	40	260
BFP193WH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	8000 MHz		.08 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE					1 pF	SILICON	12 V		TIN	DUAL	R-PDSO-G3	1			LOW NOISE		e3			AEC-Q101
BFP196E6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	7500 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE				150 Cel	1.4 pF	SILICON	12 V		TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3
BFP405H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	25000 MHz		.025 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE					.1 pF	SILICON	4.5 V		TIN	DUAL	R-PDSO-G4	1					e3			AEC-Q101
BFP420H6327	Infineon Technologies	NPN	SINGLE	YES	25000 MHz		.035 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	X BAND	4	SMALL OUTLINE				150 Cel	.3 pF	SILICON	4.5 V		MATTE TIN	DUAL	R-PDSO-G4				HIGH RELIABILITY, LOW NOISE		e3			AEC-Q101
BFP420H6433XTMA1	Infineon Technologies	NPN	SINGLE	YES	25000 MHz		.035 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	X BAND	4	SMALL OUTLINE					.3 pF	SILICON	4.5 V			DUAL	R-PDSO-G4				HIGH RELIABILITY, LOW NOISE					AEC-Q101
BFP420H6740XTSA1	Infineon Technologies	NPN	SINGLE	YES	25000 MHz		.035 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	X BAND	4	SMALL OUTLINE					.3 pF	SILICON	4.5 V			DUAL	R-PDSO-G4				HIGH RELIABILITY, LOW NOISE			NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BFP420H6801XTSA1	Infineon Technologies	NPN	SINGLE	YES	25000 MHz		.035 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	X BAND	4	SMALL OUTLINE					.3 pF	SILICON	4.5 V			DUAL	R-PDSO-G4				HIGH RELIABILITY, LOW NOISE			NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BFP740E6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	44000 MHz	.16 W	.045 A	PLASTIC/EPOXY	AMPLIFIER	19.5 dB	GULL WING	RECTANGULAR	1	C BAND	4	SMALL OUTLINE			160	150 Cel	.08 pF	SILICON GERMANIUM CARBON	4 V	-55 Cel		DUAL	R-PDSO-G4
BFR183E6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	8000 MHz		.065 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE				150 Cel	.6 pF	SILICON	12 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
BFT25A,215	NXP Semiconductors	NPN	SINGLE	YES	5000 MHz	.032 W	.0065 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE	Other Transistors	.032 W	50	175 Cel	.45 pF	SILICON	5 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260	CECC

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few milliwatts to a few watts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.